A cover for an electronic circuit package, including: a body having an opening extending therethrough; a first element located in the opening and having a surface continuing planar or rounded shapes of a surface of the cover; and a second element of connection of the first element to the body.

An optical coupling device includes a leadframe, a light-emitter, a light-receiver, and first to fourth resins. The light-emitter is located on the leadframe. The first resin is located on the leadframe. The first resin includes first and second portions. The first portion surrounds the light-emitter. The second portion is positioned between the first portion and the light-emitter. A first thickness of the first portion is greater than a second thickness of the second portion. The second resin is located between the light-emitter and the light-receiver in the first direction and is light-transmissive. The third resin is located between the second resin and the light-receiver and is light-transmissive. The fourth resin houses the light-emitter, the light-receiver, and the first to third resins and is light-shielding.

An optical numerical computation method obtains operands that have respective values, and modulates light sources to output light at amplitudes proportional to the operands. The light output for a given operand depends on whether the operand is positive or negative. The positive operands are output at wavelengths different from the negative operands. For operands that have multiple digits, the digits are separately treated so that the least significant digits are modulated with light sources at one frequency, and the most significant digits in two-digit numbers are modulated at another frequency, with positive and negative operands modulated at different frequencies. The light from the light sources enters a light collection cavity where it is sensed with sensors that generate resultant outputs at values indicative of the sensed light value.

A semiconductor structure includes a substrate, a plurality of micro semiconductor devices and a fixing structure. The micro semiconductor devices are disposed on the substrate. The fixing structure is disposed between the substrate and the micro semiconductor devices. The fixing structure includes a plurality of conductive layers and a plurality of supporting layers. The conductive layers are disposed on the lower surfaces of the micro semiconductor devices. The supporting layers are connected to the conductive layers and the substrate. The material of each of the conductive layers is different from the material of each of the supporting layers.

The present invention relates to an apparatus for damping arid monitoring emissions from a light emitting device, particularly a vertical cavity surface emitting laser (VCSEL), comprising: a semi transparent substrate, preferably glass; a light emitting device for generating light emission; a damping layer deposited on a surface of the substrate; and a pair of electrodes, each of which being in direct contact with the damping layer. The damping layer is adapted to decrease the power level of the light emission of the light emitting device by absorption, to a desired level, for instance, to a level that meets eye safety limits. In addition, the damping layer is photosensitive to the light emission of the light emitting device, thereby allowing the pair of electrodes to output an electric signal corresponding to the power level of the light emission of the light emitting device.

A semiconductor structure includes a substrate, a plurality of micro semiconductor devices and a fixing structure. The micro semiconductor devices are disposed on the substrate. The fixing structure is disposed between the substrate and the micro semiconductor devices. The fixing structure includes a plurality of conductive layers and a plurality of supporting layers. The conductive layers are disposed on the lower surfaces of the micro semiconductor devices. The supporting layers are connected to the conductive layers and the substrate. The material of each of the conductive layers is different from the material of each of the supporting layers.

An encapsulation cover for an electronic package includes a frontal wall with a through-passage extending between faces. The frontal wall includes an optical element that allows light to pass through the through-passage. A cover body and a metal insert that is embedded in the cover body, with the cover body being overmolded over the metal insert, defines at least part of the frontal wall.

A semiconductor device includes an optical source; a photoconductive switch triggered by the optical source; and an enclosure unit that contains the optical source and the photoconductive switch in a single integrated package. The optical source may output a laser. The optical source may be a diode. The enclosure unit may be conductive. The enclosure unit may be non-conductive. The device may include an electrical connector operatively connected to the optical source. The electrical connector may provide power and control signals to the optical source. The electrical connector may be attached to an outer surface of the enclosure unit.

An encapsulation cover for an electronic package includes a frontal wall with a through-passage extending between faces. The frontal wall includes an optical element that allows light to pass through the through-passage. A cover body and a metal insert that is embedded in the cover body, with the cover body being overmolded over the metal insert, defines at least part of the frontal wall.

A light-receiving device includes a first semiconductor layer having a first conductivity type, an optical waveguide structure on a first region of the first semiconductor layer, and a photodiode structure on a second region adjacent to the first region of the first semiconductor layer. The optical waveguide structure includes a core layer on the first semiconductor layer, and a cladding layer on the core layer. The photodiode structure includes a light-absorbing layer optically coupled with the core layer, and a second semiconductor layer having a second conductivity type on or above the light-absorbing layer. The light-absorbing layer includes a third semiconductor layer having a p-type, and a fourth semiconductor layer having a n-type or an i-type. The third semiconductor layer is disposed between the fourth semiconductor layer and a p-type layer that is one of the first semiconductor layer and the second semiconductor layer.