According to one embodiment, an optical sensor device includes an insulating substrate, a first conductive layer and an optical sensor element disposed between the insulating substrate and the first conductive layer. The optical sensor element is electrically connected to the first conductive layer and covered by the first conductive layer. The optical sensor element includes a first semiconductor layer formed of an oxide semiconductor and controls an amount of charge flowing to the first conductive layer according to an amount of incident light to the first semiconductor layer.

An optical sensor includes a graphene layer, a first electrode and a second electrode that are connected to the graphene layer, and an enhancement layer. The enhancement layer is disposed below the graphene layer to enhance the intensity of an optical electric field by surface plasmon resonance. The first electrode and the second electrode are arranged parallel to a first direction. The intensity of the optical electric field enhanced by the enhancement layer is greater on a first electrode side than on a second electrode side with respect to a centerline in the first direction of the graphene layer.

A semiconductor device includes a semiconductor structure formed on a substrate, a gate formed on a first side of the semiconductor structure, and a charge collector layer formed on a second side of the semiconductor structure.

One or more systems and/or methods are disclosed for building a relief print generator with no bezel. An electrode layer having more than one electrode can be used in an electrode-based, electro-luminescence component of the relief print generator. The respective electrodes may be connected to power sources with different voltage phases. An electrical circuit can be created between a biometric object and more than one electrode in the electrode layer when the biometric object contacts a surface of the generator. The electro-luminescent component can be activated by electrical charge and emit light indicative of a relief print of the biometric object. A contact electrode outside the electrode layer may not be used, which may allow for the removal of a bezel from an example device.

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

The present application discloses a sensor device and a display device. The sensor device includes a substrate, a light control component, a touch control component, and a functional dielectric layer, wherein the light control component and the touch component are disposed on the substrate, the touch component is disposed on the light control component, and the functional dielectric layer is disposed on a side of the touch control component away from the substrate and at least covers the touch control component, and configured to apply an electrostatic force to an external object when the external object is in contact with the functional dielectric layer.

Some embodiments of the present disclosure provide a semiconductor-based photon-counting sensor comprising a metal-insulator-semiconductor internal photoemission (e.g., thermionic-emission) detector formed on and/or in a first surface of a semiconductor substrate, and at least one jot formed on and/or in a second side of a semiconductor substrate. The at least one MIS photoemission detector and the at least one jot are configured such that a photocarrier generated in response to a photon incident on the MIS thermionic-emission detector is readout by the at least one jot.

An electrostatically controlled sensor includes a GaN/AlGaN heterostructure having a 2DEG channel in the GaN layer. Source and drain contacts are electrically coupled to the 2DEG channel through the AlGaN layer. A gate dielectric is formed over the AlGaN layer, and gate electrodes are formed over the gate dielectric, wherein each gate electrode extends substantially entirely between the source and drain contacts, wherein the gate electrodes are separated by one or more gaps (which also extend substantially entirely between the source and drain contacts). Each of the one or more gaps defines a corresponding sensing area between the gate electrodes for receiving an external influence. A bias voltage is applied to the gate electrodes, such that regions of the 2DEG channel below the gate electrodes are completely depleted, and regions of the 2DEG channel below the one or more gaps in the direction from source to drain are partially depleted.

A display device includes a first base layer, a circuit layer disposed on the first base layer and including a plurality of switching elements, a pixel layer disposed on the circuit layer and including a light emitting element, wherein the light emitting element is configured to receive a current from at least one of the plurality of switching elements to emit a first light, and a sensor layer disposed below the first base layer and including a sensor, wherein the sensor is configured to receive a second light generated when the first light is reflected by an external object.

Embodiments described herein relate to detectors and their method of use for sensing electromagnetic fields, electromagnetic signals, biochemical analytes, and/or other conditions in subjects. The device may include an inductively-coupled implantable coil-based transducer that converts electrical, photonic, biochemical signals, and/or other appropriate signals and/or conditions originating in tissues and/or transplanted tissue grafts into changes in a property of the transducer, such as a resonance frequency, that may be detected using an alternating magnetic field that may be provided by a magnetic resonance imaging (MRI) signal and/or other appropriate source. In some embodiments, the detector comprises a FET that changes state upon detection of a subject condition of interest. The change in the FET may change the resonance frequency of an associated LC or RLC circuit. The change in resonance frequency may change the brightness and/or intensity of the detector when detected by an MRI scanner or other appropriate scanner.