H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/40
Electrodes; ; Multistep manufacturing processes therefor
H01L29/40
Electrodes; ; Multistep manufacturing processes therefor
H01L29/41
characterised by their shape, relative sizes or dispositions
H01L29/41
characterised by their shape, relative sizes or dispositions
H01L29/417
carrying the current to be rectified, amplified or switched
H01L29/417
carrying the current to be rectified, amplified or switched
H01L29/41725
Source or drain electrodes for field effect devices
H01L29/41725
Source or drain electrodes for field effect devices
H01L29/41758
for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
H01L29/41758
for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular