A semiconductor device manufacturing method includes a molding step including disposing a control pin between an inlet and a control wire and on a line connecting the inlet and the control wire in a plan view of the semiconductor device, injecting molding resin raw material into a cavity through the inlet, filling the cavity with the molding resin raw material, and sealing a semiconductor chip and a control element disposed on a main current lead frame and a control lead frame. In this way, the flow velocity of the molding resin raw material flowing to the control wire is reduced.

A heat dissipation sheet containing a silicone resin and a thermally conductive filler, wherein with respect to the cross-sectional shape of the thermally conductive filler, the average value of an aspect ratio of the 1st to 24th particles from the largest of biaxial average diameters, is in a range of 0.4 or more and 1.4 or less. In addition, an area ratio (Sr) of a total area S of cross-sectional shapes of the particles to a whole area of the cross-sectional view may be in a range of 20% or more and 80% or less, and the particle number ratio may be less than 1. Further, a thermal resistance ratio of a thermal resistance value when a pressure of 0.4 MPa is applied to a thermal resistance value when a pressure of 1.0 MPa is applied may be 1 or more.

Provided is anisotropic graphite for producing an anisotropic graphite composite having excellent thermal conduction property and excellent long-term reliability as a heat dissipating member. Given an X axis, a Y axis orthogonal to the X axis, and a Z axis perpendicular to a plane defined by the X axis and the Y axis, and a crystal orientation plane of the anisotropic graphite is parallel to an X-Z plane, and a specific number of holes each having a specific size are formed in at least one surface out of surfaces of the anisotropic graphite which are parallel to an X-Y plane.

Provided is: a thermally conductive silicone gel composition which has a high thermal conductivity, and is less likely to flow out and slip off/drop off from a surface on which the gel composition is placed, even when the composition that has not been cured is placed on a sloped surface or in a vertical direction, and has excellent gap-filling ability with respect to a heat dissipation part, etc., and excellent repairability if desired; a thermally conductive member comprising the thermally conductive silicone gel composition; and a heat dissipation structure using the same. The thermally conductive silicone gel composition comprises: (A) an alkenyl group-containing organopolysiloxane; (B) an organohydrogenpolysiloxane; (C) a catalyst for a hydrosilylation reaction; (D) a thermally conductive filler; (E) a silane-coupling agent; and (F) a specific organopolysiloxane having a hydrolyzable silyl group at one end thereof. The gel composition has certain viscosity properties as disclosed herein.

A chip is mounted on a surface of the substrate, and the thermally conductive cover is disposed on a side that is of the chip and that is away from the substrate. There is a filling area on a surface that is of the thermally conductive cover and that faces the substrate, and the filling area is opposite to the chip. There is an accommodation cavity whose opening faces the substrate in the filling area. A thermal interface material layer is filled between the chip and a bottom surface of the accommodation cavity. Between an opening edge of the accommodation cavity and the substrate, there is a first gap connected to the accommodation cavity. The filling material encircles a side surface of the thermal interface material layer, so that the filling material separates the side surface of the thermal interface material layer from air.

Systems and methods described herein can provide a thermal interface for an electronic device including: obtaining an enclosure and a circuit within the enclosure, wherein the circuit is disposed within the enclosure such that there is space between the circuit and an internal surface of the enclosure; and positioning a thermally conductive material in the space between the circuit and an internal surface of the enclosure such that the thermally conductive material is in physical contact with an outer surface of the circuit and the internal surface of the enclosure to provide heat transfer from the circuit to the enclosure.

A thermal pad and an electronic device comprising the thermal pad includes a first heat conducting layer and a second heat conducting layer. The first heat conducting layer is deformable under compression, and a heat conduction capability of the first heat conducting layer in a thickness direction of the first heat conducting layer is greater than a heat conduction capability of the first heat conducting layer in a plane direction of the first heat conducting layer. The second heat conducting layer is not deformable under compression, and a heat conduction capability of the second heat conducting layer in a plane direction of the second heat conducting layer is greater than or equal to a heat conduction capability of the second heat conducting layer in a thickness direction of the second heat conducting layer.

A PoP semiconductor device has a top semiconductor package disposed over a bottom semiconductor package. The top semiconductor package has a substrate and a first semiconductor die disposed over the substrate. First and second encapsulants are deposited over the first semiconductor die and substrate. A first build-up interconnect structure is formed over the substrate after depositing the second encapsulant. The top package is disposed over the bottom package. The bottom package has a second semiconductor die and modular interconnect units disposed around the second semiconductor die. A second build-up interconnect structure is formed over the second semiconductor die and modular interconnect unit. The modular interconnect units include a plurality of conductive vias and a plurality of contact pads electrically connected to the conductive vias. The I/O pattern of the build-up interconnect structure on the top semiconductor package is designed to coincide with the I/O pattern of the modular interconnect units.

A cooling system for a circuit board includes a conforming layer that conforms to the profile of the circuit board, including a base and at least one heat generating component. A cap is connected to the conforming layer and offset from the conforming layer with a gap. A working fluid is flowed through the gap and used to cool the heat generating component. This allows for a low-cost and flexible cooling system for a circuit board without a redesign of a cold plate with each change to the circuit board.

A method of forming a semiconductor package is provided. The method includes forming a metallization stack over a semiconductor die. Polymer particles are mounted over the metallization stack. Each of the polymer particles is coated with a first bonding layer. A heat spreader lid is bonded with the semiconductor die by reflowing the first bonding layer. A composite thermal interface material (TIM) structure is formed between the heat spreader lid and the semiconductor die during the bonding. The composite TIM structure includes the first bonding layer and the polymer particles embedded in the first bonding layer.