Provided is a field shaping multi-well detector and method of fabrication thereof. The detector is configured by depositing a pixel electrode on a substrate, depositing a first dielectric layer, depositing a first conductive grid electrode layer on the first dielectric layer, depositing a second dielectric layer on the first conductive grid electrode layer, depositing a second conductive grid electrode layer on the second dielectric layer, depositing a third dielectric layer on the second conductive grid electrode layer, depositing an etch mask on the third dielectric layer. Two pillars are formed by etching the third dielectric layer, the second conductive grid electrode layer, the second dielectric layer, the first conductive grid electrode layer, and the first dielectric layer. A well between the two pillars is formed by etching to the pixel electrode, without etching the pixel electrode, and the well is filled with a-Se.

Memory devices and methods of manufacturing memory devices are provided. The device and methods described decrease the resistivity of word lines by forming word lines comprising low resistivity materials. The low resistivity material has a resistivity in a range of from 5 μΩcm to 100 μΩcm. Low resistivity materials may be formed by recessing the word line and selectively growing the low resistivity materials in the recessed portion of the word line. Alternatively, low resistivity materials may be formed by depositing a metal layer and silicidating the metal in the word line region and in the common source line region.

A method of manufacturing a photo sensor includes forming a first conductive layer on a substrate, the first conductive layer including a metal layer and a transparent conductive oxide layer formed on the metal layer, forming a photoconductive layer on the first conductive layer, forming a second conductive layer on the photoconductive layer, forming a first photoresist pattern on the second conductive layer, etching the second conductive layer using the first photoresist pattern as an etch mask to form a second electrode, deforming the first photoresist pattern to form a second photoresist pattern, and etching the photoconductive layer and the first conductive layer using the second photoresist pattern to form a photoconductive pattern and a first electrode, respectively.

A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a base substrate; a thin film transistor on the base substrate; an insulating layer on a side of the thin film transistor away from the base substrate; a photosensor on a side of the insulating layer away from the base substrate; a passivation layer on a side of the photosensor away from the base substrate; a scintillation layer on a side of the passivation layer away from the base substrate; and a reflective layer on a side of the scintillation layer away from the base substrate. The photosensor includes a first polarity layer in direct contact with the passivation layer. All sides of the first polarity layer other than a side internal to the photosensor are entirely in direct contact with the passivation layer.

A peripheral area of the display panel is provided with a photosensitive TFT structure, the photosensitive TFT structure includes a reference TFT unit and a photosensitive TFT unit, first electrodes of a reference TFT included in the reference TFT unit and a photosensitive TFT included in the photosensitive TFT unit are connected to a signal input terminal of the photosensitive TFT structure; a second electrode of the reference TFT is connected to a second signal line of the photosensitive TFT structure; a second electrode of the photosensitive TFT is connected to a third signal line of the photosensitive TFT structure; a gate electrode of the reference TFT is connected to a first control terminal of the photosensitive TFT structure, and a gate electrode of the photosensitive TFT is connected to a second control terminal of the photosensitive TFT structure.

A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; and a first inorganic insulating film formed so as to cover at least a part of the first organic film, wherein the first inorganic insulating film has a through hole that exposes a part of the first organic film.

A photodetection device includes a substrate and a plurality of pixel units. The plurality of pixel units includes a pixel unit including a first photodetector in an active area, and a pixel unit including a second photodetector in an inactive area. The first photodetector includes a first lower electrode layer, a first lower extrinsic semiconductor layer, a first intrinsic semiconductor layer, a first upper extrinsic semiconductor layer, and a first upper electrode layer. The second photodetector includes a second lower electrode layer, a second lower extrinsic semiconductor layer, a second intrinsic semiconductor layer, a second upper extrinsic semiconductor layer, and a second upper electrode layer. The second lower electrode layer is covered with the second lower extrinsic semiconductor layer and the second intrinsic semiconductor layer.

A dynamic X-ray detecting panel, an X-ray detector including the same, and a method of driving an X-ray detector are disclosed. The method of driving the X-ray detector is a method of driving a dynamic X-ray detector including the X-ray detecting panel. The X-ray detecting panel includes multiple pixels arranged in a matrix, each of the pixels includes a readout thin film transistor, a reset thin film transistor, and a photodiode, and line reset, window time, and readout proceed with respect to the multiple pixels in each row.

A photodetection film includes at least one lower photodiode and upper photodiode layered members. The at least one lower photodiode layered member includes lower first-type, intrinsic and second-type semiconductor layers. The at least one upper photodiode layered member is disposed on the at least one lower photodiode layered member and includes upper first-type, intrinsic and second-type semiconductor layers. The upper intrinsic semiconductor layer has an amorphous silicon structure. The lower intrinsic semiconductor layer has a structure selected from one of a microcrystalline silicon structure, a microcrystalline silicon-germanium structure, and a non-crystalline silicon-germanium structure.