A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes independent from each other; a second electrode disposed to be opposed to the first electrode; an n-type photoelectric conversion layer including a semiconductor nanoparticle, the n-type photoelectric conversion layer being provided between the first electrode and the second electrode; and a semiconductor layer including an oxide semiconductor material, the semiconductor layer being provided between the first electrode and the n-type photoelectric conversion layer.

Provided is a field shaping multi-well photomultiplier and method for fabrication thereof. The photomultiplier includes a field-shaping multi-well avalanche detector, including a lower insulator, an a-Se photoconductive layer and an upper insulator. The a-Se photoconductive layer is positioned between the lower insulator and the upper insulator. A light interaction region, an avalanche region, and a collection region are provided along a length of the photomultiplier, and the light interaction region and the collection region are positioned on opposite sides of the avalanche region.

Provided is a field shaping multi-well photomultiplier and method for fabrication thereof. The photomultiplier includes a field-shaping multi-well avalanche detector, including a lower insulator, an a-Se photoconductive layer and an upper insulator. The a-Se photoconductive layer is positioned between the lower insulator and the upper insulator. A light interaction region, an avalanche region, and a collection region are provided along a length of the photomultiplier, and the light interaction region and the collection region are positioned on opposite sides of the avalanche region.

A manufacturing method of a quantum dot ensemble of the present disclosure is a manufacturing method of a quantum dot ensemble including a plurality of core-shell quantum dots 10A that each includes a core 10B including a compound semiconductor, and a shell 10C including a compound semiconductor and covering the core, and a ligand 10D coordinated to the shell, and the manufacturing method includes mixing a core material, a shell material, and the ligand in a solvent and thereafter performing heating to thereby form the core-shell quantum dots, coordinate the ligand to the shell, and cleave the ligand.

A decrease in sensitivity of distance measurement is reduced. A light receiving element includes a first voltage application unit and a second voltage application unit, a first charge detection unit, and a second charge detection unit. The first voltage application unit and the second voltage application unit are configured in linear shapes extending in the same direction on the surface of the semiconductor substrate that performs photoelectric conversion of the incident light, are arranged apart from each other, and are provided with proximity portions and applied with different voltages. The first charge detection unit is arranged around the first voltage application unit on the surface of the semiconductor substrate and detects a charge generated by photoelectric conversion. The second charge detection unit is arranged around the second voltage application unit on the surface of the semiconductor substrate and detects a charge generated by photoelectric conversion.

In an optical receiver circuit which suppresses an unnecessary increase in impedance and occurrences of resonance and radiation noise and which produces preferable high-frequency transmission characteristics, a PD submount mounted with a PD chip and a chip capacitor and a TIA carrier mounted with a TIA chip are electrically connected to each other by a bonding wire. The chip includes an anode electrode pad and a cathode electrode pad, anode electrode-side ground pads are formed at positions that sandwich the pad, and cathode electrode-side ground pads are formed at positions that sandwich the pad. A wire electrically connects the pad and a signal pad for input of the chip to each other, a wire electrically connects the pad and the capacitor to each other, and a wire electrically connects the pads and the pads to each other.

The present invention provides a photoelectric conversion element having excellent heat resistance. In addition, the present invention provides an optical sensor and an imaging element including the photoelectric conversion element. In addition, the present invention provides a compound applied to the photoelectric conversion element. The photoelectric conversion element according to the embodiment of the present invention including a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) or (2). ##STR00001##

To provide a novel conductive film having two regions differing in the light transmittance, an optoelectronic device having such a conductive film, and a method for producing a conductive film by which such a conductive film can readily be produced.

A conductive film, which has a first region and a second region having a light transmittance higher than the first region,

the conductive film having a first film formed of a conductive material as a material and a resin film formed of a fluorinated polymer as a material,

the first film being disposed to overlap with at least the first region among the first region and the second region,

the resin film being disposed to overlap with the second region, and

the fluorinated polymer satisfying the following (1) and (2):

(1) when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10.sup.−3 Pa, the temperature at which the thermogravimetric loss rate substantially reaches 100% is 400° C. or lower;

(2) when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10.sup.−3 Pa, the temperature width from a temperature at which the thermogravimetric loss rate is 10% to a temperature at which it is 90%, is within 200° C.

In a solid-state imaging element that measures a distance, a circuit scale is reduced. The solid-state imaging element includes a pulse signal generation section and an up-down counter. The pulse signal generation section is provided with an avalanche photodiode that converts incident light including reflected light of irradiation light radiated during a predetermined light-on period into a photocurrent and multiplies the photocurrent and a quench circuit that generates a pulse signal on the basis of the multiplied photocurrent. The up-down counter performs one of up counting and down counting each time the pulse signal is generated during the light-on period, and performs another of the up counting and the down counting each time the pulse signal is generated during a light-off period that does not correspond to the light-on period.

An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 μm or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 μm or longer and shorter than 1.1 μm is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 μm or longer.