The present disclosure provides device for generating electric energy. The device comprises a panel for receiving incident light. The panel is at least partially transmissive for visible light and has first and second surfaces and having a peripheral region comprising at least one edge and/or corner. The panel is arranged such that a portion of light incident on the panel is redirected within the panel towards the peripheral region of the panel. The device further comprises a flexible photovoltaic element that has first and second portions separated by a bend. The bend is located adjacent the edge or corner of the panel whereby the first and second portions of the flexible photovoltaic element are disposed with different orientations within the device.

A sol composition for producing dielectric layers on a metallic substrate including 10 to 30%, by weight of the sol composition, of a precursor including a trialkoxysilane, 10 to 40%, by weight of the sol composition, of titanium dioxide particles whose median size is below 500 nm, 4.5 to 36%, by weight of the sol composition, of silica particles whose particle size distribution D90 is below 100 nm, 5 to 15%, by weight of the sol composition, of a solvent capable of making the precursor miscible in water, 0.1 to 2%, by weight of the sol composition, of an acidic catalyst, the remainder being water.

Embodiments of the present disclosure generally relate to flexible photovoltaic modules that include a multi-layered substrate. In some embodiments, the multi-layered substrate includes one or more layers that are configured to improve the elastic modulus, rigidity, or stiffness of a flexible substrate of a flexible photovoltaic module during a deposition process step at an elevated temperature that is used to form the flexible photovoltaic module. The one or more layers of the multi-layered substrate may also provide improved barrier properties that prevent environmental contaminants from affecting the performance of a formed photovoltaic module, which includes the multi-layered substrate, during normal operation.

A solar panel includes a first photovoltaic cell, a second photovoltaic cell, and a flexible electrical connection structure which comprises an electrically conductive connector that electrically connects the first photovoltaic cell and the second photovoltaic cell in series along a connection direction. The electrically conductive connector does not extend from a first major surface of a flexible transparent insulating sheet through a thickness of the flexible transparent insulating sheet to a second major surface of the flexible transparent insulating sheet.

A photovoltaic module is specified, comprising: a cylindrical light-transmissive tube enclosing an interior and having a main extension direction and a curved inner surface facing the interior, and a mechanically flexible photovoltaic component comprising a solar cell arrangement applied on a carrier film, wherein the photovoltaic component is arranged in the interior, the solar cell arrangement has a curvature, wherein the curvature follows the curved course of the inner surface of the tube at least in places and the solar cell arrangement at least partly covers the inner surface, wherein the covered inner surface forms a light passage surface of the photovoltaic module.

A method for fabricating thin-film optoelectronic devices (100), the method comprising: providing a alkali-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding least one and advantageously at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said alkali metals comprise Rb and/or Cs and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding alkali metals are, for Rb and/or Cs, in the range of 500 to 10000 ppm and, for the other alkali metals, typically Na or K, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of Rb and/or Cs. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices on flexible substrates with high photovoltaic conversion efficiency and faster production rate.

A method to fabricate thin-film photovoltaic devices including a photovoltaic Cu(In,Ga)Se.sub.2 or equivalent ABC absorber layer, such as an ABC.sub.2 layer, deposited onto a back-contact layer characterized in that the method includes at least five deposition steps, during which the pair of third and fourth steps are sequentially repeatable, in the presence of at least one C element over one or more steps. In the first step at least one B element is deposited, followed in the second by deposition of A and B elements at a deposition rate ratio A.sub.r/B.sub.r, in the third at a ratio A.sub.r/B.sub.r lower than the previous, in the fourth at a ratio A.sub.r/B.sub.r higher than the previous, and in the fifth depositing only B elements to achieve a final ratio A/B of total deposited elements.

A thin-film solar cell comprising a substrate, a first electrode layer arranged upon the substrate, a p-type light absorption layer formed by a group I-III-IV.sub.2 compound arranged upon the first electrode layer, and an n-type second electrode layer arranged upon the p-type light absorption layer. The p-type light absorption layer includes Cu as a group 1 element and includes Ga and In as group III elements. The ratio of the atomic number between Cu and the group III elements in the entire p-type light absorption layer is lower than 1.0; the ratio of the atomic number between Ga and the group III elements in the surface on the second electrode layer side is no more than 0.13; and the ratio of the atomic number between Cu and the group III elements in the surface on the second electrode layer side is at least 1.0.

A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is optionally formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

A system for manufacture of I-III-VI-absorber photovoltaic cells involves sequential deposition of films comprising one or more of silver and copper, with one or more of aluminum indium and gallium, and one or more of sulfur, selenium, and tellurium, as compounds in multiple thin sublayers to form a composite absorber layer. In an embodiment, the method is adapted to roll-to-roll processing of photovoltaic cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer of substitutions such as tellurium near the base contact and silver near the heterojunction partner layer, or through gradations in indium and gallium content. In a particular embodiment, the graded composition is enriched in gallium at a base of the layer, and silver at the top of the layer. In an embodiment, each sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium, which react in-situ to form CIGS. In a particular embodiment, a special selenium or tellurium source, valve and delivery subsystem is made of quartz, graphite, coated graphite, or molybdenum. In a particular embodiment, an ion-beam source module configured for surface smoothing the solar absorber sublayer surface before passing through the final deposition zone.