H01L2924/19039

Semiconductor structure having multiple dielectric waveguide channels and method for forming semiconductor structure

A method of forming a semiconductor structure is provided. A first inter-level dielectric (ILD) layer is formed overlying a molding layer. The first ILD layer is patterned to form a plurality of first openings. A first lower transmitter electrode and a first lower receiver electrode are formed by depositing a first metal material within the plurality of first openings. A first dielectric waveguide is formed overlying the first ILD layer, the first lower transmitter electrode and the first lower receiver electrode. A second ILD layer is formed overlying the first dielectric waveguide and includes a plurality of second openings. A second lower transmitter electrode and a second lower receiver electrode are formed by depositing a second metal material within the plurality of second openings. A second dielectric waveguide is formed overlying the second ILD layer, the second lower transmitter electrode and the second lower receiver electrode.

Semiconductor device, transmission system, method for manufacturing semiconductor device, and method for manufacturing transmission system
09748664 · 2017-08-29 · ·

Disclosed herein is a semiconductor device including: a semiconductor circuit element configured to process an electrical signal having a predetermined frequency; and a transmission line configured to be connected to the semiconductor circuit element via a wire and transmit the electrical signal. An impedance matching pattern having a symmetric shape with respect to a direction of the transmission line is provided in the transmission line.

SEMICONDUCTOR STRUCTURE HAVING MULTIPLE DIELECTRIC WAVEGUIDE CHANNELS AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
20230268298 · 2023-08-24 ·

A method of forming a semiconductor structure includes: providing a first inter-level dielectric (ILD) layer overlying a molding layer, the molding layer including a transmitter ground structure and a receiver ground structure; forming first openings through the first ILD layer to expose the transmitter and receiver ground structures; forming first lower transmitter and receiver electrodes in the first openings to be respectively coupled to the transmitter and receiver ground structures; forming a first dielectric waveguide overlying the first ILD layer, and first lower transmitter and receiver electrodes; depositing a second ILD layer overlying the first dielectric waveguide; forming second lower transmitter and receiver electrodes extending through the second ILD and respectively coupled to the transmitter and receiver ground structures; and forming a second dielectric waveguide overlying the second ILD layer and the second lower transmitter and receiver electrodes.

Circularly-polarized dielectric waveguide launch for millimeter-wave data communication

A wave communication system includes an integrated circuit and a multilayered substrate. The multilayered substrate is electrically coupled to the integrated circuit. The multilayered substrate includes an antenna structure configured to transmit a circularly polarized wave in response to signals from the integrated circuit.

Electronic package

An electronic package includes an antenna structure and an adjustment structure arranged on a carrier structure. The antenna structure includes an antenna body and a feed line that are disposed on different layers and a conductive pillar that interconnects the layers to electrically connect the antenna body and the feed line. The adjustment structure extends from the feed line to improve the bandwidth of the antenna body.

SEMICONDUCTOR STRUCTURE HAVING MULTIPLE DIELECTRIC WAVEGUIDE CHANNELS AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
20200381377 · 2020-12-03 ·

A method of forming a semiconductor structure is provided. A first inter-level dielectric (ILD) layer is formed overlying a molding layer. The first ILD layer is patterned to form a plurality of first openings. A first lower transmitter electrode and a first lower receiver electrode are formed by depositing a first metal material within the plurality of first openings. A first dielectric waveguide is formed overlying the first ILD layer, the first lower transmitter electrode and the first lower receiver electrode. A second ILD layer is formed overlying the first dielectric waveguide and includes a plurality of second openings. A second lower transmitter electrode and a second lower receiver electrode are formed by depositing a second metal material within the plurality of second openings. A second dielectric waveguide is formed overlying the second ILD layer, the second lower transmitter electrode and the second lower receiver electrode.

Semiconductor structure having multiple dielectric waveguide channels and method for forming semiconductor structure

A semiconductor structure includes a first dielectric waveguide, a second dielectric waveguide, a first inter-level dielectric (ILD) material, a first transmitter coupling structure and a second transmitter coupling structure. The first and second dielectric waveguides are disposed one over the other. The first dielectric waveguide is configured to guide a first electromagnetic signal. The second dielectric waveguide is configured to guide a second electromagnetic signal. The first and second electromagnetic signals have different frequencies. The first ILD material is disposed between the first and second dielectric waveguides. The first transmitter coupling structure is configured to couple a first driver signal generated by a transmitter die to the first dielectric waveguide, and accordingly produce the first electromagnetic signal. The second transmitter coupling structure is configured to couple a second driver signal generated by the transmitter die to the second dielectric waveguide, and accordingly produce the second electromagnetic signal.

SEMICONDUCTOR STRUCTURE HAVING MULTIPLE DIELECTRIC WAVEGUIDE CHANNELS AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
20190393171 · 2019-12-26 ·

A semiconductor structure includes a first dielectric waveguide, a second dielectric waveguide, a first inter-level dielectric (ILD) material, a first transmitter coupling structure and a second transmitter coupling structure. The first and second dielectric waveguides are disposed one over the other. The first dielectric waveguide is configured to guide a first electromagnetic signal. The second dielectric waveguide is configured to guide a second electromagnetic signal. The first and second electromagnetic signals have different frequencies. The first ILD material is disposed between the first and second dielectric waveguides. The first transmitter coupling structure is configured to couple a first driver signal generated by a transmitter die to the first dielectric waveguide, and accordingly produce the first electromagnetic signal. The second transmitter coupling structure is configured to couple a second driver signal generated by the transmitter die to the second dielectric waveguide, and accordingly produce the second electromagnetic signal.

ELECTRONIC PACKAGE
20190363423 · 2019-11-28 ·

An electronic package includes an antenna structure and an adjustment structure arranged on a carrier structure. The antenna structure includes an antenna body and a feed line that are disposed on different layers and a conductive pillar that interconnects the layers to electrically connect the antenna body and the feed line. The adjustment structure extends from the feed line to improve the bandwidth of the antenna body.

CIRCULARLY-POLARIZED DIELECTRIC WAVEGUIDE LAUNCH FOR MILLIMETER-WAVE DATA COMMUNICATION

A wave communication system includes an integrated circuit and a multilayered substrate. The multilayered substrate is electrically coupled to the integrated circuit. The multilayered substrate includes an antenna structure configured to transmit a circularly polarized wave in response to signals from the integrated circuit.