A reverse conducting power semiconductor device includes a plurality of thyristor cells and a freewheeling diode are integrated in a semiconductor wafer. The freewheeling diode includes a diode anode layer, a diode anode electrode, a diode cathode layer, and a diode cathode electrode. The diode cathode layer includes diode cathode layer segments, each of which is stripe-shaped and arranged within a corresponding stripe-shaped first diode anode layer segment such that a longitudinal main axis of each diode cathode layer segment extends along the longitudinal main axis of the corresponding one of the first diode anode layer segments.

According to an aspect of the present disclosure, a semiconductor device includes a substrate including an IGBT region, and a diode region, a surface electrode provided on a top surface of the substrate and a back surface electrode provided on a back surface on an opposite side to the top surface of the substrate, wherein the diode region includes a first portion formed to be thinner than the IGBT region by the top surface of the substrate being recessed, and a second portion provided on one side of the first portion and thicker than the first portion.

A high-voltage fast-avalanche diode, being a silicon-avalanche shaper or sharpener (SAS), has a thick active region above 300 microns in thickness.

A chip part includes a substrate, an element formed on the substrate, and an electrode formed on the substrate. A recess and/or projection expressing information related to the element is formed at a peripheral edge portion of the substrate.

A semiconductor device includes: an n type semiconductor layer including an active region and an inactive region; an element structure formed in the active region and including at least an active side p type layer to form pn junction with n type portion of the n type semiconductor layer; an inactive side p type layer formed in the inactive region and forming pn junction with the n type portion of the n type semiconductor layer; a first electrode electrically connected to the active side p type layer in a front surface of the n type semiconductor layer; a second electrode electrically connected to the n type portion of the n type semiconductor layer in a rear surface of the n type semiconductor layer; and a crystal defect region formed in both the active region and the inactive region and having different depths in the active region and the inactive region.

A semiconductor device comprises a vertical power device, such as a superjunction MOSFET, an IGBT, a diode, and the like, and a surface device that comprises one or more lateral devices that are electrically active along a top surface of the semiconductor device.

A semiconductor device includes an anode doping region of a diode structure arranged in a semiconductor substrate. The anode doping region has a first conductivity type. The semiconductor device further includes a second conductivity type contact doping region having a second conductivity type. The second conductivity type contact doping region is arranged at a surface of the semiconductor substrate and surrounded in the semiconductor substrate by the anode doping region. The anode doping region includes a buried non-depletable portion. At least part of the buried non-depletable portion is located below the second conductivity type contact doping region in the semiconductor substrate.

A semiconductor device includes first and second pads separated from each other, first and second test elements connected to the first and second pads and connected to each other in parallel between the first and second pads, a first diode connected to the first test element in series, and a second diode connected to the second test element in series.

A semiconductor device includes a semiconductor layer, an electronic element and laterally separated trench isolation structures. The semiconductor layer includes an element region having an inner region, an outer region on opposite sides of the inner region, and a transition region that laterally separates the inner region and the outer region. The electronic element includes a first doped region formed in the inner region and a second doped region formed in the outer region. The trench isolation structures are formed at least in the transition region. Each trench isolation structure extends from a first surface of the semiconductor layer into the semiconductor layer.

A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; a control electrode provided inside a trench of the semiconductor part; a third electrode provided inside the trench; a diode element provided at the front surface of the semiconductor part; a resistance element provided on the front surface of the semiconductor part via an insulating film, the diode element being electrically connected to the second electrode; a first interconnect electrically connecting the diode element and the resistance element, the first interconnect being electrically connected to the third electrode; and a second interconnect electrically connecting the resistance element and the semiconductor part. The resistance element is connected in series to the diode element. The diode element is provided to have a rectifying property reverse to a current direction flowing from the resistance element to the second electrode.