Discussed is a solar cell including a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

An integrated tandem solar cell includes a first solar cell including a rear electrode, a light absorption layer disposed on the rear electrode, and a buffer layer disposed on the light absorption layer; a recombination layer including a first transparent conductive layer disposed on the buffer layer; a nanoparticle layer that is transparent and conductive, that is disposed on the first transparent conductive layer, and that planarizes the first solar cell; and a second transparent conductive layer disposed on the nanoparticle layer; and a second solar cell that is a perovskite solar cell including a perovskite layer and that is disposed on and bonded to the second transparent conductive layer of the recombination layer. The recombination layer electrically joins the first and second solar cells and planarizes the first solar cell so that the second solar cell is uniformly deposited in all regions thereof.

A method for thermally activating a passivation layer disposed on a photovoltaic cell. The photovoltaic cell includes a first face, a second face opposite to the first face, and side surfaces connecting the first and second faces. The passivation layer covers at least one of the side surfaces of the photovoltaic cell. The method includes exposing the first face to electromagnetic radiation emitted by a radiation source. The electromagnetic radiation is applied to the first face along a line. The line sweeps at least part of the first face and is oriented relative to the first face so as to provide an overheating zone encompassing at least part of the passivation layer.

The present invention provides a method for manufacturing a solar cell including: preparing a semiconductor silicon substrate which has an electrode, which is formed by baking an electrode precursor containing Ag powder on at least one main surface, has a PN junction, and is less than 100° C.; and performing an annealing treatment to the semiconductor silicon substrate at 100° C. or more and 450° C. or less. Consequently, there is provided the method for manufacturing a solar cell which suppresses a degradation phenomenon that an output of the solar cell is lowered when the solar cell is left as it stands at a room temperature in the atmosphere.

Methods and apparatus to control zone temperatures in a solar cell production system are disclosed. An example furnace to fire photovoltaic cells includes: a plurality of zones comprising firing elements configured to fire a metallization layer of photovoltaic cells by heating the photovoltaic cells in the zones; one or more belts configured to transport photovoltaic cells through a sequence of the plurality of zones; a user interface comprising one or more input devices; and control circuitry configured to: control the firing elements for the plurality of zones; and modify a configuration of two or more of the plurality of zones based on input received via the input device.

Hybrid transparent conducting materials are disclosed which combine a polycrystalline film and conductive nanostructures, in which the polycrystalline film is “percolation doped” with the conductive nanostructures. The polycrystalline film preferably is a single atomic layer thickness of polycrystalline graphene, and the conductive nanostructures preferably are silver nanowires.

The present disclosure provides a method for rapidly treating a heterojunction solar cell fabricated using a crystalline silicon wafer doped exclusively with n-type dopants to improve surface passivation and carrier transport properties using the following steps: providing a heterojunction solar cell; the solar cell having an n-type silicon substrate exclusively doped with n-type dopants with a concentration higher than 1×10.sup.14 cm.sup.−3 and a plurality of metallic contacts; illuminating a surface portion of the solar cell for a period of less than 5 minutes and at a temperature between 200° C. and 300° C. with light having an intensity of at least 2 kW/m.sup.2 and a wavelength such that the light is absorbed by the surface portion and generates electron-hole pairs in the solar cell. The step of illuminating a surface portion of the solar cell is such that less than 0.5 kWh/m.sup.2 of energy is transferred to the surface portion and a temperature of the surface portion increases at a rate of at least 10° C./s for a period of time during illumination.

A solar cell superfine electrode transfer thin film is described. The electrode transfer thin film sequentially includes from bottom to top a substrate, a release layer, a resin layer and a hot melt adhesive layer; the resin layer is formed with electrode trenches therein; the electrode trenches are formed with electrodes therein; superfine conductive electrodes are continuously prepared on a transparent thin film via a roll-to-roll nanoimprinting method, the width of an electrode wire being 2 μm-50 μm, and the width of a typical line being 10 μm-30 μm. Directly attach the superfine electrodes of the hot melt adhesive layer to a solar cell by peeling off the substrate material, and sintering at a high temperature to volatilize the hot melt adhesive layer material while retaining the electrodes, thus the electrodes are integrally transferred, without poor local transfer.

A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×10.sup.15 cm.sup.−3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.