A disclosed semiconductor device includes a package substrate, a first semiconductor die coupled to the package substrate, a package lid attached to the package substrate and covering the semiconductor die, and a thermal interface material located between a top surface of the semiconductor die and an internal surface of the package lid. The semiconductor device may further include a dam formed on the internal surface of the package lid. The dam may constrain the thermal interface material on one or more sides of the first semiconductor die such that the thermal interface material is located within a predetermined volume between the top surface of the first semiconductor die and the internal surface of the package lid during a reflow operation. The package lid may include a metallic material and the dam may include an epoxy material formed as a single continuous structure or may be formed as several disconnected structures.

Stacked semiconductor die assemblies having memory dies stacked between partitioned logic dies and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a first logic die, a second logic die, and a thermally conductive casing defining an enclosure. The stack of memory dies can be disposed within the enclosure and between the first and second logic dies.

A semiconductor structure includes: a substrate; a package attached to a first surface of the substrate, where the package includes: an interposer, where a first side of the interposer is bonded to the first surface of the substrate through first conductive bumps; dies attached to a second side of the interposer opposing the first side; and a molding material on the second side of the interposer around the dies; a plurality of thermal interface material (TIM) films on a first surface of the package distal from the substrate, where each of the TIM films is disposed directly over at least one respective die of the dies; and a heat-dissipation lid attached to the first surface of the substrate, where the package and the plurality of TIM films are disposed in an enclosed space between the heat-dissipation lid and the substrate, where the heat-dissipation lid contacts the plurality of TIM films.

A semiconductor package includes spread inhibiting structure to constrain the movement of viscous material during fabrication. In some embodiments, the spread inhibiting structure comprises a recess in an underside of a package lid overlying the die. According to other embodiments, the spread inhibiting structure comprises polymer disposed on the lid underside proximate to a side of the packaged die. According to still other embodiments, the spread inhibiting structure comprises a polymer disposed around the top of the die to serve as a dam and contain spreading. In some embodiments, the viscous material may be a Thermal Integration Material (TIM) in an uncured state, and the polymer may be the TIM in a cured state.

A semiconductor device including a board having a ground electrode and resin layers and a semiconductor chip mounted on the board, includes: a core embedded inside the board such that a front surface thereof is exposed on the front surface side of the board; a filled via provided so as to penetrate the resin layer disposed between the core and the ground electrode, of the resin layers, and electrically connecting a back surface of the core and the ground electrode; a joining material including a lid provided on the board so as to cover the semiconductor chip, having an exposed front surface, and having a high thermal conductivity and sintered silver joining a back surface of the lid and the front surface of the core; and a mold resin transfer-molded on an entirety of the front surface of the board and provided so as to surround the lid.

Semiconductor die assemblies and methods of forming the same are described herein. As an example, a semiconductor die assembly may include a thermally conductive casing, a first face of a logic die coupled to the thermally conductive casing to form a thermal path that transfers heat away from the logic die to the thermally conductive casing, a substrate coupled to a second face of the logic die, and a die embedded at least partially in a cavity of the substrate.

A chip package may include: a first die; at least one second die disposed over the first die; and a lid disposed over lateral portions of the first die and at least partially surrounding the at least one second die, the lid having inclined sidewalls spaced apart from and facing the at least one second die.

An electronic apparatus that includes a semiconductor device; an electronic packaging substrate for receiving the semiconductor device; a thermal interface material on the semiconductor device; and a lid in contact with the thermal interface material and having a zone of targeted flexibility spaced from the semiconductor device.

An electronic apparatus that includes a semiconductor device; an electronic packaging substrate for receiving the semiconductor device; a thermal interface material on the semiconductor device; and a lid in contact with the thermal interface material and having a zone of targeted flexibility spaced from the semiconductor device.

A method for manufacturing a semiconductor device is provided, the method including: mounting a first element on a wiring substrate, placing a first heat sink on the first element with a metal material interposed between the first heat sink and the first element, attaching the first heat sink to the first element via the metal material by heating and melting the metal material, and mounting a second element on the wiring substrate after the steps of attaching the first heat sink to the first element.