Provided is a semiconductor layer light-emitting element having tunneling blocking layers interposed between adjacent active regions, wherein the tunneling blocking layers are semiconductor layers, which do not allow the movement of an electron or a hole at an applied voltage sufficient to activate only one active region among all active regions, and independently separate two adjacent active regions in a quantum region range, so that the semiconductor light-emitting element comprises multiple independent active regions in a vertical direction in a single chip and thus can be driven at high voltages.

A device includes a support including at least a first area and a second area, and a plurality of first light emitting devices located over the first area of the support, each first light emitting device containing a first growth template including a first nanostructure, and each first light emitting device has a first peak emission wavelength. The device also includes a plurality of second light emitting devices located over the second area of the support, each second light emitting device containing a second growth template including a second nanostructure, and each second light emitting device has a second peak emission wavelength different from the first peak emission wavelength. Each first growth template differs from each second growth template.

A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.

A light emitting apparatus includes: plural first light emitting units arranged at intervals along a predetermined first direction; plural second emitting units arranged at intervals along the first direction, maned at positions deviating tram the first light emitting units in a second direction intersecting the first direction, and arranged at positions deviating from the first light emitting units in the first direction, first wirings electrically connected to each of the first light emitting units by a semiconductor layer; and second wirings electrically connected to each of the second light emitting units, and disposed with an insulating layer interposed between the second light emitting units and the second wirings in a third direction that intersects the first direction and the second direction.

A method for manufacturing a laminated substrate includes removing a portion not covered with a resist layer from a laminated substrate with an etchant to form a wiring, the laminated substrate including: a base layer including a mesa portion having a trapezoidal cross section, the mesa portion having a first inclined surface extending downward and outward from a top surface and a second inclined surface having an eaves-shaped portion protruding outward from the top surface; a wiring layer formed on an upper surface of the base layer; and the resist layer formed on an upper surface of the wiring layer and having a shape corresponding to a shape of the wiring, and the wiring is arranged at a position where the wiring covers a whole of the eaves-shaped portion of the second inclined surface.

A micro-light emitting diode (micro-LED) includes a current aperture to confine the current in a localized region such that the carrier recombination mostly occurs in the localized region to emit photons, thereby reducing the surface recombination and improving the quantum efficiency. The current confinement and localization are achieved using a localized breakthrough of a barrier layer by a localized contact, lightly p-doped active layers to suppress lateral transport of the carriers to the surface region, selective ion implantation, etching, or oxidation of a semiconductor layer, or any combination thereof.

A micro-light emitting diode (micro-LED) includes a current aperture to confine the current in a localized region such that the carrier recombination mostly occurs in the localized region to emit photons, thereby reducing the surface recombination and improving the quantum efficiency. The current confinement and localization are achieved using a localized breakthrough of a barrier layer by a localized contact, lightly p-doped active layers to suppress lateral transport of the carriers to the surface region, selective ion implantation, etching, or oxidation of a semiconductor layer, or any combination thereof.

A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.

A light emitter includes: a light emitting unit that has multiple light emitting points; and a shifting unit that sets in a shift operation the light emitting points that are to be lit by the light emitting unit. The shifting unit includes multiple starting points where the shift operation starts, multiple blocks that undergo the shift operation from the starting points, and a shift signal line that is commonly arranged for the blocks and selects a block that undergoes the shift operation in response to a shift signal.

A method to fabricate micro-size III-nitride light emitting diodes (μLEDs) with an epitaxial tunnel junction comprised of a p+GaN layer, an In.sub.xAl.sub.yGa.sub.zN insertion layer, and an n+GaN layer, grown using metalorganic chemical vapor deposition (MOCVD), wherein the μLEDs have a low forward the GaN layers, which reduces a depletion width of the tunnel junction and increases the tunneling probability. The μLEDs are fabricated with dimensions that vary from 25 to 10,000 μm.sup.2. It was found that the In.sub.xAl.sub.yGa.sub.zN insertion layer can reduce the forward voltage at 20 A/cm.sup.2 by at least 0.6 V. The tunnel junction μLEDs with an n-type and p-type In.sub.xAl.sub.yGa.sub.zN insertion layer had a low forward voltage at 20 A/cm.sup.2 that was very stable. At dimensions smaller than 1600 μm.sup.2, the low forward voltage is less than 3.2 V.