A display device includes LEDs, a circuit board, an insulating layer, conductive posts, a control conductive plate, and a common conductive strip. The circuit board includes first pads and a second pad surrounding the first pads. The LEDs are on an insulating layer covering the first pads, each including a first and second electrode pad. The conductive posts are on and connected to a first portion of the first pads, and penetrate the insulation layer. The control conductive plate is electrically connected to one of the first electrode pads and the conductive posts. The common conductive strip is on the insulation layer and electrically connected to the second pad and a second electrode pad. Each first electrode pad is electrically connected to the first pads. A second portion of the first pads is completely covered by the insulation layer and overlapped with the common conductive strip and the insulation layer.

A display device includes a pixel electrode disposed on a substrate and including a reflective electrode layer and an upper electrode layer, a contact electrode disposed on the pixel electrode, light-emitting elements disposed on the contact electrode and disposed perpendicular to the pixel electrode, a planarization layer disposed on the pixel electrode, the planarization layer filling a space between the light-emitting elements, and a common electrode disposed on the planarization layer and the light-emitting elements, and a size of the contact electrode is equal to a size of each of the light-emitting elements in a plan view, and the upper electrode layer is disposed on the reflective electrode layer and is in a polycrystalline phase.

A method of manufacturing a micro-LED comprises the steps of forming an n-doped connecting layer of III-nitride material over a porous region of III-nitride material, and forming an electrically-insulating mask layer on the n-doped connecting layer. The method comprises the steps of removing a portion of the mask to expose an exposed region of the n-doped connecting layer, and forming an LED structure on the exposed region of the n-doped connecting layer. A method of manufacturing an array of micro-LEDs comprises the step of removing a portion of the mask to expose an array of exposed regions of the n-doped connecting layer, and forming an LED structure on each exposed region of the n-doped connecting layer. A micro-LED and array of micro-LEDs are also provided.

A radiation-emitting semiconductor chip may include a semiconductor layer sequence having a first semiconductor layer and a second semiconductor layer, a first metallic mirror with which charge carriers can be embedded into the first semiconductor layer, a first metallic contact layer disposed atop the first metallic mirror, and a second metallic contact layer disposed atop the first metallic contact layer. A first seed layer may be disposed between the first metallic contact layer and the first metallic mirror. A second seed layer may be disposed between the first metallic contact layer and the second metallic contact layer. The radiation-emitting semiconductor chip may include a radiation exit face having a multitude of emission regions. The first metallic mirror may have a multitude of cutouts that each define a lateral extent of one of the emission regions.

A p-n junction based III-nitride device in which the p-type layers adjacent to the n-type layers are activated by thermal annealing with a porous n-type tunnel junction layer or layers. The porosity of the n-type tunnel junction layer(s) allows for gas exchange to occur, allowing efficient p-type nitride semiconductor activation. This porosification and activation step can be inserted wherever desired into an existing fabrication process for an LED, laser diode, or any other nitride semiconductor device. In one example, the device comprises multiple LED structures grown successively, separated by tunnel junctions and the buried p-type layers are activated by thermal annealing with adjacent porous n-type layers. Using this method, efficient monolithic multi-color LEDs can be formed.

A p-n junction based III-nitride device in which the p-type layers adjacent to the n-type layers are activated by thermal annealing with a porous n-type tunnel junction layer or layers. The porosity of the n-type tunnel junction layer(s) allows for gas exchange to occur, allowing efficient p-type nitride semiconductor activation. This porosification and activation step can be inserted wherever desired into an existing fabrication process for an LED, laser diode, or any other nitride semiconductor device. In one example, the device comprises multiple LED structures grown successively, separated by tunnel junctions and the buried p-type layers are activated by thermal annealing with adjacent porous n-type layers. Using this method, efficient monolithic multi-color LEDs can be formed.

Provided are a color converting substrate and a display device including same. The color converting substrate includes: a base portion in which a first light transmission area, a first light blocking area, and a second light transmission area, which are sequentially and closely arranged in a first direction, are defined; a first wavelength converting pattern located on the base portion and configured to wavelength-covert a first color light into a second color light; a second wavelength converting pattern located on the base portion and configured to wavelength-convert the first color light into a third color light; and a light transmission pattern located on the base portion and configured to transmit the first color light.

A display apparatus includes: a light-emitting device layer provided to extend over a plurality of pixels arranged two-dimensionally; a phosphor layer separated by a partition wall for each of the pixels; and a bonding structure sandwiched between the light-emitting device layer and the phosphor layer, and in which a first oxidation film, a bonding oxidation film, and a second oxidation film are stacked in order from the light-emitting device layer side.

A light-emitting device includes a substrate and an epitaxial unit. The substrate has a first and a second surface. The substrate is formed on the first surface with a plurality of protrusions. The epitaxial unit includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially disposed on the first surface of the substrate. The first surface of the substrate has a first area that is not covered by the epitaxial unit, and a second area this is covered by the epitaxial unit. A height difference (h2) between the first area and the second area is no greater than 1 μm. A display apparatus and a lighting apparatus are also disclosed.

A display device includes a substrate, a first light-emitting element, a second light-emitting element, and a third light-emitting element on the substrate, each of the first, second, and third light-emitting elements includes a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer, an opening formed in the second semiconductor layer and the third semiconductor layer of the third light-emitting element, and a wavelength conversion member located at the opening, wherein the first light-emitting element and the third light-emitting element are configured to emit first light, and the second light-emitting element is configured to emit second light, and the wavelength conversion member is configured to convert the first light from the third light-emitting element into third light.