A display apparatus comprises a display panel on which a plurality of pixels are displayed, a plurality of signal lines to which a signal required to drive the display panel is supplied, and an electrostatic discharge circuit connected between each of the plurality of signal lines and the electrostatic discharge line. The electrostatic discharge circuit includes first and second current paths between the signal line and the electrostatic discharge line, a first electrostatic discharge circuit connected to the first current path, including a plurality of first thin film transistors having a first gate electrode connected to the second current path and a second gate electrode connected to the first current path, and a second electrostatic discharge circuit connected to the second current path, including at least one second thin film transistor having a first gate electrode connected to the first current path and a second gate electrode connected to the first current path.

The present disclosure provides an electrostatic protection circuit and an electronic device. The electrostatic protection circuit is connected to a first end point and a second end point of a power device. The electrostatic protection circuit is configured to allow bilateral electrostatic protection between the first end point and the second end point of the power device. The power device includes a transverse high-electron-mobility transistor (HEMT).

As an example, a circuit is provided. The circuit includes an ESD (electrostatic discharge) clamping circuit with a control signal controlling clamping operations of the ESD clamping circuit. The circuit further includes a counter coupled to the control signal of the ESD clamping circuit. The counter produces a set of output signals responsive to the control signal. The circuit also includes a communications interface for coupling to the set of output signals of the counter. The communications interface also couples to communications circuitry external to the circuit.

A display apparatus comprises a display panel on which a plurality of pixels are displayed, a plurality of signal lines to which a signal required to drive the display panel is supplied, and an electrostatic discharge circuit connected between each of the plurality of signal lines and the electrostatic discharge line. The electrostatic discharge circuit includes first and second current paths between the signal line and the electrostatic discharge line, a first electrostatic discharge circuit connected to the first current path, including a plurality of first thin film transistors having a first gate electrode connected to the second current path and a second gate electrode connected to the first current path, and a second electrostatic discharge circuit connected to the second current path, including at least one second thin film transistor having a first gate electrode connected to the first current path and a second gate electrode connected to the first current path.

A detection device comprises a substrate, a terminal part provided on the substrate and having a plurality of terminals, a first protection circuit unit provided on the substrate and having a plurality of first protection circuits, a selector unit provided on the substrate and having a plurality of selectors, a second protection circuit unit provided on the substrate and having a plurality of second protection circuits and a sensor unit provided on the substrate and having a plurality of sensors. The first protection circuit unit is provided between the terminal unit and the selector unit, and the second protection circuit unit is provided between selector unit and the sensor unit.

A clamp circuit includes an electrostatic discharge (ESD) detection circuit coupled between a first node and a second node. The clamp circuit further includes a first transistor of a first type. The first transistor has a first gate coupled to at least the ESD detection circuit by a third node, a first drain coupled to the first node and a first source coupled to the second node. The clamp circuit further includes a charging circuit coupled between the second node and the third node, and configured to charge the third node during an ESD event at the second node.

An electrostatic discharge protection circuit is disclosed. It comprises a stacked drain-ballasted NMOS devices structure and a gate bias circuit. The gate bias circuit includes an inverter, a first gate bias output terminal, and a second gate bias output terminal. The first gate bias output terminal is coupled to a gate of a first one of the drain-ballasted NMOS devices. The second gate bias output terminal runs from an output of the inverter to a gate of a second one of the drain-ballasted NMOS devices.

An electrostatic protection circuit and a semiconductor device include: a first diode whose anode is connected to a signal terminal; a second diode whose cathode is connected to a cathode of the first diode and whose anode is connected to a GND terminal; and a depletion type MOS transistor connected in parallel with the first diode.

A power switch circuit comprises a first level shifter configured to turn on a first switching element configured to receive a supply voltage from an external voltage supply pad in response to a program operation of a one-time programmable (OTP) memory cell array, a second level shifter configured to turn on a second switching element and provide the supply voltage to the OTP memory cell array in response to the program operation, a third level shifter configured to turn on a third switching element and provide an internally generated power voltage to the OTP memory cell array in response to a read operation of the OTP memory cell array, and an Electro-Static Discharge (ESD) protection circuit configured to turn off the first switching element in response to a flow of ESD voltage from the voltage supply pad.

A transistor includes a substrate of a first conductivity type. An epitaxial layer of the first conductivity type is formed at a top surface of the substrate. A first region of the first conductivity type is formed as a well in the epitaxial layer. A second region of a second conductivity type is formed as a well in the epitaxial layer adjacent to the first region and the second conductivity type is opposite of the first conductivity type. A third region of the second conductivity type is formed in the first region and a portion of the first region forms a channel region between the third region and the second region. An emitter region of the first conductivity type is formed in the second region. A gate dielectric is formed over the channel region, and a gate electrode is formed on gate dielectric with the gate electrode overlapping at least a portion of second region and the third region.