H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/02
Semiconductor bodies; ; Multistep manufacturing processes therefor
H01L29/02
Semiconductor bodies; ; Multistep manufacturing processes therefor
H01L29/12
characterised by the materials of which they are formed
H01L29/12
characterised by the materials of which they are formed
H01L29/20
including, apart from doping materials or other impurities, only AIIIBV compounds
H01L29/20
including, apart from doping materials or other impurities, only AIIIBV compounds