Provided is an image sensor including: a substrate including a first pixel domain and a second pixel domain that are adjacent to each other in a first direction, the first pixel domain including first pixels and the second pixel domain including second pixels; a first color filter provided on a first surface of the substrate and vertically overlapping the first pixels; a first microlens provided on the first color filter and each of the first pixels; and a second microlens provided on the first surface of the substrate and vertically overlapping at least a portion of each of the second pixels, wherein a second refractive index of the second microlens is greater than a first refractive index of the first microlens, and wherein a level difference between an uppermost part of the first microlens and an uppermost part of the second microlens is within about 2% of a maximum height of the first microlens.

A method of fabricating an image sensor includes forming a semiconductor substrate of a first conductivity type, forming a pixel isolation trench in in the semiconductor substrate to define pixel regions, forming a liner insulating layer in the pixel isolation trench, doping the liner insulating layer with dopants of a first conductivity type, forming a semiconductor layer on the liner insulating layer to fill the pixel isolation trench after the doping of the dopants, and performing a thermal treatment process on the semiconductor substrate.

The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.

An image sensing device includes a substrate layer in which an array of photoelectric conversion elements is formed, grid structures disposed over the substrate layer to divide space above the substrate into different sensing regions, each grid structure including an air layer, color filters formed to fill bottom portions of spaces between the grid structures, the color filters having a higher refractive index than the air layer, and a lens layer disposed over the grid structures and the color filters such that part of the lens layer fills top portions of the spaces between the grid structures, the lens layer having a higher refractive index than of the color filters.

A photo sensor, a manufacturing method thereof, and a display panel are disclosed. By an ion implantation method forming an N-type region and a P-type region on a surface of polycrystalline silicon in a same layer respectively, compatibility with an ion implantation process is ensured, while covering a layer of an amorphous silicon photosensitive layer on the polycrystalline silicon enhances light absorption ability and can increase photo-generated electron-hole pairs. Furthermore, built-in electric fields exist on a horizontal direction and a vertical direction, which can more effectively separate the electron-hole pairs to enhance photo-generated electric current to improve accuracy of fingerprint recognition.

An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.

An optical filter for an image sensor includes first opaque zones. Each of the first opaque zones occupies a surface area equal to the surface area of at least one first lens in this same first zone.

Provided are an imaging device and an electronic device configured such that deterioration in imaging performance due to high-angle incident light can be inhibited. The imaging device includes: a semiconductor substrate including a plurality of photoelectric conversion elements; a plurality of color filters that are provided on the semiconductor substrate and face each of the plurality of photoelectric conversion elements; and a partition wall that is provided on the semiconductor substrate and provides separation between one color filter and another color filter adjacent to each other among the plurality of color filters. The partition wall includes a first metal layer, a translucent first partition wall layer that covers a side surface of the first metal layer, and a translucent second partition wall layer located between the first metal layer and the first partition wall layer. A refractive index of the second partition wall layer is larger than a refractive index of the first partition wall layer.

In general, the disclosure describes a sensor comprising a photo-sensitive silicon substrate configured to detect ultraviolet (UV), visible, and near-infrared (NIR) light and an upconversion layer comprising a plurality of crystals configured to convert short wave infrared light to UV, visible, or NIR light. An example sensor includes an upconversion layer comprising a plurality of crystals configured to convert electromagnetic radiation comprising a first range of wavelengths greater than 1100 nm to electromagnetic radiation comprising a second range of wavelengths less than or equal to 1100 nm and a photo-sensitive silicon substrate configured to detect the electromagnetic radiation comprising the second range of wavelengths.

The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.