Patent classifications
H01L31/186
Solar roof tile free of back encapsulant layer
One embodiment can provide a photovoltaic roof tile. The photovoltaic roof tile can include a front glass cover, a back glass cover, a plurality of photovoltaic structures positioned between the front and back glass covers, and a single encapsulant layer positioned between the front glass cover and the photovoltaic structures. A surface of the photovoltaic structures is in direct contact with the back glass cover.
Photovoltaic devices with narrow scribes and methods and systems for forming the same
According to the embodiments provided herein, a method for scribing a layer stack of a photovoltaic device can include directing a laser scribing waveform to a film side of a layer stack. The laser scribing waveform can include pulse groupings that repeat at a group repetition period of greater than or equal to 1.5 μs. Each pulse of the pulse groupings can have a pulse width of less than or equal to 900 fs.
Repairing a solar cell bonded on a flexible circuit
A method of repairing a solar cell bonded on a substrate, by bonding a replacement solar cell on top of an existing solar cell, without removing the existing solar cell. The substrate may comprise a flexible circuit, printed circuit board, flex blanket, or solar cell panel. The bonding of the replacement solar cell on top of the existing solar cell uses a controlled adhesive pattern. Electrical connections for the existing solar cell and the replacement solar cell are made using electrical conductors on, above or embedded within the substrate. The electrical connections may extend underneath the replacement solar cell. The method further comprises removing interconnects for the electrical connections for the existing solar cell, and then welding or soldering interconnects for the electrical connections for the replacement solar cell.
Controlling detection time in photodetectors
Example embodiments relate to controlling detection time in photodetectors. An example embodiment includes a device. The device includes a substrate. The device also includes a photodetector coupled to the substrate. The photodetector is arranged to detect light emitted from a light source that irradiates a top surface of the device. A depth of the substrate is at most 100 times a diffusion length of a minority carrier within the substrate so as to mitigate dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source.
DIVISION DEVICE AND DIVISION METHOD THEREOF
A division device includes a platform, a withstanding element and a pressure element. The platform has a platform surface. The withstanding element, located on the platform surface, has at least one shrink-top-type withstanding structure protruding from the platform surface and extending along a withstanding line. The shrink-top-type withstanding structure is to withstand the solar cell sheet. The pressure element, located above the platform, has two forcing portions protruding toward the platform. While the solar cell sheet is under dividing, a back surface of the solar cell sheet opposing to the front surface is arranged to face the shrink-top-type withstanding structure by aligning the trench with the withstanding line, and then the two forcing portions are introduced to apply predetermined depression individually onto the two solar cell units, such that the solar cell sheet are divided into the two separate solar cell units.
Method for sorting optoelectronic semiconductor components and device for sorting optoelectronic semiconductor components
A method for sorting optoelectronic semiconductor components is specified. The semiconductor components each include an active region for emission or detection of electromagnetic radiation. The method includes the following steps: introducing the semiconductor components into a sorting region on a specified path; irradiating the optoelectronic semiconductor components with electromagnetic radiation of a first wavelength range to generate dipole moments by charge separation in the active regions of the optoelectronic semiconductor components; and deflecting the optoelectronic semiconductor components from the specified path as a function of their dipole moment by means of a non-homogeneous electromagnetic field. A device for sorting optoelectronic semiconductor components is further specified.
METHOD FOR INCREASING THE ENERGY OUTPUT OF AN ALREADY INSTALLED SOLAR POWER PLANT, SOLAR POWER PLANT RETROFITTING SYSTEM AND SOLAR POWER PLANT
A method for increasing the energy output of an already installed solar power plant is provided including at least one first solar panel, which is absorbing sunlight in a first frequency band, wherein a semi-transparent second solar panel, which absorbs light in a second frequency band, is mounted on top of at least one of the at least one first solar panel and connected to a power electronics device of the solar power plant including at least one solar inverter, wherein the first and second frequency bands do not or only partially overlap such that the second solar panel allows at least a part of the light of the first frequency band to pass.
DEVICE AND METHOD FOR REPAIRING PHOTOVOLTAIC CELL STRING
Provided is a device and method for repairing photovoltaic cell string. The device for repairing photovoltaic cell string includes: a conveying device and a baking device. The conveying device is configured to drive a photovoltaic cell string placed on the conveying device to reciprocate along a first direction. The conveying device includes a first conveying component, a second conveying component and a third conveying component separately arranged. The baking device is arranged toward the second conveying component. The baking device is configured to heat the photovoltaic cell string located on the second conveying component, so that a protruding solder strip of a solar cell on the photovoltaic cell string is separated or fused at its connecting part.
Substrates having a broadband antireflection layer and methods of forming a broadband antireflection layer
Embodiments of the present disclosure provide for methods of making substrates having an (AR) antireflective layer, substrates having an antireflective layer, devices including a substrate having an antireflective layer, and the like. The AR layer can have a total specular reflection of less than 10% at a wavelength of about 400-800 nm, and a height of about 500-1000 nm.
Semiconductor component having a compressive strain layer and method for producing the semiconductor component having a compressive strain layer
A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.