A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A semiconductor device A1 disclosed includes: a semiconductor element 10 having an element obverse face and element reverse face that face oppositely in a thickness direction z, with an obverse-face electrode 11 (first electrode 111) and a reverse-face electrode 12 respectively formed on the element obverse face and the element reverse face; a conductive member 22A opposing the element reverse face and conductively bonded to the reverse-face electrode 12; a conductive member 22B spaced apart from the conductive member 22A and electrically connected to the obverse-face electrode 11; and a lead member 51 having a lead obverse face 51a facing in the same direction as the element obverse face and connecting the obverse-face electrode 11 and the conductive member 22B. The lead member 51, bonded to the obverse-face electrode 11 via a lead bonding layer 321, includes a protrusion 521 protruding in the thickness direction z from the lead obverse face 51a. The protrusion 521 overlaps with the obverse-face electrode 11 as viewed in the thickness direction z. This configuration suppresses deformation of the connecting member to be pressed during sintering treatment.

An electronic component includes a leadframe and a first semiconductor die. The leadframe includes a leadframe top side, a leadframe bottom side opposite the leadframe top side, and a top notch at the leadframe top side. The top notch includes a top notch base located between the leadframe top side and the leadframe bottom side, and defining a notch length of the top notch, and can also include a top notch first sidewall extended, along the notch length, from the leadframe top side to the top notch base. The first semiconductor die can include a die top side a die bottom side opposite the die top side and mounted onto the leadframe top side, and a die perimeter. The top notch can be located outside the die perimeter. Other examples and related methods are also disclosed herein.

A semiconductor device includes: a first electrode terminal; a second electrode terminal; a semiconductor element having an electrode on one surface connected to one surface of the first electrode terminal; a wire that connects an electrode on the other surface of the semiconductor element and the second electrode terminal; and a resin portion formed of an insulator covering the semiconductor element, a part of the second electrode terminal, and the one surface of the first electrode terminal, wherein a chamfered portion is formed on at least one of end portions where the first electrode terminal and the second electrode terminal face each other.

Implementations of a method of forming semiconductor packages may include: providing a wafer having a plurality of devices, etching one or more trenches on a first side of the wafer between each of the plurality of devices, applying a molding compound to the first side of the wafer to fill the one or more trenches; grinding a second side of the wafer to a desired thickness, and exposing the molding compound included in the one or more trenches. The method may include etching the second side of the wafer to expose a height of the molding compound forming one or more steps extending from the wafer, applying a back metallization to a second side of the wafer, and singulating the wafer at the one or more steps to form a plurality of semiconductor packages. The one or more steps may extend from a base of the back metallization.

A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. An edge of the upper portion is protruded beyond the neck portion, and an edge of the lower portion is protruded beyond the upper portion.

A leadframe having extensions around an outer edge of a die pad are disclosed. More specifically, leadframes are created with a flange formed at the outer edge of the die pad and extending away from the die pad. The flange is bent, such that it is positioned at an angle with respect to the die pad. Leadframes are also created with anchoring posts formed adjacent the outer edge of the die pad and extending away from the die pad. The anchoring posts have a central thickness that is less than a thickness of first and second portions opposite the central portion. When the leadframe is incorporated into a package, molding compound completely surrounds each flange or anchoring post, which increases the bond strength between the leadframe and the molding compound due to increased contact area. The net result is a reduced possibility of delamination at edges of the die pad.

A lead frame includes a support portion that has one end on which a first part and a second part that has a smaller thickness than the first part are arranged, a lead, and a heat sink that is welded to the support portion in the second part. A method of manufacturing the lead frame includes forming, from a metal plate, a frame member that includes a support portion and a lead, where the support portion has one end on which a first part and a second part that has a smaller thickness than the first part are arranged, and welding a heat sink to the support portion in the second part.

A semiconductor device includes: a support member including a main surface facing a thickness direction; a semiconductor element mounted on the main surface; and a bonding layer interposed between the support member and the semiconductor element, wherein the support member is formed with a first protrusion that protrudes from the main surface, and wherein the first protrusion surrounds the semiconductor element when viewed in the thickness direction.

A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the lead frame, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.