The invention relates to a housing for an optoelectronic device and to a method for producing such a housing. For producing a lid for the housing, an infrared-transparent material is used, into which at least one glass window is integrated.

The invention relates to a housing for an optoelectronic device and to a method for producing such a housing. For producing a lid for the housing, an infrared-transparent material is used, into which at least one glass window is integrated.

To provide a light receiving element including: a photoelectric conversion unit (PD) that is provided in a semiconductor substrate and converts light into a charge; a first charge accumulation unit (MEM) to which the charge is transferred from the photoelectric conversion unit; a second charge accumulation unit (MEM) to which the charge is transferred from the photoelectric conversion unit, in which each of the first and second charge accumulation units includes a stack of an electrode, a first insulating layer, and a semiconductor layer.

A method of forming a high voltage optical transformer includes forming a via through a transparent carrier wafer, forming a conductive layer within the via, bonding a solid state lighting (SSL) package to a first side of the carrier wafer, and bonding a photovoltaic (PV) wafer to a second side of the carrier wafer opposite to the first side. The photovoltaic wafer may include an active area and a conductive area located outside of the active area that is in electrical contact with the conductive layer. The method further includes forming both an SSL contact with the solid state lighting package and a PV contact with the conductive layer on the same side of the carrier wafer.

A light emitting diode (LED) array may include a first pixel and a second pixel on a substrate. The first pixel and the second pixel may include one or more tunnel junctions on one or more LEDs. The LED array may include a first trench between the first pixel and the second pixel. The trench may extend to the substrate.

A light emitting diode (LED) array may include a first pixel and a second pixel on a substrate. The first pixel and the second pixel may include one or more tunnel junctions on one or more LEDs. The LED array may include a first trench between the first pixel and the second pixel. The trench may extend to the substrate.

A complex sensing device packaging structure and packaging method are disclosed. The packaging structure includes a substrate disposed with a light emitting element and a light sensing chip. A first non-transparent material is disposed on the light sensing chip. A transparent molding material surrounds the light emitting element, the light sensing chip and the first non-transparent material. A second non-transparent material is disposed inside the transparent molding material, and the second non-transparent material is connected with the first non-transparent material

A complex sensing device packaging structure and packaging method are disclosed. The packaging structure includes a substrate disposed with a light emitting element and a light sensing chip. A first non-transparent material is disposed on the light sensing chip. A transparent molding material surrounds the light emitting element, the light sensing chip and the first non-transparent material. A second non-transparent material is disposed inside the transparent molding material, and the second non-transparent material is connected with the first non-transparent material

An optoelectronic package structure is provided. The optoelectronic package structure includes a carrier, a metal member, an insulating layer, an optoelectronic element, and an adhesive. The metal member is disposed on the carrier. The insulating layer is disposed on the metal member. The insulating layer has a plurality of grooves, and a carrying region is defined by the grooves. The optoelectronic element is disposed on the insulating layer. The adhesive is filled into the grooves and bonds the optoelectronic element onto the carrying region of the insulating layer.

According to one embodiment, a semiconductor device includes: a substrate that has a first surface extending in a first direction and a second direction; a first metal oxide semiconductor field effect transistor (MOSFET) that is provided on the first surface of the substrate; a support base that is provided above the first surface of the substrate and extends in a third direction intersecting the first direction and the second direction; a light receiving element that is in contact with a second surface of the support base facing the first direction; and a light emitting element that is in contact with a third surface of the light receiving element facing the first direction.