Provided are a solar cell, a manufacturing method thereof, and a photovoltaic module. The solar cell includes: a semiconductor substrate, in which a rear surface of the semiconductor substrate having a first texture structure, the first texture structure includes two or more first substructures at least partially stacked on one another, and in a direction away from the rear surface and perpendicular to the rear surface, a distance between a top surface of an outermost first substructure and a top surface of an adjacent first substructure being less than or equal to 2 μm; a first passivation layer located on a front surface of the semiconductor substrate; a tunnel oxide layer located on the first texture structure; a doped conductive layer located on a surface of the tunnel oxide layer; and a second passivation layer located on a surface of the doped conductive layer.

Provided are a solar cell, a manufacturing method thereof, and a photovoltaic module. The solar cell includes: a semiconductor substrate, in which a rear surface of the semiconductor substrate having a first texture structure, the first texture structure includes two or more first substructures at least partially stacked on one another, and in a direction away from the rear surface and perpendicular to the rear surface, a distance between a top surface of an outermost first substructure and a top surface of an adjacent first substructure being less than or equal to 2μm; a first passivation layer located on a front surface of the semiconductor substrate; a tunnel oxide layer located on the first texture structure; a doped conductive layer located on a surface of the tunnel oxide layer; and a second passivation layer located on a surface of the doped conductive layer.

Provided are a solar cell, a manufacturing method thereof and a photovoltaic module. The solar cell includes a semiconductor substrate, the semiconductor substrate having a first surface and a second surface opposite to each other; a first passivation layer and a first electrode layer that are located on the first surface of the semiconductor substrate; and a second passivation layer and a second electrode layer that are located on the second surface of the semiconductor substrate. A donor material film layer is provided between the first passivation layer and the first surface of the semiconductor substrate, and/or an acceptor material film layer is provided between the second passivation layer and the second surface of the semiconductor substrate.

A passivation structure includes a bottom dielectric layer. The passivation structure further includes a doped dielectric layer over the bottom dielectric layer. The doped dielectric layer includes a first doped layer and a second doped layer. The passivation structure further includes a top dielectric layer over the doped dielectric layer.

A method of forming a sandwich passivation layer (405) on a semiconductor device (400) comprising a bond pad (404) is provided. The method comprises forming a first layer (406) over a surface of the semiconductor device (400), removing a part of the first layer (406) to expose a surface of the bond pad (404), forming a second layer (407) over the first layer (406) and the surface of the bond pad (404), and forming a third layer (408) over the second layer (407), wherein the surface of the bond pad (404) is not in contact with the first layer (406) or third layer (408).

The disclosure provides a solar cell and a back contact structure thereof, a photovoltaic module, and a photovoltaic system. The back contact structure includes a first doped region having an opposite polarity to a silicon substrate and a second doped region having a same polarity as the silicon substrate. An isolation region is arranged between the first doped region and the second doped region. The protective region arranged on the first doped region includes an insulation layer and a third doped layer having a same polarity as the second doped region. An opening is provided in the protective region to connect the first conductive layer to the first doped region. In the present invention, scratches caused by belt transmission in an existing cell fabrication process is resolved.

This disclosure relates to a method (100) for passivating a semiconductor structure, comprising a semiconductor layer and an oxide layer on the semiconductor layer; a semiconductor structure; and a vacuum processing system. The method (100) comprises providing the semiconductor structure (110) in a vacuum chamber (310) and, while keeping the semiconductor structure in the vacuum chamber (120) throughout a refinement period with a duration of at least 25 s refining the oxide layer (130) by maintaining temperature (131) of the semiconductor structure within a refinement temperature range extending from 20° C., to 800° C., and maintaining total pressure (132) in the vacuum chamber below a maximum total pressure, of 1×10.sup.−3 mbar.

A method for thermally activating a passivation layer disposed on a photovoltaic cell. The photovoltaic cell includes a first face, a second face opposite to the first face, and side surfaces connecting the first and second faces. The passivation layer covers at least one of the side surfaces of the photovoltaic cell. The method includes exposing the first face to electromagnetic radiation emitted by a radiation source. The electromagnetic radiation is applied to the first face along a line. The line sweeps at least part of the first face and is oriented relative to the first face so as to provide an overheating zone encompassing at least part of the passivation layer.

A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.

Disclosed are a solar cell including an upper cell includes an upper passivation layer disposed on an upper surface of a functional layer, a transparent electrode disposed on an upper surface of the upper passivation layer, an upper first charge transport layer disposed on an upper surface of the transparent electrode, an upper electrode disposed on the upper first of the transparent electrode to be adjacent to the upper surface charge transport layer, an upper second charge transport layer disposed on the upper surface of the functional layer to be spaced apart from the upper passivation layer, the transparent electrode, the upper first charge transport layer, and the upper electrode, and an upper absorption layer disposed on the upper passivation layer, the transparent electrode, the upper first charge transport layer, and the upper second charge transport layer.