H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/66
Types of semiconductor device; ; Multistep manufacturing processes therefor
H01L29/66
Types of semiconductor device; ; Multistep manufacturing processes therefor
H01L29/68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/76
Unipolar devices; , e.g. field effect transistors
H01L29/76
Unipolar devices; , e.g. field effect transistors
H01L29/778
with two-dimensional charge carrier gas channel, e.g. HEMT; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
H01L29/778
with two-dimensional charge carrier gas channel, e.g. HEMT; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
H01L29/7786
with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
H01L29/7786
with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT