The disclosure provides a display device and a manufacturing method thereof. The display device includes a substrate, a spacer layer, a light emitting element, and an optical layer. The spacer layer is disposed on the substrate and includes openings. The light emitting element and the optical layer are disposed in the opening.

A light-emitting device includes a semiconductor diode structure, a surface-lattice-mode (SLR) structure against the back of the diode structure, and a reflector against the back of the SLR structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength λ.sub.0 to propagate within the diode structure. The SLR structure includes an index-matched layer, a lower-index layer, and scattering elements, and is in near-field proximity to the active layer relative to λ.sub.0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The scattering elements redirect output light propagating within the device, including in laterally propagating surface-lattice-resonance modes supported by the SLR structure, to propagate perpendicularly toward the device exit surface.

A display panel includes a display module and a lens layer. The display module has a display region and includes a plurality of pixel units disposed in the display region and distributed in an array, each pixel unit is configured to emit light. The lens layer is disposed on a display side of the display module. Light emitted by the plurality pixel units passes through the lens layer to form a display image, and the display image includes a plurality of pixels distributed in an array. The number of pixel units included in a row of pixel units in a first direction is less than the number of pixels included in a row of pixels in the first direction. A first pixel distance is smaller than a first pixel unit distance.

In an embodiment an optical component includes an optical body at least partially translucent to visible light and a coating directly arranged at the optical body, wherein the coating has a reflection coefficient of at least 0.8 for at least one wavelength range in a range from 380 nm to 1500 nm and an average thickness between 10 μm and 200 μm inclusive, wherein the coating has a polysiloxane as base material, and wherein the polysiloxane comprises —SiO.sub.3/2 units.

A black matrix substrate assembly including a transparent substrate, a black matrix pattern, a transparent resin layer, a resin wall pattern, a light reflective layer, and a transparent protective layer. The black matrix pattern includes first and second black linear segments with a width Ax of each first segment in a first direction. The resin wall pattern includes first and second wall linear segments with a width Dx of each first segment smaller than the width Ax in the first direction and the center line of each first segment aligned with that of the corresponding first black linear segment. The light reflective layer includes first and second reflective linear segments with a width Cx of each first segment larger than the width Dx in the first direction and the center line of each first segment aligned with that of the corresponding first black linear segment.

A light-emitting device includes a semiconductor diode structure, a quasi-guided-mode (QGM) structure against the back of the diode structure, and a reflector against the back of the QGM structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength λ.sub.0 to propagate within the diode structure. The QGM structure includes a waveguide layer, a cladding layer, and scattering elements, and is in near-field proximity to the active layer relative to λ.sub.0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The scattering elements redirect output light propagating within the device, including in laterally propagating quasi-guided modes supported by the QGM structure, to propagate perpendicularly toward the device exit surface.

A method for manufacturing a light emitting module includes: providing a light source including a first surface having a pair of electrodes, and a second surface; providing a light guide plate including a first main surface and a second main surface, the light guide plate defining a through-hole extending through the light guide plate from the first main surface to the second main surface, the through-hole having a first penetration portion disposed on a first main surface side, a second penetration portion disposed on a second main surface side, and an intermediate penetration portion connecting the first penetration portion and the second penetration portion, the intermediate penetration portion being narrower in width than the second surface of the light source; and disposing the light source in the second penetration portion of the light guide plate with a joining member being interposed between the light source and the light guide plate.

A manufacturing method of a light-emitting device, including the steps of: preparing a substrate including a base, a first wall formed on an upper surface of the base, and a recess defined by a lateral surface of the first wall as an inside lateral surface and the upper surface of the base as a bottom surface; mounting a light-emitting element on the bottom surface of the recess; disposing a sealing member which covers the light-emitting element and the first wall; forming a groove section extending from an upper surface of the sealing member to the first wall by removing the sealing member on the first wall; disposing a second wall inside the groove section; and cutting the second wall and the substrate at a position including the second wall.

A light emitting device, includes: a substrate; a light emitting element on the substrate, the light emitting element having a first end portion and a second end portion arranged in a longitudinal direction; one or more partition walls disposed on the substrate, the one or more partition walls being spaced apart from the light emitting element; a first reflection electrode adjacent the first end portion of the light emitting element; a second reflection electrode adjacent the second end portion of the light emitting element; a first contact electrode connected to the first reflection electrode and the first end portion of the light emitting element; an insulating layer on the first contact electrode, the insulating layer having an opening exposing the second end portion of the light emitting element and the second reflection electrode to the outside; and a second contact electrode on the insulating layer.

The present disclosure provides a light emitting device including a substrate, a conductive layer, first and second reflective layers, a light emitting element, and an encapsulation layer. The conductive layer is disposed on the substrate. The first reflective layer covers the conductive layer and has an opening exposing a portion of the conductive layer. The light emitting element is disposed in the opening and electrically connects to the conductive layer. The second reflective layer is disposed on the first reflective layer and surrounds the light emitting element, and the second reflective layer has an outer diameter. The encapsulation layer covers the light emitting element. There is a height between a highest point of the encapsulation layer and an upper surface of the first reflective layer, and the height is 0.1 to 0.5 times the outer diameter. The present disclosure also provides a backlight and a display panel.