A display apparatus includes: a light-emitting device layer provided to extend over a plurality of pixels arranged two-dimensionally; a phosphor layer separated by a partition wall for each of the pixels; and a bonding structure sandwiched between the light-emitting device layer and the phosphor layer, and in which a first oxidation film, a bonding oxidation film, and a second oxidation film are stacked in order from the light-emitting device layer side.

A method of manufacturing an optoelectronic device, including the steps of: forming, on a first surface of a first including assemblies of electronic components, a stack of insulating layers and of conductive tracks; forming, on another wafer, light-emitting diodes each comprising ends; forming a metal layer on at least a portion of the surface of the first wafer and another metal layer on at least a portion of the surface of the second wafer, the other metal layer being electrically coupled to the end of each light-emitting diode; placing into contact the metal layers; forming an insulated conductive via connecting another surface of the wafer to a conductive track; and forming insulated conductive trenches surrounding diodes.

A manufacturing method of a light-emitting device, including the steps of: preparing a substrate including a base, a first wall formed on an upper surface of the base, and a recess defined by a lateral surface of the first wall as an inside lateral surface and the upper surface of the base as a bottom surface; mounting a light-emitting element on the bottom surface of the recess; disposing a sealing member which covers the light-emitting element and the first wall; forming a groove section extending from an upper surface of the sealing member to the first wall by removing the sealing member on the first wall; disposing a second wall inside the groove section; and cutting the second wall and the substrate at a position including the second wall.

Alighting apparatus can include a light emitting element that can irradiate light, and an optical conversion layer disposed on the light emitting element for converting the irradiated light. The optical conversion layer can include crystal grains of a first phosphor and crystal grains of a second phosphor, and the crystal grains of the first phosphor and the crystal grains of the second phosphor can be in mixed form in the optical conversion layer.

A display device may include: a substrate including a display area including a pixel area, and a non-display area including a pad area and located at at least one side of the display area; a pixel in the pixel area, the pixel including an emission area in which at least one light emitting element is located, and a non-emission area adjacent to the emission area; a pad in the pad area, the pad being electrically connected to the pixel; a first layer on the light emitting element at the pixel area; and a second layer in the pixel area and the pad area, the second layer including a pad opening formed exposing at least a portion of the pad. The first layer may include an organic layer including a hollow particle. The first layer may be spaced from the pad opening and covered with the second layer.

A light-emitting device includes a light-emitting element, a light-transmissive member having an upper surface in a rectangular shape and a lower surface to be bonded to the light-emitting element, and a covering member disposed to cover lateral surfaces of the light-transmissive member and lateral surfaces of the light-emitting element such that the upper surface of the light-transmissive member is exposed. The light-transmissive member includes a main portion that constitutes the upper surface in the rectangular shape and a peripheral portion that is positioned around the main portion and has a smaller thickness than the main portion. In lateral surfaces of the peripheral portion, recesses are formed each of which is positioned at a location of a corresponding one of corners of the rectangular shape, and is depressed toward the main portion.

Disclosed is a conversion element (1) comprising an active region (13) that is formed by a semiconductor material and includes a plurality of barriers (131) and quantum troughs (132), a plurality of first structural elements (14) on a top face (la) of the conversion element (1), and a plurality of second structural elements (15) and/or third structural elements (16) which are arranged on a face of the active region (13) facing away from the plurality of first structural elements (14). Also disclosed is a method for producing a conversion element of said type.

A color display device includes a matrix of light sources, each light source comprising a single micro-light-emitting diode, the light sources being of three different colors, each color pixel of the matrix comprising three sources emitting in the three different colors. In the device, the matrix is formed by a group of elementary components of identical shape, each elementary component comprising at least two light-emitting diodes emitting in one of the three spectral bands—the shape of the light-emitting diodes being either a triangle, or a quadrilateral, or a pentagon—the elementary components being assembled in threes such that their respective diodes touch one another by one of their sides, the group formed by the three sources associated with the three diodes forming a color pixel.

Quantum dot polymer composites for on-chip light emitting diode applications are described. In an example, a composite for on-chip light emitting diode application includes a polymer matrix, a plurality of quantum dots dispersed in the polymer matrix, and a base dispersed in the polymer matrix.

An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. The semiconductor component further includes a first conversion layer located on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and a second conversion layer located on the radiation emission surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range. The first conversion layer is different from the second conversion layer.