An interconnect structure includes a substrate, a dielectric layer on the substrate, a metal interconnect layer in the dielectric layer and in contact with the substrate, the metal interconnect layer having an upper surface flush with an upper surface of the dielectric layer, and a graphene layer on the metal interconnect layer. The graphene layer insulates a metal from air and prevents the metal from being oxidized by oxygen in the air, thereby increasing the queue time for the CMP process and the device reliability.

Provided is a solder transfer sheet which is capable of increasing the amount of solder to be transferred without the occurrence of bridging. A solder transfer sheet 1A includes a base material 5, an adhesive layer 4 formed on the surface of the base material 5, a solder powder-containing adhesive layer 3 formed on the surface of the adhesive layer 4, and a solder powder layer 2 formed on the surface of the solder powder-containing adhesive layer 3. In the solder powder layer 2, particles of solder powder 20 are arranged in a one-layer sheet form. In the solder powder-containing adhesive layer 3, solder powder 30 and an adhesive component 31 are mixed so as to have such a thickness that two or more layers of the solder powder 30 are stacked.

An interconnect structure includes a substrate, a dielectric layer on the substrate, a metal interconnect layer in the dielectric layer and in contact with the substrate, the metal interconnect layer having an upper surface flush with an upper surface of the dielectric layer, and a graphene layer on the metal interconnect layer. The graphene layer insulates a metal from air and prevents the metal from being oxidized by oxygen in the air, thereby increasing the queue time for the CMP process and the device reliability.

The semiconductor device includes a supporting member, a conductive member, and a semiconductor element. The supporting member has a supporting surface facing in a thickness direction. The conductive member has an obverse surface facing the same side as the supporting surface faces in the thickness direction, and a reverse surface opposite to the obverse surface. The conductive member is bonded to the supporting member such that the reverse surface faces the supporting surface. The semiconductor element is bonded to the obverse surface. The semiconductor device further includes a first metal layer and a second metal layer. The first metal layer covers at least a part of the supporting surface. The second metal layer covers the reverse surface. The first metal layer and the second layer are bonded to each other by solid phase diffusion.

The semiconductor device includes a supporting member, a conductive member, and a semiconductor element. The supporting member has a supporting surface facing in a thickness direction. The conductive member has an obverse surface facing the same side as the supporting surface faces in the thickness direction, and a reverse surface opposite to the obverse surface. The conductive member is bonded to the supporting member such that the reverse surface faces the supporting surface. The semiconductor element is bonded to the obverse surface. The semiconductor device further includes a first metal layer and a second metal layer. The first metal layer covers at least a part of the supporting surface. The second metal layer covers the reverse surface. The first metal layer and the second layer are bonded to each other by solid phase diffusion.

The semiconductor device includes a supporting member, a conductive member, and a semiconductor element. The supporting member has a supporting surface facing in a thickness direction. The conductive member has an obverse surface facing the same side as the supporting surface faces in the thickness direction, and a reverse surface opposite to the obverse surface. The conductive member is bonded to the supporting member such that the reverse surface faces the supporting surface. The semiconductor element is bonded to the obverse surface. The semiconductor device further includes a first metal layer and a second metal layer. The first metal layer covers at least a part of the supporting surface. The second metal layer covers the reverse surface. The first metal layer and the second layer are bonded to each other by solid phase diffusion.

A semiconductor device includes a base plate to which a stacked substrate is bonded, the stacked substrate being mounted on a semiconductor chip. The semiconductor device further includes a heat sink mounted to the base plate, via thermal paste and a metal ring. A center hole of the metal ring is provided to face the semiconductor chip and the thermal paste fills the center hole. Further, the metal ring is formed using a material having about a same hardness as the heat sink, or a material having a lower hardness than the hardness of the heat sink.

A semiconductor arrangement is provided. The semiconductor arrangement may include an electrically conductive plate having a surface, a plurality of power semiconductor devices arranged on the surface of the electrically conductive plate, wherein a first controlled terminal of each power semiconductor device of the plurality of power semiconductor devices may be electrically coupled to the electrically conductive plate, a plurality of electrically conductive blocks, wherein each electrically conductive block may be electrically coupled with a respective second controlled terminal of each power semiconductor device of the plurality of power semiconductor devices; and encapsulation material encapsulating the plurality of power semiconductor devices, wherein at least one edge region of the surface of the electrically conductive plate may be free from the encapsulation material.

Provided is a solder transfer sheet which is capable of increasing the amount of solder to be transferred without the occurrence of bridging. A solder transfer sheet 1A includes a base material 5, an adhesive layer 4 formed on the surface of the base material 5, a solder powder-containing adhesive layer 3 formed on the surface of the adhesive layer 4, and a solder powder layer 2 formed on the surface of the solder powder-containing adhesive layer 3. In the solder powder layer 2, particles of solder powder 20 are arranged in a one-layer sheet form. In the solder powder-containing adhesive layer 3, solder powder 30 and an adhesive component 31 are mixed so as to have such a thickness that two or more layers of the solder powder 30 are stacked.

A semiconductor device includes a base plate to which a stacked substrate is bonded, the stacked substrate being mounted on a semiconductor chip. The semiconductor device further includes a heat sink mounted to the base plate, via thermal paste and a metal ring. A center hole of the metal ring is provided to face the semiconductor chip and the thermal paste fills the center hole. Further, the metal ring is formed using a material having about a same hardness as the heat sink, or a material having a lower hardness than the hardness of the heat sink.