A method for manufacturing a fin-integrated semiconductor module includes: clamping a fin-integrated heat-dissipation base using a level different jig while making the heat-dissipation base vary in height; and soldering a semiconductor assembly onto the heat-dissipation base. A semiconductor module includes a fin-integrated heat-dissipation base and a semiconductor assembly provided on the heat-dissipation base. A bending width of the heat-dissipation base is 200 μm or less.

A metal base plate is rectangular in plan view, has a joining region set on a front surface, and has a center line, which is parallel to a pair of short sides that face each other, set in a middle interposed between the pair of short sides. A ceramic circuit board includes a ceramic board that is rectangular in plan view, a circuit pattern that is formed on a front surface of the ceramic board and has a semiconductor chip joined thereto, and a metal plate that is formed on a rear surface of the ceramic board and is joined to the joining region by solder. Here, the solder contains voids and is provided with a stress relieving region at one edge portion that is away from the center line. A density of voids included in the stress relieving region is higher than other regions of the solder.

A power semiconductor module includes a substrate with a metallization layer that is structured. A semiconductor chip having a first side bonded to the metallization layer. A metal clip, which is a strip of metal, has a first planar part bonded to a second side of the semiconductor chip opposite to the first side. The metal clip also has a second planar part bonded to the metallization layer. A mold encapsulation at least partially encloses the substrate and the metal clip. The mold encapsulation has a recess approaching towards the first planar part of the metal clip. The semiconductor chip is completely enclosed by the mold encapsulation, the substrate and the metal clip and the first planar part of the metal clip is at least partially exposed by the recess. A sensor is accommodated in the recess.

A power switch module includes a semiconductor die and a conductive busbar. The semiconductor die is electrically conductively mounted to the busbar. The module also includes a dielectric coolant fluid and the busbar and the semiconductor die mounted thereto are immersed in the dielectric coolant fluid.

A semiconductor device includes a substrate, a conductive part, a controller module and a sealing resin. The substrate has a substrate obverse surface and a substrate reverse surface facing away from each other in a z direction. The conductive part is made of an electrically conductive material on the substrate obverse surface. The controller module is disposed on the substrate obverse surface and electrically connected to the conductive part. The sealing resin covers the controller module and at least a portion of the substrate. The conductive part includes an overlapping wiring trace having an overlapping portion overlapping with the electronic component as viewed in the z direction. The overlapping portion of the overlapping wiring trace is not electrically bonded to the controller module.

In this semiconductor device, an emitter electrode of a power semiconductor element includes a first sub-electrode provided in a region including a central portion of a front surface of a semiconductor substrate and a second sub-electrode provided in a region not including the central portion of the front surface of the semiconductor substrate. A first bonding wire connects the first sub-electrode and an emitter terminal. A second bonding wire connects the second sub-electrode and the emitter terminal. First and second voltage detectors detect voltages between the emitter terminal and the first and second sub-electrodes, respectively. It is possible to separately detect degradation of both the first bonding wire that degrades in an early period and the second bonding wire that degrades in a terminal period.

A circuit module includes a substrate with a patterned metal surface. The patterned metal surface includes a conductive terminal pad, a first conductive pad, and a second conductive pad that is non-adjacent to the conductive terminal pad. A first circuit portion is assembled on the first conductive pad and a second circuit portion is assembled on the second conductive pad. A conductive bridge electrically couples the conductive terminal pad and the second conductive pad. The conductive bridge includes an elevated span extending above and across the first conductive pad.

Articles, devices, and methods including anisotropic van der Waals thermal conductors are described.

Systems including power device embedded PCBs coupled to cooling devices and methods of forming the same are disclosed. One system includes a power device embedded PCB stack, a cooling assembly including a cold plate having one or more recesses therein, and a buffer cell disposed within each of the one or more recesses. The cooling assembly is bonded to the PCB stack with a insulation substrate disposed therebetween. The cooling assembly is arranged such that the buffer cell faces the PCB stack and absorbs stress generated at an interface of the PCB stack and the cooling assembly.

Provided is anisotropic graphite for producing an anisotropic graphite composite having excellent thermal conduction property and excellent long-term reliability as a heat dissipating member. Given an X axis, a Y axis orthogonal to the X axis, and a Z axis perpendicular to a plane defined by the X axis and the Y axis, and a crystal orientation plane of the anisotropic graphite is parallel to an X-Z plane, and a specific number of holes each having a specific size are formed in at least one surface out of surfaces of the anisotropic graphite which are parallel to an X-Y plane.