A photoconductive transducer intended to generate or detect waves in the terahertz frequency domain or in the picosecond pulse domain is provided. The transducer comprises a three-dimensional structure that includes, in this order, a first planar electrode, an array of nano-columns embedded in a layer of resist and a second planar electrode parallel to the first planar electrode. The design of the transducer increases the optical-to-terahertz conversion efficiency by means of photonic and plasmonic resonances and by means of high and homogeneous electric fields. The height of the nano-columns as well as the thickness of the resist range between 100 nanometres and 400 nanometres. The width of the nano-columns is between 100 nanometres and 400 nanometres, the distance between two adjacent nano-columns is between 300 nanometres and 500 nanometres, the nano-columns are made of a III-V semiconductor. The second electrode is transparent, so as to allow the transmission of a laser source towards the photo-absorbing nano-columns.

A semiconductor wafer is as wide as the industry standard width A (presently 156 mm+/−1 mm) and is longer than the industry standard A by at least 1 mm and as much as the standard equipment can reasonably accommodate, presently approximately 3-20 mm and potentially longer, thus, gaining significant additional surface area for sunlight absorption. Modules may be composed of a plurality of such larger wafers. Such wafers can be processed in conventional processing equipment that has a wafer retaining portion of industry standard size A and a configuration that also accommodates a wafer with a perpendicular second edge longer than A by at least 1 and typically 3-20 mm. Wet bench carriers and transport and inspection stations can be so used.

A semiconductor light-receiving element includes a substrate; a light-receiving mesa portion, formed on top of the substrate, including a first semiconductor layer of a first conductivity type, an absorption layer, and a second semiconductor layer of a second conductivity type; a light-receiving portion electrode, formed above the light-receiving mesa portion, connected to the first semiconductor layer; a pad electrode formed on top of the substrate; and a bridge electrode, placed so that an insulating gap is interposed between the bridge electrode and the second semiconductor layer, configured to connect the light-receiving portion electrode and the pad electrode on top of the substrate, the bridge electrode being formed in a layer separate from layers of the light-receiving portion electrode and the pad electrode.

The present invention relates to photovoltaic lined optical cavity for a robust power generating apparatus consisting of said cavities and manufacturing methods for said cavities. The photovoltaic lined optical cavity comprises of an optical core, a base substrate, photovoltaic layers lining the optical core, and optical elements. The photovoltaic lined optical cavity is optimized for the light capture of solar radiation and sufficient integrity against mechanical loads.

A semiconductor photodiode. The semiconductor photodiode including: an input waveguide, arranged to receive an optical signal at a first port and provide the optical signal from the second port; a photodiode waveguide, arranged to receive the optical signal from the second port of the input waveguide, and at least partially convert the optical signal into an electrical signal; and an electro-static defence component, located adjacent to the photodiode waveguide. The electro-static defence component and the photodiode waveguide are electrically connected in parallel.

A disclosed semiconductor photodetector includes a first semiconductor layer having a first refractive index and a first band gap; a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having a second refractive index and a second band gap; a first electrode; and a second electrode. The second refractive index is greater than the first refractive index, and the second band gap is smaller than the first band gap. The first semiconductor layer includes a p-type first region, an n-type second region, and a non-conductive third region between the first region and the second region. The second semiconductor layer includes a p-type fourth region in ohmic contact with the first electrode, an n-type fifth region in ohmic contact with the second electrode, and a non-conductive sixth region between the fourth region and the fifth region.

Examples described herein relate to a ring resonator. The ring resonator may include an annular waveguide having a waveguide base and a waveguide core narrower than the waveguide base. Further, the ring resonator may include an outer contact region comprising a first-type doping and disposed annularly and at least partially surrounding an outer annular surface of the waveguide base. Furthermore, the ring resonator may include an inner contact region comprising a second-type doping and disposed annularly contacting an inner annular surface of the waveguide base. Moreover, the ring resonator may include an annular detector region disposed annularly at a distance from and covering at least a portion of a surface of the waveguide core and contacting the outer contact region.

A solar cell device includes a supporting substrate, and an epitaxial active structure that is disposed on the supporting substrate. The epitaxial active structure has a bottom surface adjacent to the supporting substrate and a top surface opposite to the bottom surface, and is formed with an isolation section that extends from the top surface to the bottom surface. A method for producing the solar cell device is also disclosed.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

An optical waveguide type photodetector includes a first semiconductor layer of a first conductive type, a multiplication layer of a first conductive type on the first semiconductor layer, an optical waveguide structure, and a photodiode structure. The photodiode structure has a third semiconductor layer of a second conductive type, an optical absorption layer of an intrinsic conductive type or of a second conductive type, and a second semiconductor layer of a second conductive type. The optical waveguide structure includes an optical waveguiding core layer and a cladding layer. An end face of the photodiode structure located in a second region of the first semiconductor layer and an end face of the optical waveguide structure located in a first region of the first semiconductor layer are in contact.