One aspect of this disclosure is a power amplifier module that includes a power amplifier, a semiconductor resistor, a tantalum nitride terminated through wafer via, and a conductive layer electrically connected to the power amplifier. The semiconductor resistor can include a resistive layer that includes a same material as a layer of a bipolar transistor of the power amplifier. A portion of the conductive layer can be in the tantalum nitride terminated through wafer via. The conductive layer and the power amplifier can be on opposing sides of a semiconductor substrate. Other embodiments of the module are provided along with related methods and components thereof.

One aspect of this disclosure is a power amplifier system that includes a control interface, a power amplifier, a passive component, and a bias circuit. The power amplifier and the passive component can be on a first die. The bias circuit can be on a second die. The control interface can operate as a serial interface or as a general purpose input/output interface. The power amplifier can be controllable based at least partly on an output signal from the control interface. The bias circuit can generate a bias signal based at least partly on an indication of the electrical property of the passive component. Other embodiments of the system are provided along with related methods and components thereof.

One aspect of this disclosure is a power amplifier system that includes a control interface, a power amplifier, a passive component on a same die as the power amplifier, and a bias circuit on a different die than the power amplifier. The control interface can operate as a serial interface or as a general purpose input/output interface. The power amplifier can be controllable based at least partly on an output signal from the control interface. The bias circuit can generate a bias signal based at least partly on an indication of the electrical property of the passive component. Other embodiments of the system are provided along with related methods and components thereof.

A semiconductor device includes: a semiconductor substrate; a semiconductor layer on the semiconductor substrate; a source electrode and a drain electrode spaced apart from each other on the semiconductor layer; a gate electrode on the semiconductor layer between the source electrode and the drain electrode; and an insulating film covering the semiconductor layer, the source electrode, the drain electrode and the gate electrode, the gate electrode has an eaves structure including a lower electrode joined to the semiconductor layer and an upper electrode provided on the lower electrode and wider than the lower electrode, a principal ingredient of the insulating film is an oxide film where atomic layers are alternately arrayed for each monolayer, and a film thickness of the insulating film that covers the lower electrode of the gate electrode is equal to a film thickness of the insulating film that covers the upper electrode.

A gate electrode (6) is provided on the semiconductor layer (2) and a least includes a lowermost layer (6a) in contact with the semiconductor layer (2), and an upper layer (6b) provided on the lowermost layer (6a). The upper layer (6b) applies stress to the lowermost layer (6a) to cause both edges of the lowermost layer (6a) to curl up from the semiconductor layer (2).

One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 310.sup.16 cm.sup.3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.

A semiconductor device is provided. The semiconductor device includes a substrate; an active layer disposed on the substrate; a via through the active layer; and a plurality of electrodes disposed on the active layer and into the via. Additionally, a package structure that includes the semiconductor device is also provided. The electrode is electrically connected to the substrate through the via.

A low leakage current switch device (110) is provided which includes a GaN-on-Si substrate (11, 13) with one or more device mesas (41) in which isolation regions (92, 93) are formed using an implant mask (81) to implant ions (91) into an upper portion of the mesa sidewalls and the peripheral region around each elevated surface of the mesa structures exposed by the implant mask, thereby preventing the subsequently formed gate electrode (111) from contacting the peripheral edge and sidewalls of the mesa structures.

A gate electrode (6) is provided on the semiconductor layer (2) and a least includes a lowermost layer (6a) in contact with the semiconductor layer (2), and an upper layer (6b) provided on the lowermost layer (6a). The upper layer (6b) applies stress to the lowermost layer (6a) to cause both edges of the lowermost layer (6a) to curl up from the semiconductor layer (2).

One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 310.sup.16 cm.sup.3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.