There are provided a photoelectric conversion film containing a quantum dot of a compound semiconductor that contains an Ag element, at least one element selected from an Sb element or a Bi element, and at least one element selected from an Se element or a Te element; a dispersion liquid that is used in the formation of the photoelectric conversion film; a photodetector element including the photoelectric conversion film; and an image sensor including the photodetector element.

A solid-state component responds to electromagnetic radiation and may be used as a photovoltaic element, as a photoelectric sensor, as a photocatalyst, or as a power store. The solid-state component has asymmetrical electrodes which face each other and are electron-conductively connected to each other by a semiconductor material and a coating in such a way that an open terminal voltage of 1.8 volts or even more is achieved by acting electromagnetic radiation.

A solid-state component responds to electromagnetic radiation and may be used as a photovoltaic element, as a photoelectric sensor, as a photocatalyst, or as a power store. The solid-state component has asymmetrical electrodes which face each other and are electron-conductively connected to each other by a semiconductor material and a coating in such a way that an open terminal voltage of 1.8 volts or even more is achieved by acting electromagnetic radiation.

A porous carbon material composite formed of a porous carbon material and a functional material and equipped with high functionality. The porous carbon material composite is formed of (A) a porous carbon material obtainable from a plant-derived material having a silicon (Si) content of 5 wt % or higher as a raw material; and (B) a functional material adhered on the porous carbon material, and has a specific surface area of 10 m.sup.2/g or greater as determined by the nitrogen BET method and a pore volume of 0.1 cm.sup.3/g or greater as determined by the BJH method and MP method.

A porous carbon material composite formed of a porous carbon material and a functional material and equipped with high functionality. The porous carbon material composite is formed of (A) a porous carbon material obtainable from a plant-derived material having a silicon (Si) content of 5 wt % or higher as a raw material; and (B) a functional material adhered on the porous carbon material, and has a specific surface area of 10 m.sup.2/g or greater as determined by the nitrogen BET method and a pore volume of 0.1 cm.sup.3/g or greater as determined by the BJH method and MP method.

A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the first electrode and the photoelectric conversion layer. At least one electrode selected from the group consisting of the first electrode and the second electrode has a light-transmitting property. The photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a divalent cation, and a halogen anion. The electron transport layer contains a metal oxynitride having electron conductivity. The metal oxynitride has an electrical conductivity of greater than or equal to 1×10.sup.−7 S/cm.

A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the first electrode and the photoelectric conversion layer. At least one electrode selected from the group consisting of the first electrode and the second electrode has a light-transmitting property. The photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a divalent cation, and a halogen anion. The electron transport layer contains a metal oxynitride having electron conductivity. The metal oxynitride has an electrical conductivity of greater than or equal to 1×10.sup.−7 S/cm.

Methods and devices for detecting incident radiation, such as incident X-rays, gamma-rays, and/or alpha particle radiation are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds, including solid solutions, having the formula AB.sub.2X.sub.5, where A represents Tl or In, B represents Sn or Pb, and X represents Br or I, as photoelectric materials.

Methods and devices for detecting incident radiation, such as incident X-rays, gamma-rays, and/or alpha particle radiation are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds, including solid solutions, having the formula AB.sub.2X.sub.5, where A represents Tl or In, B represents Sn or Pb, and X represents Br or I, as photoelectric materials.

The present invention provides a photosensitive element, and a preparation method and a display device thereof. The photosensitive element includes a substrate; a first electrode arranged on the substrate; an N-type doped silicon layer arranged on the first electrode; an undoped silicon layer arranged on the N-type doped silicon layer; a molybdenum oxide layer arranged on the undoped silicon layer; an insulating layer arranged on the molybdenum oxide layer and the substrate, wherein a first opening is arranged on the insulating layer to expose the molybdenum oxide layer; and a second electrode arranged on the insulating layer and the molybdenum oxide layer, wherein the second electrode contacts the molybdenum oxide layer through the first opening.