A pixel includes a semiconductor layer with a charge accumulation layer extending in the semiconductor layer. A transistor has a read region penetrating into said semiconductor layer down to a first depth. An insulating wall penetrates into the semiconductor layer from an upper surface and containing an insulated conductor connected to a node of application of a potential. The insulating wall includes at least a portion provided with a deep insulating plug penetrating into the insulated conductor down to a second depth greater than the first depth. A continuous portion of the insulating wall laterally delimits, at least partially, a charge accumulation area and includes a wall portion with the deep insulating plug at least partially laterally delimiting the read region of the transistor.

A radiation detector includes a substrate, a plurality of device sections each disposed separately from the substrate and each including a photoelectric conversion device, a buried layer formed in a region between the device sections, and a wavelength conversion layer that is formed on the plurality of device sections and converts entered radiation into light. Any of the device sections includes a first surface that faces the wavelength conversion layer, and a second surface that faces the substrate, and an upper end of the buried layer is disposed at a position higher than the second surface of the any of the device sections.

An optical sensor including a first material layer comprising at least a first material; a second material layer comprising at least a second material that is different from the first material, where a material bandgap of the first material is larger than a material bandgap of the second material; and a graded material layer arranged between the first material layer and the second material layer, the graded material layer comprising an alloy of at least the first material and the second material having compositions of the second material that vary along a direction that is from the first material to the second material.

A pixel includes a semiconductor layer with a charge accumulation layer extending in the semiconductor layer. A transistor has a read region penetrating into said semiconductor layer down to a first depth. An insulating wall penetrates into the semiconductor layer from an upper surface and containing an insulated conductor connected to a node of application of a potential. The insulating wall includes at least a portion provided with a deep insulating plug penetrating into the insulated conductor down to a second depth greater than the first depth. A continuous portion of the insulating wall laterally delimits, at least partially, a charge accumulation area and includes a wall portion with the deep insulating plug at least partially laterally delimiting the read region of the transistor.

A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for the second group of photodiodes on a first semiconductor donor wafer; defining a first interconnect layer on the germanium-silicon layer; defining integrated circuitry for controlling pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer; bonding the first interconnect layer with the second interconnect layer; defining the pixels of an image sensor array on a second semiconductor donor wafer; defining a third interconnect layer on the image sensor array; and bonding the third interconnect layer with the germanium-silicon layer.

An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated. After that, the first and second structures are bonded to each other so that metal layers included in the first and second structures are bonded to each other; thus, an imaging device having a three-dimensional integration structure is formed.

It is possible to curb noise, color mixing, and the like. An imaging apparatus includes: a semiconductor; a photoelectric conversion unit that is provided on the semiconductor substrate and generates electrical charge in accordance with the amount of received light through photoelectric conversion; an electrical charge holding unit that is disposed on a side closer to a first surface of the semiconductor substrate than the photoelectric conversion unit and holds the electrical charge transferred from the photoelectric conversion unit; an electrical charge transfer unit that transfers the electrical charge from the photoelectric conversion unit to the electrical charge holding unit; a vertical electrode that transmits the electrical charge generated by the photoelectric conversion unit to the electrical charge transfer unit and is disposed in a depth direction of the semiconductor substrate, and a first light control unit that is disposed on a side closer to a second surface that is a side opposite to the first surface of the semiconductor substrate than the vertical electrode, is disposed at a position overlapping the vertical electrode in a plan view of the semiconductor substrate from a normal line direction of the first surface, and has a T-shaped section in the depth direction of the substrate. The first light control member includes a first light control portion and a second light control portion extending in mutually intersecting directions in an integrated structure.

Provided is a solid-state image sensor and an electronic device capable of suppressing the occurrence of a strong electrical field near a transistor while being compact. The solid-state image sensor includes a photoelectric conversion element that performs photoelectric conversion, an element isolation that penetrates from a first main surface to a second main surface of a substrate and that is formed between pixels including the photoelectric conversion element, and a conductive part provided in close contact with a first main surface side of the element isolation.

There is provided a solid-state imaging device that includes a photoelectric conversion unit, a transfer gate, a floating diffusion unit, and a transistor. The photoelectric conversion unit produces a charge according to incident light. The transfer gate has a columnar shape having an opening that is continuous in a vertical direction, and transfers the charge from the photoelectric conversion unit. The floating diffusion unit is formed extending to a region surrounded by the opening of the transfer gate, and converts the transferred charge into a voltage signal. The transistor is electrically connected to the floating diffusion unit via a diffusion layer.

An image sensing device includes a first impurity region, a second impurity region, a floating diffusion region, and a transfer gate. The first impurity region is disposed in a semiconductor substrate and includes impurities with a first doping polarity, and the first impurity region generates photocharges by performing photoelectric conversion in response to incident light. The second impurity region is disposed over the first impurity region and has impurities with a second doping polarity different from the first doping polarity, and the second impurity region contacts with on some portions of the first impurity region. The floating diffusion region disposed over the second impurity region. The transfer gate couples to the floating diffusion region and transmits photocharges generated by the first impurity region to the floating diffusion region. The first impurity region is arranged not in contact with the transfer gate.