A semiconductor package includes a first semiconductor chip mounted on the package substrate, a second semiconductor mounted on the package substrate and set apart from the first semiconductor chip in a horizontal direction thereby forming a gap between the first semiconductor chip and the second semiconductor chip. The semiconductor package further includes a first thermal interface material layer formed in the gap and having a first modulus of elasticity and a second thermal interface material layer formed on each of the first semiconductor chip and the second semiconductor chip and having a second modulus of elasticity, wherein the first modulus of elasticity is less than the second modulus of elasticity.

A semiconductor package device includes a substrate, an electronic component, and a thermal conductive layer. The electronic component is disposed on the substrate and includes a first surface facing away from the substrate. The thermal conductive layer is disposed above the first surface of the electronic component. The thermal conductive layer includes a plurality of portions spaced apart from each other.

This film-shaped firing material is a film-shaped firing material containing sinterable metal particles and a binder component, in which, when the average thickness of the portion of the film-shaped firing material excluding the edge portion is deemed 100%, the average thickness of the edge portion of the film-shaped firing material is at least 5% thicker than the average thickness of the portion of the film-shaped firing material excluding the edge portion.

The present disclosure relates to a radio frequency (RF) device that includes a mold device die and a multilayer redistribution structure underneath the mold device die. The mold device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion, and a first mold compound. The FEOL portion includes an active layer, a contact layer, and isolation sections. Herein, the active layer and the isolation sections reside over the contact layer, and the active layer is surrounded by the isolation sections. The first mold compound resides over the active layer without silicon crystal, which has no germanium content, in between. The multilayer redistribution structure includes redistribution interconnections and a number of bump structures that are at bottom of the multilayer redistribution structure and electrically coupled to the mold device die via the redistribution interconnections.

A semiconductor device includes: a substrate on which wiring is formed; a first semiconductor element flip-chip bonded to the substrate; a second semiconductor element provided on the first semiconductor element; a first resin provided in at least part of a region between the first semiconductor element and the substrate; a second resin provided in at least part of a region between the second semiconductor element and the substrate; and a member having a thermal conductivity higher than a thermal conductivity of the first resin and a thermal conductivity of the second resin, provided between the first resin and the second resin, having a part overlapping with an upper surface of the first semiconductor element, and having another part overlapping with a first wiring part as part of the wiring in a top view.

Semiconductor three-dimensional integrated circuit packages and methods of forming the same are disclosed herein. A method includes bonding a semiconductor chip package to a substrate and depositing a thermal interface material on the semiconductor chip package. A thermal lid may be placed over and adhered to the semiconductor chip package by the thermal interface material. The thermal lid includes a wedge feature interfacing the thermal interface material. The thermal lid may be adhered to the semiconductor chip package by curing the thermal interface material.

Provided is a thermally conductive composition containing a liquid resin, a thermally conductive powder, and a dispersant, in which the liquid resin has a viscosity of 10 mPa.Math.s or more and 2,000 mPa.Math.s or less at 25° C., the dispersant is an acrylic silicone, and at least one of the liquid resin and the thermally conductive powder contains an alkyl group having 4 or more carbon atoms.

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

A method for producing a thermally conductive sheet S includes a step of obtaining a thermally conductive composition by mixing a reactive liquid resin, which forms a rubbery or gelatinous matrix when crosslinked, a volatile liquid having a boiling point 10° C. or more higher than a curing temperature of the reactive liquid resin, and a thermally conductive filler; a step of forming a molded body by crosslinking and curing the reactive liquid resin at a temperature 10° C. or more lower than the boiling point of the volatile liquid; and a step of evaporating the volatile liquid by heating the molded body, in which these steps are performed sequentially.

The present invention provides a thermally conductive material having excellent thermal conductivity. Furthermore, the present invention provides a device with a thermally conductive layer that has a thermally conductive layer containing the thermally conductive material and a composition for forming a thermally conductive material that is used for forming the thermally conductive material. The thermally conductive material according to an embodiment of the present invention contains a cured substance of a disk-like compound, which has one or more reactive functional groups selected from the group consisting of a hydroxyl group, a carboxylic acid group, a carboxylic acid anhydride group, an amino group, a cyanate ester group, and a thiol group, and a crosslinking compound which has a group reacting with the reactive functional groups.