H
ELECTRICITY
H
ELECTRICITY
H01
ELECTRIC ELEMENTS
H01
ELECTRIC ELEMENTS
H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/40
Electrodes; ; Multistep manufacturing processes therefor
H01L29/40
Electrodes; ; Multistep manufacturing processes therefor
H01L29/41
characterised by their shape, relative sizes or dispositions
H01L29/41
characterised by their shape, relative sizes or dispositions
H01L29/417
carrying the current to be rectified, amplified or switched
H01L29/417
carrying the current to be rectified, amplified or switched
H01L29/41725
Source or drain electrodes for field effect devices
H01L29/41725
Source or drain electrodes for field effect devices
H01L29/41791
for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET
H01L29/41791
for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET