In an embodiment an optical component includes an optical body at least partially translucent to visible light and a coating directly arranged at the optical body, wherein the coating has a reflection coefficient of at least 0.8 for at least one wavelength range in a range from 380 nm to 1500 nm and an average thickness between 10 μm and 200 μm inclusive, wherein the coating has a polysiloxane as base material, and wherein the polysiloxane comprises —SiO.sub.3/2 units.

An electromagnetic wave detector includes: a substrate; an insulating layer provided on the substrate; a graphene layer provided on the insulating layer; a pair of electrodes provided on the insulating layer, with the graphene layer being interposed therebetween; and buffer layers interposed between the graphene layer and the electrodes to separate the graphene layer and the electrodes from each other. The electromagnetic wave detector array includes arrayed electromagnetic wave detectors that are the same as or different from each other.

A semiconductor device includes a semiconductor structure formed on a substrate, a gate formed on a first side of the semiconductor structure, and a charge collector layer formed on a second side of the semiconductor structure.

The invention relates to quantum dot and photodetector technology, and more particularly, to quantum dot infrared photodetectors (QDIPs) and focal plane array. The invention further relates to devices and methods for the enhancement of the photocurrent of quantum dot infrared photodetectors in focal plane arrays.

An optical sensor includes a substrate having a plurality of first light receiving elements in a surface, and a light blocking film having a plurality of first openings. The first light receiving elements are provided such that a direction of travel of incident light defined by each of the first openings is different from a thickness direction of the substrate and form at least one light receiving element set in which an angle of incidence defined between the direction of travel of the incident light and the thickness direction is the same with respect to the light receiving elements. In a view projected in the thickness direction, a positional relationship between the first light receiving elements included in a light receiving element set and the corresponding first openings has rotational symmetry of order 3 or more about an axis along the thickness direction.

A single photon counting sensor array includes one or more emitters configured to emit a plurality of pulses of energy, and a detector array comprising a plurality of pixels. Each pixel includes one or more detectors, a plurality of which are configured to receive reflected pulses of energy that were emitted by the one or more emitters. A mask material is positioned to cover some but not all of the detectors of the plurality of pixels to yield blocked pixels and unblocked pixels so that each blocked pixel is prevented from detecting the reflected pulses of energy and therefore only detects intrinsic noise.

The present disclosure relates to a photodiode device, which overcomes the drawbacks of conventional devices like increased dark currents. The photodiode device includes a semiconductor substrate, at least one doped well of a first type of electric conductivity at a main surface of the substrate and at least one doped region of a second type of electric conductivity being adjacent to the doped well. The at least one doped well and the at least one doped region are electrically contactable. On a portion of an upper surface of the doped well a protection structure is arranged. The protection structure protects the upper surface of the underlying doped well from an etching process for removing a spacer layer.

A method for providing an electric waveform at a cryogenic temperatures includes providing an optical signal, which comprises an optical waveform, guiding the optical signal into a cryogenic chamber, and converting the optical waveform of the optical signal into an electric waveform inside the cryogenic chamber.

A sub-pixel array device includes a plurality of optoelectronic devices disposed on a substrate, the plurality of optoelectronic devices including a light-emitting device and a light-converting device, and a bank structure that separates adjacent optoelectronic devices. Each optoelectronic device includes a first electrode, a second electrode, an active layer disposed between the electrodes and including a solution processable semiconductor, and a photo-crosslinkable material disposed between the first electrode and the second electrode. The photo-crosslinkable material may be incorporated within the active layer of each of the plurality of optoelectronic devices, so as to form a light-emitting device having a photo-crosslinkable emissive layer and a light-converting device having a photo-crosslinkable photo-active layer. The photo-crosslinkable material may be disposed between the active layer and the second electrode, such as incorporated within a capping layer or a charge transport layer disposed between the active layer and the second electrode.

Disclosed are an array substrate and a preparation method thereof, and a digital microfluidic chip. The preparation method includes: forming a plurality of photoelectric detection devices on a silicon-based substrate; transferring the photoelectric detection devices to a base substrate by adopting a micro transfer printing process; and forming a plurality of transparent driving electrodes on the base substrate, wherein the transparent driving electrodes are insulated from the photoelectric detection devices.