A semiconductor device includes a first die, a second die on the first die, and a third die on the second die, the second die being interposed between the first die and the third die. The first die includes a first substrate and a first interconnect structure on an active side of the first substrate. The second die includes a second substrate, a second interconnect structure on a backside of the second substrate, and a power distribution network (PDN) structure on the second interconnect structure such that the second interconnect structure is interposed between the PDN structure and the second substrate.

Discussed is a method of manufacturing a display device, the method including: introducing semiconductor light emitting devices including a magnetic material into a fluid chamber; transferring a substrate to the fluid chamber, the substrate including assembly electrodes, an insulating layer covering the assembly electrodes, and open holes in the insulating layer and exposing portions of both ends of the assembly electrodes; applying a magnetic force to the semiconductor light emitting devices introduced into the fluid chamber to move the semiconductor light emitting devices in one direction; and forming an electric field so that the moving semiconductor light emitting devices are disposed at preset positions of the substrate, wherein a probe pin is in contact with the assembly electrodes exposed through the open holes to individually apply a voltage to the assembly electrodes to form the electric field.

An embodiment of the present invention is an IC chip mounting apparatus includes: a conveyor configured to convey an antenna continuous body on a conveying surface, the antenna continuous body having a base material and plural inlay antennas continuously formed on the base material, the antenna continuous body having an adhesive and an IC chip placed at a reference position of each of the antennas; a measurement unit configured to measure an interval between adjacent two of the antennas of the antenna continuous body; a press unit moving machine configured to sequentially feed out press units each having a pressing surface, from a waiting position, to move each of the press units along the conveying surface; and a controller configured to control timing of feeding out each of the press units from the waiting position based on the interval measured by the measurement unit, so that the pressing surface of each of the press units presses a predetermined region containing the reference position of each of the antennas on the conveying surface.

An overall displacement tolerance applicable to each pixel tile in a plurality of pixel tiles to be used as parts of an image rendering surface is determined. Each pixel tile in the plurality of pixel tiles comprises a plurality of sub-pixels. Random displacements are generated in each pixel tile in the plurality of pixel tiles based on the overall displacement tolerance. The plurality of image rendering tiles with the random displacements are combined into the image rendering surface.

Disclosed are exemplary embodiments of systems and methods of applying thermal interface materials (TIMs). The thermal interface materials may be applied to a wide range of substrates and components, such as lids or integrated heat spreaders of integrated circuit (IC) packages, board level shields, heat sources (e.g., a central processing unit (CPU), etc.), heat removal/dissipation structures or components (e.g., a heat spreader, a heat sink, a heat pipe, a vapor chamber, a device exterior case or housing, etc.), etc.

A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

A device is disclosed which includes, in one illustrative example, an integrated circuit die having an active surface and a molded body extending around a perimeter of the die, the molded body having lips that are positioned above a portion of the active surface of the die. Another illustrative example includes an integrated circuit die having an active surface, a molded body extending around a perimeter of the die and a CTE buffer material formed around at least a portion of the perimeter of the die adjacent the active surface of the die, wherein the CTE buffer material is positioned between a portion of the die and a portion of the molded body and wherein the CTE buffer material has a coefficient of thermal expansion that is intermediate a coefficient of thermal expansion for the die and a coefficient of thermal expansion for the molded body.

Example implementations include a method of mass transfer of display elements, by depositing one or more resist layers between one or more display elements disposed on a photoemitting layer, depositing at least one stress buffer layer between the resist layers, removing the resist layer and at least a portion of the photoemitting layer disposed in contact with the resist layers to form resist layer gaps on a wafer substrate, dicing the wafer substrate at the resist layer gaps to form at least one wafer die, separating the wafer substrate from the display elements by irradiation at corresponding first surfaces of the display elements, removing the stress buffer layers from the wafer die, and bonding the portion of the display elements to a first handler substrate at one or more electrode pads of the portion of the display elements.

A light-emitting element including: a first semiconductor layer doped with a first type of dopant; a second semiconductor layer doped with a second type of dopant that is different from the first type of dopant; and an active layer between the first semiconductor layer and the second semiconductor layer, wherein a length of the light-emitting element measured in a first direction, which may be a direction in which the first semiconductor layer, the active layer, and the second semiconductor layer may be arranged, may be shorter than the width measured in a second direction that is perpendicular to the first direction.

A process for bonding chips to a substrate by direct bonding includes providing a support with which the chips are in contact, the chips in contact with the support being separate from one another. This bonding process also includes forming a liquid film on one face of the substrate, bringing the chips into contact with the liquid film, where the action of bringing the chips into contact with the liquid film causes attraction of the chips toward the substrate, and evaporating the liquid film in order to bond the chips to the substrate by direct bonding.