A lens module and a manufacturing method of the lens module are provided. The manufacturing method includes the following steps. Firstly, a circuit substrate is provided. Then, an image sensor chip is placed on a top surface of the circuit substrate. Then, plural electrical connection paths are formed between the image sensor chip and the circuit substrate. Then, plural stacking spacer structures are formed on a top surface of the image sensor chip by a stacking process. Then, plural protective sidewalls are formed to cover the electrical connection paths. Then, a glass substrate is placed over the stacking spacer structures. Then, a lens holder structure is placed on a substrate top surface of the glass substrate directly. The glass substrate is supported by the stacking spacer structures. Consequently, the glass substrate can be maintained at the position over the image sensor chip.

An image sensing device may include a pixel array. The pixel array includes a sensing region including a plurality of unit pixels, each unit pixel configured to detect incident light to generate photocharge indicative of the detected incident light, a bias field region doped with impurities and disposed along an edge of the sensing region and a contact portion connected to the bias field region to apply a bias voltage to the bias field region to move the photocharge in the sensing region.

To improve a frame rate in a solid-state imaging element that compares a reference signal and a pixel signal.

The solid-state imaging element includes a differential amplifier circuit, a transfer transistor, and a source follower circuit. The differential amplifier circuit amplifies a difference between the potentials of a pair of input nodes and outputs the difference from an output node. The transfer transistor transfers charge from a photoelectric conversion element to a floating diffusion layer. The auto-zero transistor short-circuits the floating diffusion layer and the output node in a predetermined period. The source follower circuit supplies a potential to one of the pair of input nodes according to a potential of the floating diffusion layer.

A light-receiving device includes: a first chip having a pixel region in which a sensor pixel is provided; a second chip including a processing circuit that performs signal processing on a sensor signal outputted from the sensor pixel, the second chip being stacked on the first chip; and a first alignment mark provided in the pixel region of the first chip to correspond to a second alignment mark provided in the second chip.

A solid-state imaging device capable of weakening incident light that passes through an effective pixel region and enters an optical black pixel region. Among a plurality of straight groove portions constituting a trench portion, a first straight groove portion is formed at a boundary between an effective pixel region and an optical black pixel region (OPB pixel region), a plurality of second straight groove portions are formed in the OPB pixel region and parallel to the boundary in a plan view, and a third straight groove portion is formed between photoelectric conversion units in the effective pixel region, a specific straight groove portion, the specific straight groove portion being the first groove portion and/or being one or more of the plurality of second straight groove portions, has a different shape from the third straight groove portion, and a light shielding material is embedded in the specific straight groove portion.

The present invention includes a fused polycyclic aromatic compound represented by general formula (1), where in formula (1), one among R.sub.1 and R.sub.2 is represented by general formula (2) and represents a substituent having three to five ring structures, and the other among R.sub.1 and R.sub.2 represents a hydrogen atom, where in formula (2), n represents an integer of 0-2.sub.R. —R.sub.3 represents a divalent linking group obtained by removing two hydrogen atoms from benzene or naphthalene, R.sub.4 represents a divalent linking group obtained by removing two hydrogen atoms from an aromatic ring of an aromatic hydrocarbon, and when n is 2, a plurality of R.sub.4's may be the same as or different from each other, R.sub.5 represents an aromatic hydrocarbon group.

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A sensor device according to the present disclosure includes: a Peltier element; a sensor element thermally connected to a cooling surface of the Peltier element; and a package substrate that is made of ceramic, is thermally connected to a heat dissipation surface of the Peltier element, and accommodates the Peltier element and the sensor element.

A light receiving element according to the present disclosure includes a sensor substrate (102) and a circuit board (101). The sensor substrate (102) is provided with a light receiving region (103), a pair of voltage application electrodes, and an incident surface electrode (104). The light receiving region (103) photoelectrically converts incident light into signal charges. A voltage is alternately applied to the pair of voltage application electrodes to generate, in the light receiving region (103), an electric field that time-divides the signal charges and distributes the signal charges to a pair of charge accumulation electrodes. The incident surface electrode (104) is provided on an incident surface of light in the light receiving region (103), and a voltage equal to or lower than a ground potential is applied to the incident surface electrode. The circuit board (101) is provided on a surface facing the incident surface of the light, of the sensor substrate (102). The circuit board (101) is provided with a pixel transistor that processes the signal charges accumulated in the charge accumulation electrodes.

A solid-state imaging element (100) includes a first photoelectric conversion unit and a second photoelectric conversion unit (600). The first and second photoelectric conversion units (500, 600) are joined at joint surfaces facing each other, and include an upper electrode (502, 602), a lower electrode (508A, 608), a photoelectric conversion film (504, 604), and a storage electrode (510, 610). The lower electrode (508A) of the first photoelectric conversion unit (500) is connected to a charge storage unit (314) via a first through electrode (460A, 460B) penetrating a semiconductor substrate (300). The lower electrode (608) of the second photoelectric conversion unit (600) is connected to the charge storage unit (314) via: a second electrode (673) provided on a joint surface of the second photoelectric conversion unit (600); a first electrode (573) provided on a joint surface of the first photoelectric conversion unit (500); a second through electrode (560) penetrating the first photoelectric conversion unit (500); and the first through electrode (460A, 460B).

A solid-state imaging element (100) includes a first photoelectric conversion unit and a second photoelectric conversion unit (600). The first and second photoelectric conversion units (500, 600) are joined at joint surfaces facing each other, and include an upper electrode (502, 602), a lower electrode (508A, 608), a photoelectric conversion film (504, 604), and a storage electrode (510, 610). The lower electrode (508A) of the first photoelectric conversion unit (500) is connected to a charge storage unit (314) via a first through electrode (460A, 460B) penetrating a semiconductor substrate (300). The lower electrode (608) of the second photoelectric conversion unit (600) is connected to the charge storage unit (314) via: a second electrode (673) provided on a joint surface of the second photoelectric conversion unit (600); a first electrode (573) provided on a joint surface of the first photoelectric conversion unit (500); a second through electrode (560) penetrating the first photoelectric conversion unit (500); and the first through electrode (460A, 460B).