An image sensor with embedded wells for accommodating light emitters includes a semiconductor substrate including an array of doped sensing regions respectively corresponding to an array of photosensitive pixels of the image sensor. The semiconductor substrate forms an array of wells. Each well is aligned with a respective doped sensing region to facilitate detection, by the photosensitive pixel that includes said respective doped sensing region, of light emitted to the photosensitive pixel by a light emitter disposed in the well. The image sensor further includes, between adjacent doped sensing regions, a light-blocking barrier to reduce propagation of light to the doped sensing-region of each photosensitive pixel from wells not aligned therewith.

A structure includes: a near infrared transmitting filter that shields light in a visible range and allows transmission of at least a part of light in a near infrared range; and a member that is provided on an optical path of the near infrared transmitting filter on at least one of an incidence side into the near infrared transmitting filter or an emission side from the near infrared transmitting filter, allows transmission of light in a near infrared range, and has a refractive index of 1.7 or higher for the light in the near infrared range.

The present disclosure relates to a method for manufacturing thin, efficient, and aesthetically pleasing PV modules having masked or non-shiny interconnects. The method involves a step of applying a masking material over interconnects that are used for electrically connecting PV cells associated with the PV module. The masking material is in form or a strip or ribbon or paste adapted to be attached or applied over the interconnects, which saves the material and also restricts shining of the interconnects. Further, a clear glass superstrate is attached on top of the masked PV cells, and another glass substrate or polymer backsheet is attached to bottom of the masked PV cells. The masking material used is a chemical or radiation stable material, same as the material used for manufacturing the PV module, which restricts deterioration due to chemical reactions or UV light exposure.

Light detection devices and related methods are provided. The devices may comprise a reaction structure for containing a reaction solution with a relatively high or low pH and a plurality of reaction sites that generate light emissions. The devices may comprise a device base comprising a plurality of light sensors, device circuitry coupled to the light sensors, and a plurality of light guides that block excitation light but permit the light emissions to pass to a light sensor. The device base may also include a shield layer extending about each light guide between each light guide and the device circuitry, and a protection layer that is chemically inert with respect to the reaction solution extending about each light guide between each light guide and the shield layer. The protection layer prevents reaction solution that passes through the reaction structure and the light guide from interacting with the device circuitry.

The present technology relates to a light receiving element and a ranging module that can improve characteristics. A light receiving element includes: light receiving regions each including a first voltage application unit to which a first voltage is applied, a first charge detection unit provided around the first voltage application unit, a second voltage application unit to which a second voltage different from the first voltage is applied, and a second charge detection unit provided around the second voltage application unit; and an isolation portion that is arranged at a boundary between the light receiving regions adjacent to each other, and isolates the light receiving regions from each other. The present technology can be applied to a light receiving element.

A High Energy Beam Processing (HEBP) system provides feedback signal monitoring and feedback control for the improvement of process repeatability and three-dimensional (3D) printed part quality. Signals reflecting process parameters and the quality of the fabricated parts are analyzed by monitoring feedback signals from artifact sources with a process controller which adjusts process parameters. In this manner, fabricated parts are produced more accurately and consistently from powder feedstock by compensating for process variation in response to feedback signals.

The present application discloses a sensor device and a display device. The sensor device includes a substrate, a light control component, a touch control component, and a functional dielectric layer, wherein the light control component and the touch component are disposed on the substrate, the touch component is disposed on the light control component, and the functional dielectric layer is disposed on a side of the touch control component away from the substrate and at least covers the touch control component, and configured to apply an electrostatic force to an external object when the external object is in contact with the functional dielectric layer.

In a graphene photodetector, in which a graphene film is electrically connected a first electrode and to a second electrode, the first electrode and the second electrode are formed of the same conductive material, and the first electrode and the second electrode have an asymmetric structure in interface regions with the graphene film.

A three-dimensional image element and an optical radar device that have low cost and are capable of detecting a distance to a measurement object at a close distance before a final result of counting the number of pulses is acquired are realized. A pixel storage element has a plurality of binary counters that integrate the number of electrical pulses at mutually different timings and the reading of data by a signal processing circuit and the integration are able to be performed in parallel.

Provided is a radioisotope battery. A radioisotope battery according to exemplary embodiments may include: a substrate; a shield layer disposed on the substrate and including a first material; a source layer embedded in the shield layer and including a second material which is a radioisotope of the first material; a PN junction layer on the shield layer and the source layer; and a window layer between the PN junction layer and the source layer.