An infrared sensor device includes a semiconductor substrate, at least one sensor element that is micromechanically formed in the semiconductor substrate, and at least one calibration element, which is micromechanically formed in the semiconductor substrate, for the sensor element. An absorber material is arranged on the semiconductor substrate in the area of the sensor element and the calibration element. One cavern each is formed in the semiconductor substrate substantially below the sensor element and substantially below the calibration element. The sensor element and the calibration element are thermally and electrically isolated from the rest of the semiconductor substrate by the caverns. The infrared sensor device has high sensitivity, calibration functionality for the sensor element, and a high signal-to-noise ratio.

A system includes a pixel including a diffusion layer in contact with an absorption layer. A transparent conductive oxide (TCO) is electrically connected to the diffusion layer. An overflow contact is in electrical communication with the TCO. The overflow contact can be spaced apart laterally from the diffusion layer. The pixel can be one of a plurality of similar pixels arranged in a grid pattern, wherein each pixel has a respective overflow contact, forming an overflow contact grid offset from the grid pattern.

An infrared detector includes: a laminate of semiconductor in which a first electrode layer, a light receiving layer, and a second electrode layer are laminated in this order; a first insulating film configured to be in contact with the laminate and covers a surface of the laminate; and a second insulating film configured to be in contact with and covers a surface of the first insulating film opposite to an interface between the first insulating film and the laminate, wherein the first insulating film is configured to have a lower Gibbs free energy than an oxide of a material from which the laminate is formed, and in the second insulating film, diffusion of impurity is larger than in the first insulating film.

Provided is a texture structure manufacturing method with which a texture structure can be obtained simply. The texture structure manufacturing method comprises: growing a layer including a randomly distributed nanostructure on a major surface of a base material; forming a light-scattering body having the nanostructure embedded therein; and exposing a surface of the light-scattering body by removing a part or all of the base material and the layer including the nanostructure.

A unit cell of a focal plane array (FPA) is provided. The unit cell includes a first layer having a first absorption coefficient. The first layer is configured to: sense a first portion of a polarized light of an incident light having a first portion and a second portion, convert the first sensed portion of incident light into a first electrical signal, and pass through a second portion of the incident light. Further, the unit cell includes a second layer having a second absorption coefficient and positioned adjacent to the first layer and configured to receive the second portion of the incident light. The second layer is configured to convert the second portion of the incident light to a second electrical signal. Also, the unit cell includes a readout integrated circuit positioned adjacent to the second layer and configured to receive the first electrical signal and the second electrical signal.

A control circuit for infrared detectors, includes: a driving circuit configured to drive a plurality of infrared detectors and generates, for each frame, a signal according to infrared rays incident on the plurality of infrared detectors; a holding circuit configured to hold a first signal generated by the driving circuit in a first frame and a second signal generated by the driving circuit in a second frame before the first frame; a difference calculation circuit configured to calculate a difference between the first signal and the second signal; and an amplifier circuit configured to amplify and output the difference calculated by the difference calculation circuit.

An imaging device includes a first substrate including a pixel array and a first multilayer wiring layer. The first multilayer wiring layer includes a first wiring that receives electrical signals based on electric charge generated by at least one photoelectric conversion unit, and a plurality of second wirings. The imaging device includes a second substrate including a second multilayer wiring layer and a logic circuit that processes the electrical signals. The second multilayer wiring layer includes a third wiring bonded to the first wiring, and a plurality of fourth wirings. At least one of the plurality of fourth wirings being bonded to at least one of the plurality of second wirings. The second multilayer wiring layer includes at least one fifth wiring that is connected to the plurality of fourth wirings and that receives a power supply signal.

A unit cell of a focal plane array (FPA) is provided. The unit cell includes a first layer having a first absorption coefficient. The first layer is configured to: sense a first portion of a polarized light of an incident light having a first portion and a second portion, convert the first sensed portion of incident light into a first electrical signal, and pass through a second portion of the incident light. Further, the unit cell includes a second layer having a second absorption coefficient and positioned adjacent to the first layer and configured to receive the second portion of the incident light. The second layer is configured to convert the second portion of the incident light to a second electrical signal. Also, the unit cell includes a readout integrated circuit positioned adjacent to the second layer and configured to receive the first electrical signal and the second electrical signal.

The system-on-chip camera comprises a semiconductor body with an integrated circuit, a sensor substrate, sensor elements arranged in the sensor substrate according to an array of pixels, a light sensor in the sensor substrate apart from the sensor elements, and a lens or an array of lenses on a surface of incidence. Filter elements, which may especially be interference filters for red, green or blue, are arranged between the sensor elements and the surface of incidence.

The system-on-chip camera comprises a semiconductor body (1) with an integrated circuit (40), a sensor substrate (2), sensor elements (3) arranged in the sensor substrate according to an array of pixels, a light sensor (4) in the sensor substrate apart from the sensor elements, and a lens or an array of lenses (15) on a surface of incidence (30). Filter elements (11, 12, 13), which may especially be interference filters for red, green or blue, are arranged between the sensor elements and the surface of incidence.