Patent classifications
H01L2924/40503
Flip-chip bonding apparatus using VCSEL device
Provided is a flip-chip bonding apparatus using VCSEL device, and more particularly, to a flip-chip bonding apparatus using VCSEL device for bonding a flip-chip type semiconductor chip to a substrate using infrared laser light generated from the VCSEL device. The flip-chip bonding apparatus using VCSEL device may quickly control laser light to bond a semiconductor chip to a substrate, with high productivity and high quality.
Semiconductor manufacturing apparatus, and method of manufacturing semiconductor device
In one embodiment, a semiconductor manufacturing apparatus includes a reformer configured to partially reform a first substrate to form a reformed layer between a first portion and a second portion in the first substrate. The apparatus further includes a joiner configured to form a joining layer between the first portion and a second substrate to join the first portion and the second substrate. The apparatus further includes a remover configured to remove the second portion from a surface of the second substrate while making the first portion remain on the surface of the second substrate by separating the first portion and the second portion.
SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
In one embodiment, a semiconductor manufacturing apparatus includes a reformer configured to partially reform a first substrate to form a reformed layer between a first portion and a second portion in the first substrate. The apparatus further includes a joiner configured to form a joining layer between the first portion and a second substrate to join the first portion and the second substrate. The apparatus further includes a remover configured to remove the second portion from a surface of the second substrate while making the first portion remain on the surface of the second substrate by separating the first portion and the second portion.
DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A display device includes a drive circuit on an insulating substrate; a connecting electrode electrically connected to the drive circuit; an LED element electrically connected to the drive circuit via the connecting electrode, and a first light reflecting layer overlapping the LED element and having an inclined surface. The inclined surface reflects light incident on the inclined surface through the LED element toward the connecting electrode. The first light reflecting layer may have a reflectance of 90 percent or more for light at a wavelength of 1.0 μm or more to 1.5 μm or less.
FLIP-CHIP BONDING APPARATUS USING VCSEL DEVICE
Provided is a flip-chip bonding apparatus using VCSEL device, and more particularly, to a flip-chip bonding apparatus using VCSEL device for bonding a flip-chip type semiconductor chip to a substrate using infrared laser light generated from the VCSEL device. The flip-chip bonding apparatus using VCSEL device may quickly control laser light to bond a semiconductor chip to a substrate, with high productivity and high quality.
SEMICONDUCTOR DEVICE AND CORRESPONDING METHOD OF MANUFACTURE
Disclosed herein is a method, including attaching a semiconductor chip to a chip mounting portion on at least one leadframe portion, and attaching a passive component on a passive component mounting portion of the at least one leadframe portion. The method further includes forming a laser direct structuring (LDS) activatable molding material over the semiconductor chip, passive component, and the at least one leadframe portion. Desired patterns of structured areas are formed within the LDS activatable molding material by activating the LDS activatable molding material. The desired patterns of structured areas are metallized to form conductive areas within the LDS activatable molding material to thereby form electrical connection between the semiconductor chip and the passive component. A passivation layer is formed on the LDS activatable molding material.
Optical package structure, optical module, and method for manufacturing the same
An optical package structure includes a substrate having a first surface, an interposer bonded to the first surface through a bonding layer, the interposer having a first area from a top view perspective, and an optical device on the interposer, having a second area from the top view perspective, the first area being greater than the second area. A method for manufacturing the optical package structure is also provided.
OPTICAL PACKAGE STRUCTURE, OPTICAL MODULE, AND METHOD FOR MANUFACTURING THE SAME
An optical package structure includes a substrate having a first surface, an interposer bonded to the first surface through a bonding layer, the interposer having a first area from a top view perspective, and an optical device on the interposer, having a second area from the top view perspective, the first area being greater than the second area. A method for manufacturing the optical package structure is also provided.
Semiconductor device and corresponding method of manufacture
Disclosed herein is a method, including attaching a semiconductor chip to a chip mounting portion on at least one leadframe portion, and attaching a passive component on a passive component mounting portion of the at least one leadframe portion. The method further includes forming a laser direct structuring (LDS) activatable molding material over the semiconductor chip, passive component, and the at least one leadframe portion. Desired patterns of structured areas are formed within the LDS activatable molding material by activating the LDS activatable molding material. The desired patterns of structured areas are metallized to form conductive areas within the LDS activatable molding material to thereby form electrical connection between the semiconductor chip and the passive component. A passivation layer is formed on the LDS activatable molding material.
FINE-GRAIN INTEGRATION OF GROUP III-V DEVICES
Methods of selectively transferring integrated circuit (IC) components between substrates, and devices and systems formed using the same, are disclosed herein. In one embodiment, a first substrate with a release layer and a layer of IC components over the release layer is received, and a second substrate with one or more adhesive areas is received. The layer of IC components may include one or more transistors that contain one or more group III-V materials. The first substrate is partially bonded to the second substrate, such that a subset of IC components on the first substrate are bonded to the adhesive areas on the second substrate. The first substrate is then separated from the second substrate, and the subset of IC components bonded to the second substrate are separated from the first substrate and remain on the second substrate.