An optical package structure includes a substrate, an emitter, a first detector and a light-absorption material. The substrate has a first surface and a second surface opposite to the first surface, the substrate includes a via defining a third surface extending from the first surface to the second surface. The emitter is disposed on the first surface of the substrate. The first detector is disposed on the first surface and aligned with the via of the substrate. The light-absorption material is disposed on the third surface of the substrate.

A detection device includes a photoelectric conversion portion in which a plurality of photodiodes are arranged in a planar shape, a light source configured to irradiate the photodiodes with light, and a heating electrode provided so as to face the photoelectric conversion portion, and configured to generate heat and conduct the heat to the photoelectric conversion portion.

The disclosed semiconductor device includes a region provided with a plurality of circuit blocks each including an avalanche photodiode. A part of the plurality of circuit blocks is a pixel circuit further including a first control circuit configured to control the avalanche photodiode to a standby state in which an avalanche multiplication is possible and a recharging state in which the avalanche photodiode is returned to a state in which the avalanche multiplication is possible after the avalanche multiplication occurs, in response to the first control signal, and another part of the plurality of circuit blocks is a signal generation circuit configured to generate a signal corresponding to a waveform of the first control signal. The signal generation circuit is configured not to output a signal corresponding to the output of the avalanche photodiode.

To provide a ranging device having improved quantum efficiency and resolution. The present disclosure provides a ranging device including: a semiconductor layer having a first surface and a second surface opposite to the first surface; a lens on the second surface side; first and second charge storage sections in the semiconductor layer on the first surface side; a photoelectric conversion section that is in contact with the semiconductor layer on the first surface side, the photoelectric conversion section including a material different from a material of the semiconductor layer; first and second voltage application sections that apply a voltage to the semiconductor layer between the first and second charge storage sections and the photoelectric conversion section; and a waveguide provided in the semiconductor layer so as to extend from the second surface to the photoelectric conversion section, the waveguide including a material different from the material of the semiconductor layer.

An optical receiver module includes a light receiving element that has a first electrode and a second electrode for receiving a bias and converts an optical signal inputted into an electrical signal to output the electrical signal via the first electrode. A signal line extends from the first electrode through the light receiving element-side signal pad and the second wire to the amplifier-side signal pad. A bias line extends from the second electrode through the light receiving element-side bias pad, the first wire, and the third wire to the first and second amplifier-side bias pads. The signal line three-dimensionally intersects with the bias line at an interval in a direction of the loop height of the first wire and that of the second wire.

In one embodiment, a photo detector is provided with a semiconductor layer having a first light receiving surface and a second light receiving surface opposite to the first light receiving surface, and a diffraction grating which is provided on the first light, receiving surface side of the semiconductor layer and has convex portions. The convex portions are arranged in one direction at a predetermined cycle.

A fingerprint identification structure and a display panel are disclosed. display panel includes a fingerprint identification structure. The fingerprint identification structure includes a light energy switch and a thermosensitive light path adjustment structure. The light energy switch is configured to switch from an open circuit to a closed circuit under light irradiation. The thermosensitive light path adjustment structure is connected to a surface of the light energy switch, is able to transmit light internally, and is configured to adjust a light path of light to drive the light to irradiate the light energy switch when receiving a heat source.

A plasmonic photoconductor sensing platform is provided. The plasmonic photoconductor sensing platform includes an insulating substrate; a semiconducting film placed on top of the insulating substrate; two metal contacts placed at least in part on the semiconducting film to enforce an electric field; a plurality of plasmonic nanostructures deposited on the semiconducting film and physically separated from metal contacts; an insulating layer, the insulating electrically isolating the plasmonic nanostructures from semiconductor; at least one energy source; and at least one microfluidic channel disposed on the insulating layer.

A novel information processing device with high convenience or high reliability is provided. Furthermore, a novel semiconductor device with high convenience or high reliability is provided. The information processing device includes a housing, an attitude sensor, a plurality of photosensors, and an arithmetic device. The attitude sensor has a function of sensing an attitude of the housing and a function of supplying attitude information based on the attitude. The housing includes a plurality of regions. The photosensors have a function of measuring illuminance in each of the plurality of regions and a function of supplying illuminance information based on the illuminance. The arithmetic device has a function of selecting one region on the basis of the attitude information and a function of operating on the basis of the illuminance information of the selected region.

The present disclosure describes quantum dot film based demodulation structures and optical ranging systems including an array of QDF demodulation structures.