A bio-inspired imaging device mimicking visual adaptation of human vision provides a large dynamic range in imaging an image. The device employs a neuromorphic vision sensor realized with phototransistors each being a field-effect transistor, a channel layer of which is an atomically-thin layer of two-dimensional semiconductor material. The channel layer is intentionally formed with defects trap states for trapping a portion of charge carriers generated by a light beam incident on the phototransistor such that intensity information of the light beam is memorized. A gate-source voltage directs the defects trap states to de-trap the trapped portion of charge carriers or to further trap an additional portion of charge carriers, allowing the phototransistor to exhibit a time-dependent excitation or inhibition effect on drain current to thereby enable the imaging sensor to mimic scotopic or photopic adaptation in imaging the image.

Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed in a silicon substrate, in some embodiments, or on a silicon substrate, in some embodiments. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.

Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed on and/or in a silicon substrate. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.

A differential amplifier includes an unmatched pair, including first quantum dots and second quantum dots, and a matched pair, including first and second phototransistors. The unmatched pair has a difference between a first spectrum absorbed by the first quantum dots and a second spectrum absorbed by the second quantum dots. Each of the first and second phototransistors includes a channel. The first quantum dots absorb the first spectrum from incident electromagnetic radiation and gate a first current through the channel of the first phototransistor, and the second quantum dots absorb the second spectrum from the incident electromagnetic radiation and gate a second current through the channel of the second phototransistor. The first and second phototransistors are coupled together for generating a differential output from the first and second currents, the differential output corresponding to the difference between the first and second spectrums within the incident electromagnetic radiation.

A photovoltaic photodetector includes a substrate, a graphene layer, and a dielectric layer positioned between the substrate and the graphene layer. One or more first antenna electrodes includes a first metal in direct contact with the graphene layer. One or more second antenna electrodes includes a second metal in direct contact with the graphene layer. The first and second metals have different work functions. A drain electrode is electrically coupled to the one or more first antenna electrodes, and a source electrode is electrically coupled to the one or more second antenna electrodes. The photovoltaic photodetector can be configured to be operable over a wavelength region of 2 μm to 24 μm and has a response time of 10 ns or less.

Provided are opto-electronic devices with low dark noise and high signal-to-noise ratio and methods of manufacturing the same. An opto-electronic device may include: a semiconductor substrate; a light receiving unit formed in the semiconductor substrate; and a driving circuit arranged on a surface of the semiconductor substrate. The light receiving unit may include: a first semiconductor layer partially arranged in an upper region of the semiconductor substrate and doped with a first conductivity type impurity; a second semiconductor layer arranged on the first semiconductor layer and doped with a second conductivity type impurity; a transparent matrix layer arranged on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to contact the transparent matrix layer; and a first electrode and a second electrode electrically connected to the second semiconductor layer and respectively arranged on both sides of the transparent matrix layer.

A plasmonic field-enhanced photodetector is disclosed. The photodetector may generate photocurrent by absorbing surface plasmon polaritons (SPPs) generated by combining surface plasmons (SPs) with photons of a light wave.

A method and apparatus, the method comprising: forming first electrode portions on a substrate; providing a sheet of two dimensional material overlaying at least part of the first electrode portions; forming second electrode portions on a superstrate; positioning the superstrate overlaying the substrate so that the second electrode portions are aligned with the first electrode portions; and laminating the substrate and the superstrate together so that the sheet of two dimensional material is positioned between the aligned first electrode portions and the second electrode portions.

Embodiments are directed to a chalcogenide material-based filterless color image sensor, which includes a substrate, a first chalcogenide material layer formed on a substrate for a first color, a second chalcogenide material layer formed on the first chalcogenide material layer for a second color, and a third chalcogenide material layer formed on the second chalcogenide material layer for a third color.

A photodiode manufacturing method and a photodiode thereof. The method comprises: doping a second type of material in a first region of an epitaxial layer to form a first doped region; forming a transfer gate on the upper surface of the epitaxial layer, one side of the transfer gate being connected to the first doped region; doping the second type of material in a second region of the epitaxial layer to form a second doped region, the second doped region being connected to the first doped region; and doping the second type of material in a third region of the epitaxial layer to obtain an output region, the other side of the transfer gate being connected to the output region.