The present disclosure relates to a reflective device and a display apparatus. In one embodiment, a reflective device includes: a resonant cavity configured to reflect a light of a first wavelength range; and a light conversion structure disposed within the resonant cavity and configured to convert an incident light of a second wavelength range into the light of the first wavelength range.

A semiconductor optical sensor (1) is provided with: a substrate (2) integrating a plurality of photodetector active areas (4); and a CMOS layer stack (6) arranged on the substrate (2) and including a number of dielectric (6a) and conductive (6b) layers. UV conversion regions (10) are arranged above a number of first photodetector active areas (4) to convert UV light radiation into visible light radiation towards the first photodetector active areas (4), so that the first photodetector active areas (4) are designed to detect UV light radiation. In particular, the first photodetector active areas (4) are alternated to a number of second photodetector active areas (4), designed to detect visible light radiation, in an array (15) of photodetection units (16) of the optical sensor (1), defining a single image detection area (15′), sensitive to both UV and visible light radiation with a same spatial resolution.

A radiation detector includes a substrate, a plurality of device sections each disposed separately from the substrate and each including a photoelectric conversion device, a buried layer formed in a region between the device sections, and a wavelength conversion layer that is formed on the plurality of device sections and converts entered radiation into light. Any of the device sections includes a first surface that faces the wavelength conversion layer, and a second surface that faces the substrate, and an upper end of the buried layer is disposed at a position higher than the second surface of the any of the device sections.

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

Disubstituted diaryloxybenzoheterodiazole compound of general formula (I): ##STR00001##
in which: Z represents a sulfur atom, an oxygen atom, a selenium atom; or an NR.sub.5 group in which R.sub.5 is selected from linear or branched C.sub.1-C.sub.20, or from optionally substituted aryl groups; R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are as defined in the claims. The disubstituted diaryloxybenzoheterodiazole compound of general formula (I) can advantageously be used as a spectrum converter in luminescent solar concentrators (LSCs) which are in turn capable of improving the performance of photovoltaic devices (or solar devices) selected, for example, from photovoltaic cells (or solar cells), photovoltaic modules (or solar modules) on either a rigid substrate or a flexible substrate.

A neutron beam detecting device according to the invention includes: a first solar cell-type detector that is provided with, on a surface thereof, a conversion film for converting neutrons into photons or any charged particle beam among alpha particles, protons, lithium nuclei, gamma rays or beta rays, and generates a current in response to incident radiation; a radiation detector that generates a current insensitive to neutrons as an output signal in response to the radiation incident; a current measuring device that detects, as signals, the current generated by the first solar cell-type detector and the current generated by the radiation detector in response to the incident radiation; and a flux calculating unit that compares the current signals from the detectors which are detected by the current measuring device. The flux calculating unit associates the detected current signals from the solar cell-type detector and the radiation detector with a relation between a flux of incident radiation of a predetermined type obtained in advance and the detected currents from the solar cell-type detector and the radiation detector, and calculates a flux of a neutron beam.

A sensor module that may include optics and a sensor located downstream to the optics. The optics may include a self-assembling polymer and luminescent elements embedded in the self-assembling polymer.

Disclosed are a solar cell and a solar cell module comprising same, the solar cell comprising: a solar cell structure having one or more hollows passing therethrough in the height direction, and a plurality of light-concentrating parts disposed in each of the one or more hollows.

The invention relates to a method for producing a plurality of optoelectronic semiconductor components, including the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.

Provided is a light-emitting element with high external quantum efficiency and a low drive voltage. The light-emitting element includes a light-emitting layer which contains a phosphorescent compound and a material exhibiting thermally activated delayed fluorescence between a pair of electrodes, wherein a peak of a fluorescence spectrum and/or a peak of a phosphorescence spectrum of the material exhibiting thermally activated delayed fluorescence overlap(s) with a lowest-energy-side absorption band in an absorption spectrum of the phosphorescent compound, and wherein the phosphorescent compound exhibits phosphorescence in the light-emitting layer by voltage application between the pair of electrodes.