The end-face incident type semiconductor light receiving device has a first light absorbing region on the main surface side of the semiconductor substrate and causes light incident from the end-face of the semiconductor substrate to enter the first light absorbing region by reflection or refraction, and the first reflective section is provided on the main surface side of the semiconductor substrate to cause light transmitted through the light absorbing region to enter the first light absorbing region, and a single second reflective section is provided on the back surface for causing the light reflected by the first reflective section and transmitted through the first light absorbing region to reflect directly toward the first light absorbing region.

The present invention provides a photodiode for a wearable sensor system, the photodiode having a rectangular active area sensitive to wavelengths within the spectral range of 1200 nm to 2400 nm. The present invention also provides a wearable sensor system comprising the photodiode.

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.

The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: at least one vertical pillar feature within a trench; a photosensitive semiconductor material extending laterally from sidewalls of the at least one vertical pillar feature; and a contact electrically connecting to the photosensitive semiconductor material.

A high efficiency configuration for a string of solar cells comprises series-connected solar cells arranged in an overlapping shingle pattern. Front and back surface metallization patterns may provide further increases in efficiency.

Systems and methods for thermal radiation detection utilizing a thermal radiation detection system are provided. The thermal radiation detection system includes one or more mercury-cadmium-telluride (HgCdTe)-based photodiode infrared detectors or Indium Antimonide (InSb)-based photodiode infrared detectors and a temperature sensing circuit. The temperature sensing circuit is configured to generate signals correlated to the temperatures of one or more of the plurality of infrared sensor elements. The thermal radiation detection system also includes a signal processing circuit.

Example embodiments relate to controlling detection time in photodetectors. An example embodiment includes a device. The device includes a substrate. The device also includes a photodetector coupled to the substrate. The photodetector is arranged to detect light emitted from a light source that irradiates a top surface of the device. A depth of the substrate is at most 100 times a diffusion length of a minority carrier within the substrate so as to mitigate dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source.

A method of manufacturing a semiconductor device includes providing a substrate structure. The substrate structure includes a conductive layer and a plurality of nanopillars spaced apart from each other overlying the conductive layer. Each nanopillar includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer have different conductivity types. The method also includes forming a graphene layer overlying the plurality of nanopillars. The graphene layer is connected to each of the plurality of nanopillars.

A back contact solar cell assembly and methods for its manufacture and assembly onto a panel for use in space vehicles are described. The solar cell assembly includes a compound semiconductor multijunction solar cell having a contact at the top surface of the solar cell, a conductive semiconductor element extending from the contact on the top surface to the back surface of the assembly where it forms a first back contact of a first polarity type, and a second back contact of a second polarity at the back surface of the assembly electrically coupled to the back surface of the solar cell.

An apparatus comprising a substrate, one or more nanowire pillars, each having a base portion and a tip portion, a first electrode connected to the tip portions of the one or more nanowire pillars, an internal hollow cavity positioned between the substrate and the first electrode, such that at least a portion of each of the one or more nanowire pillars extend through the internal hollow cavity, and a second electrode proximate the first side of the substrate. High-performance broadband photodetectors and other optoelectronics for converting light to electricity with enhanced absorption and carrier collection.