Embodiments may relate to a method of forming a microelectronic package with an integrated heat spreader (IHS). The method may include placing a solder thermal interface material (STIM) layer on a face of a die that is coupled with a package substrate; coupling the IHS with the STIM layer and the package substrate such that the STIM is between the IHS and the die; performing formic acid fluxing of the IHS, STIM layer, and die; and dispensing, subsequent to the formic acid fluxing, sealant on the package substrate around a periphery of the IHS.

Stacked semiconductor die assemblies having memory dies stacked between partitioned logic dies and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a first logic die, a second logic die, and a thermally conductive casing defining an enclosure. The stack of memory dies can be disposed within the enclosure and between the first and second logic dies.

A semiconductor package may include; a first substrate, a first semiconductor chip disposed on the first substrate, an interposer disposed on the first semiconductor chip, a connecter spaced apart from the first semiconductor chip in a first horizontal direction and extending between the first substrate and the interposer, wherein the connecter directly electrically connects the first substrate and the interposer, a capacitor disposed between the connecter and the first semiconductor chip, and a guide pattern including a first guide portion and an opposing second guide portion spaced apart in the first horizontal direction, wherein the first guide portion is disposed between the connecter and the capacitor, the second guide portion is disposed between the capacitor and the first semiconductor chip, and at least part of the capacitor is inserted between the first guide portion and the second guide portion.

Electronic assemblies and methods of assembly are described. In an embodiment, an electronic assembly includes a stiffener structure shear bonded to an opposite side of a module substrate from a ball grid array (BGA) package. The stiffener structure may be shear bonded at elevated temperature after bonding of the BGA package to lock in a flat or near-flat surface contour of the module substrate.

A semiconductor package and a method of manufacturing a semiconductor package. As a non-limiting example, various aspects of this disclosure provide a semiconductor package, and a method of manufacturing thereof, that comprises a first semiconductor die, a plurality of adhesive regions spaced apart from each other on the first semiconductor die, and a second semiconductor die adhered to the plurality of adhesive regions.

A semiconductor package and a method of manufacturing a semiconductor package. As a non-limiting example, various aspects of this disclosure provide a semiconductor package, and a method of manufacturing thereof, that comprises a first semiconductor die, a plurality of adhesive regions spaced apart from each other on the first semiconductor die, and a second semiconductor die adhered to the plurality of adhesive regions.

A semiconductor device including a board having a ground electrode and resin layers and a semiconductor chip mounted on the board, includes: a core embedded inside the board such that a front surface thereof is exposed on the front surface side of the board; a filled via provided so as to penetrate the resin layer disposed between the core and the ground electrode, of the resin layers, and electrically connecting a back surface of the core and the ground electrode; a joining material including a lid provided on the board so as to cover the semiconductor chip, having an exposed front surface, and having a high thermal conductivity and sintered silver joining a back surface of the lid and the front surface of the core; and a mold resin transfer-molded on an entirety of the front surface of the board and provided so as to surround the lid.

Various apparatus and methods are disclosed. In one aspect, a method of manufacturing a thermal interface material on a semiconductor chip is provided. The method includes placing a preform of a combination of a first metal and a second metal on one of the semiconductor chip or a lid. The preform is liquid phase sintered to cause the combination to evolve to an equilibrium composition and bond to the semiconductor chip.

Various apparatus and methods are disclosed. In one aspect, a method of manufacturing a thermal interface material on a semiconductor chip is provided. The method includes placing a preform of a combination of a first metal and a second metal on one of the semiconductor chip or a lid. The preform is liquid phase sintered to cause the combination to evolve to an equilibrium composition and bond to the semiconductor chip.

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.