Provided is a photodetector including: a photodetection element; a reset circuit that sets one end of the photodetection element to an initialization voltage after the photodetection element detects light, and that includes a variable current source capable of varying a current to be supplied to the one end of the photodetection element; and a control circuit that stepwise or continuously increases a current to be supplied to the one end of the photodetection element by using the variable current source until the one end of the photodetection element is set to the initialization voltage after the photodetection element detects light.

A sensing pixel includes a single photon avalanche diode (SPAD) coupled between a first node and a second node, with a clamp diode being coupled between a turn-off voltage node and the second node. A turn-off circuit includes a sense circuit configured to generate a feedback voltage based upon a voltage at the turn-off voltage node, a transistor having a first conduction terminal coupled to the turn-off voltage node, a second conduction terminal coupled to ground, and a control terminal, and an amplifier having a first input coupled to a reference voltage, a second input coupled to receive the feedback voltage, and an output coupled to the control terminal of the transistor. A readout circuit is coupled to the SPAD by a decoupling capacitor.

This disclosure is directed to a high-speed avalanche photodiode device configured to detect single photons. The avalanche photodiode device may include a passive quenching circuitry. The passive quenching circuitry may include a quenching resistor having a resistivity spontaneously adaptive to a bias voltage applied across the quenching resistor. Such adaptive resistivity enables a fast response time for the avalanche photodiode device when used to detect single photos in Geiger mode.

Described is a Single-Photon Avalanche Diode (SPAD) array microchip comprising: a plurality of SPAD sensors; and a triggering circuit configured to detect and read out the triggering order of SPAD sensors over a timing interval wherein the timing interval comprises one or more frames. An event based neuromorphic SPAD array microchip is also described. The chip architecture and triggering methodology takes a local group of SPAD sensors connected in a certain way and by using simple digital circuits emulating how neurons behave, patterns within a local receptive field are identified. Only when these unique patterns or features are identified are “events” triggered for each receptive field in the order they occur, or in an asynchronous manner. Each neuromorphic circuit (or collection of silicon neurons) act over overlapping receptive fields, and are tiled across the entire visual spatial field of the SPAD array to a form a convolution layer.

A multispectral sensor array can include a combination of ranging sensor channels (e.g., LIDAR sensor channels) and ambient-light sensor channels tuned to detect ambient light having a channel-specific property (e.g., color). The sensor channels can be arranged and spaced to provide multispectral images of a field of view in which the multispectral images from different sensors are inherently aligned with each other to define an array of multispectral image pixels. Various optical elements can be provided to facilitate imaging operations. Light ranging/imaging systems incorporating multispectral sensor arrays can operate in rotating and/or static modes.

A method of building a moving average histogram of photon times of arrival includes, for each time interval in first and second subsets of time intervals, latching a time reference corresponding to a time of receipt of an avalanche timing output signal of a single-photon avalanche diode (SPAD), and advancing a count stored at a memory address corresponding to the latched time reference. The memory address corresponds to a range of time references. The method further includes reading and clearing a first set of counts after the first subset of time intervals; phase-shifting the sequence of time references with respect to a set of memory addresses after the first subset of time intervals; reading and clearing a second set of counts after the second subset of time intervals; and building the moving average histogram using at least the first and second sets of counts.

An integrated semiconductor optoelectronic component for sensing ambient light levels includes a silicon photomultiplier configured to deliver an output signal indicative of the intensity of the light that irradiates the component. The silicon photomultiplier has an active surface area for light detection. The component also includes an optical filter covering the active surface area of the silicon photomultiplier. The optical filter is adapted to selectively transmit light onto the active surface area as a function of wavelength. The optical filter is a scotopic filter and has a spectral transmission curve that mimics the spectral response of the human eye under low-light conditions. The component further includes readout electronics for processing the output signal of the silicon photomultiplier.

An object is to obtain accurate distance image data by denoising. Another object is to realize distance image data acquisition in a short time by reducing the frequency of accumulating. A distance image processing system including a solid-state imaging element that can be used for three-dimensionally recognizing an object is provided for the utilization of autonomous driving of passenger cars, for example. Image processing including distance information obtained by a TOF system solid-state imaging element, a so-called TOF camera, is performed by utilizing deep learning. A high-accurate distance image with noise reduced by deep learning can be obtained.

The disclosed semiconductor device includes a region provided with a plurality of circuit blocks each including an avalanche photodiode. A part of the plurality of circuit blocks is a pixel circuit further including a first control circuit configured to control the avalanche photodiode to a standby state in which an avalanche multiplication is possible and a recharging state in which the avalanche photodiode is returned to a state in which the avalanche multiplication is possible after the avalanche multiplication occurs, in response to the first control signal, and another part of the plurality of circuit blocks is a signal generation circuit configured to generate a signal corresponding to a waveform of the first control signal. The signal generation circuit is configured not to output a signal corresponding to the output of the avalanche photodiode.

A photoelectric conversion apparatus includes a plurality of pixels each including a respective avalanche photodiode, wherein the plurality of pixels includes an active pixel that outputs a photon detection signal according to detection of a photon and an inactive pixel that does not output the photon detection signal, and wherein the photoelectric conversion apparatus further includes a control unit that recharges a voltage to be applied between an anode and a cathode of the avalanche photodiode of the inactive pixel.