A display device includes LEDs, a circuit board, an insulating layer, conductive posts, a control conductive plate, and a common conductive strip. The circuit board includes first pads and a second pad surrounding the first pads. The LEDs are on an insulating layer covering the first pads, each including a first and second electrode pad. The conductive posts are on and connected to a first portion of the first pads, and penetrate the insulation layer. The control conductive plate is electrically connected to one of the first electrode pads and the conductive posts. The common conductive strip is on the insulation layer and electrically connected to the second pad and a second electrode pad. Each first electrode pad is electrically connected to the first pads. A second portion of the first pads is completely covered by the insulation layer and overlapped with the common conductive strip and the insulation layer.

A display device includes a pixel electrode disposed on a substrate and including a reflective electrode layer and an upper electrode layer, a contact electrode disposed on the pixel electrode, light-emitting elements disposed on the contact electrode and disposed perpendicular to the pixel electrode, a planarization layer disposed on the pixel electrode, the planarization layer filling a space between the light-emitting elements, and a common electrode disposed on the planarization layer and the light-emitting elements, and a size of the contact electrode is equal to a size of each of the light-emitting elements in a plan view, and the upper electrode layer is disposed on the reflective electrode layer and is in a polycrystalline phase.

A display device includes a partition wall on a substrate, a plurality of light emitting elements respectively located on a plurality of emission areas defined by the partition wall, the plurality of light emitting elements extend in a thickness direction of the substrate, a base resin located in the plurality of emission areas, and a plurality of optical patterns located on at least one of the plurality of emission areas, wherein the plurality of emission areas are arranged in a RGBG matrix pattern by the partition wall.

The present disclosure discloses a display device, including a glass substrate and a plurality of light emitting diodes (LEDs). The glass substrate includes a first side and a second side. The LEDs include a first LED and a second LED. Compared with a reference anode signal, a first anode signal received by the first LED has a first anode signal difference and a second anode signal received by the second LED has a second anode signal difference. The first anode signal difference is smaller than the second anode signal difference. Compared with a reference cathode signal, a first cathode signal received by the first LED has a first cathode signal difference and a second cathode signal received by the second LED has a second cathode signal difference. The first cathode signal difference is larger than the cathode anode signal difference.

The disclosure provides a display device and a manufacturing method thereof. The display device includes a substrate, a spacer layer, a light emitting element, and an optical layer. The spacer layer is disposed on the substrate and includes openings. The light emitting element and the optical layer are disposed in the opening.

Discussed is an apparatus and a method of manufacturing a display using a micro light emitting diode (LED). A method of manufacturing a display device using a light emitting element includes providing a substrate having an individual pixel position defined by a pair of assembly electrodes; moving the light emitting element including a magnetic body on to the substrate using a magnetic chuck having an electromagnet; assembling the light emitting element at the individual pixel position using the magnetic chuck; and recovering a remaining light emitting element which is not assembled at the individual pixel position using the magnetic chuck.

A display device, according to an embodiment of the present invention, comprises a semiconductor light-emitting element, the semiconductor light-emitting element comprising: a first conductive electrode; an undoped semiconductor layer formed on the first conductive electrode; a first conductive semiconductor layer formed on the undoped semiconductor layer; an active layer formed on the first conductive semiconductor layer; a second conductive semiconductor layer formed on the active layer; and a second conductive electrode formed on the second conductive semiconductor layer; wherein the first conductive electrode is formed to cover a part of a side surface of the first conductive semiconductor layer.

The present invention relates to a display apparatus, specifically to a display apparatus using semiconductor light-emitting elements of a few micrometers to tens of micrometers in size. The present invention provides a display apparatus comprising: a base part; a partition part having a plurality of grooves; a plurality of semiconductor light-emitting elements arranged on the base part and mounted in the plurality of grooves; first and second wiring electrodes arranged on one side and the other side of each of the semiconductor light-emitting elements, respectively; an assembly electrode arranged on the base part and arranged on the one side of each of the semiconductor light-emitting elements; and a dielectric layer arranged on the base part and arranged between the assembly electrode and the first wiring electrode, wherein each of the plurality of grooves includes at least one recess portion formed in the horizontal direction with respect to the base part.

A method of manufacturing a micro-LED comprises the steps of forming an n-doped connecting layer of III-nitride material over a porous region of III-nitride material, and forming an electrically-insulating mask layer on the n-doped connecting layer. The method comprises the steps of removing a portion of the mask to expose an exposed region of the n-doped connecting layer, and forming an LED structure on the exposed region of the n-doped connecting layer. A method of manufacturing an array of micro-LEDs comprises the step of removing a portion of the mask to expose an array of exposed regions of the n-doped connecting layer, and forming an LED structure on each exposed region of the n-doped connecting layer. A micro-LED and array of micro-LEDs are also provided.

A display panel includes a display module and a lens layer. The display module has a display region and includes a plurality of pixel units disposed in the display region and distributed in an array, each pixel unit is configured to emit light. The lens layer is disposed on a display side of the display module. Light emitted by the plurality pixel units passes through the lens layer to form a display image, and the display image includes a plurality of pixels distributed in an array. The number of pixel units included in a row of pixel units in a first direction is less than the number of pixels included in a row of pixels in the first direction. A first pixel distance is smaller than a first pixel unit distance.