An electronic device includes a substrate having contact pads disposed thereon and traces interconnecting the contact pads. A first integrated circuit (IC) die is mounted on the substrate and includes a predefined set of circuit components arranged on the first IC die in a first geometrical pattern, which is non-symmetrical under reflection about a given axis in a plane of the die. A second IC die is mounted on the substrate and includes the predefined set of circuit components arranged on the second IC die in a second geometrical pattern, which is a mirror image of the first geometrical pattern with respect to the given axis.

A semiconductor device of embodiments includes: a die pad including a first region and a second region surrounding the first region and thinner than the first region; a semiconductor chip including an upper electrode, a lower electrode, and a silicon carbide layer between the upper electrode and the lower electrode and provided on an inner side rather than the second region on a surface of the die pad; and a connection layer for connecting the lower electrode to the surface.

A semiconductor package using a coreless signal distribution structure (CSDS) is disclosed and may include a CSDS comprising at least one dielectric layer, at least one conductive layer, a first surface, and a second surface opposite to the first surface. The semiconductor package may also include a first semiconductor die having a first bond pad on a first die surface, where the first semiconductor die is bonded to the first surface of the CSDS via the first bond pad, and a second semiconductor die having a second bond pad on a second die surface, where the second semiconductor die is bonded to the second surface of the CSDS via the second bond pad. The semiconductor package may further include a metal post electrically coupled to the first surface of the CSDS, and a first encapsulant material encapsulating side surfaces and a surface opposite the first die surface of the first semiconductor die, the metal post, and a portion of the first surface of the CSDS.

A high-frequency amplifier includes a driver amplifier configured to amplify an input high-frequency signal, a Doherty amplifier, including a carrier amplifier and a peak amplifier, and configured to further amplify a signal output from the driver amplifier, a first multilayer substrate, a second multilayer substrate laminated to overlap the first multilayer substrate, and a base member mounted with the first multilayer substrate and the second multilayer substrate, wherein the driver amplifier is mounted on the second multilayer substrate, the carrier amplifier and the peak amplifier are mounted on the first multilayer substrate, the driver amplifier, the carrier amplifier, and the peak amplifier have a front surface forming a predetermined circuit, and a back surface located on an opposite side from the front surface, respectively, the front surface of the driver amplifier opposes the first multilayer substrate, and the back surface of the driver amplifier is separated from the first multilayer substrate, the back surfaces of the carrier amplifier and the peak amplifier both make contact with the base member, respectively, and the back surface of the driver amplifier is connected to an interconnect layer disposed on a surface of the second multilayer substrate, the interconnect layer is connected to one end of a first via penetrating the second multilayer substrate and the first multilayer substrate, and the other end of the first via is connected to the base member.

A semiconductor package using a coreless signal distribution structure (CSDS) is disclosed and may include a CSDS comprising at least one dielectric layer, at least one conductive layer, a first surface, and a second surface opposite to the first surface. The semiconductor package may also include a first semiconductor die having a first bond pad on a first die surface, where the first semiconductor die is bonded to the first surface of the CSDS via the first bond pad, and a second semiconductor die having a second bond pad on a second die surface, where the second semiconductor die is bonded to the second surface of the CSDS via the second bond pad. The semiconductor package may further include a metal post electrically coupled to the first surface of the CSDS, and a first encapsulant material encapsulating side surfaces and a surface opposite the first die surface of the first semiconductor die, the metal post, and a portion of the first surface of the CSDS.

An electronic device includes a substrate having contact pads disposed thereon and traces interconnecting the contact pads. A first integrated circuit (IC) die is mounted on the substrate and includes a predefined set of circuit components arranged on the first IC die in a first geometrical pattern, which is non-symmetrical under reflection about a given axis in a plane of the die. A second IC die is mounted on the substrate and includes the predefined set of circuit components arranged on the second IC die in a second geometrical pattern, which is a mirror image of the first geometrical pattern with respect to the given axis.

Implementations of semiconductor packages may include a substrate, a first die coupled on the substrate, and a lead frame coupled over the substrate. The lead frame may include a die attach pad. Implementations of semiconductor packages may also include a second die coupled on the die attach pad. The second die may overlap the first die.

A semiconductor device structure and a method for making a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a thin fine-pitch redistribution structure.

A module having high reliability in terms of its connection to an external unit is provided. The module includes: a wiring substrate that mounts components and 3b thereon; a substrate electrode formed on one main surface of the wiring substrate; a columnar conductor connected at one end to the substrate electrode; an intermediate coating formed to cover an outer peripheral surface of the columnar conductor; and a first sealing resin layer provided to cover one main surface of the wiring substrate and the intermediate coating. The intermediate coating has a coefficient of linear expansion which is between that of the columnar conductor and that of the first sealing resin layer.

A method embodiment includes forming a patterned first photo resist over a seed layer. A first opening in the patterned first photo resist exposes the seed layer. The method further includes plating a first conductive material in the first opening on the seed layer, removing the patterned first photo resist, and after removing the patterned first photo resist, forming a patterned second photo resist over the first conductive material. A second opening in the patterned second photo resist exposes a portion of the first conductive material. The method further includes plating a second conductive material in the second opening on the first conductive material, removing the patterned second photo resist, and after removing the patterned second photo resist, depositing a dielectric layer around the first conductive material and the second conductive material.