In an embodiment a method includes providing a plurality of radiation-emitting semiconductor chips configured to emit primary radiation of a first wavelength range, applying a converter on the plurality of radiation-emitting semiconductor chips, the converter configured to emit secondary radiation of a second wavelength range, applying a mirror layer sequence arranged downstream of the converter, the mirror layer sequence configured to reflect the primary radiation and transmit the secondary radiation and singulating the plurality of radiation-emitting semiconductor chips in order to produce optoelectronic components, wherein the converter is applied on the plurality of radiation-emitting semiconductor chips by spray coating, and wherein the mirror layer sequence is applied on the converter by sputtering, atomic layer deposition and/or plasma-enhanced chemical vapor deposition (PECVD).

Waveguides and electromagnetic cavities fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. Devices comprising electromagnetic cavities fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. Devices comprising waveguides fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. The devices include electromagnetic splitters, filters, and sensors.

A flip-chip light emitting device includes a transparent substrate, an epitaxial light-emitting structure, a transparent bonding layer interposed between the transparent substrate and the light-emitting structure, and a protective insulating layer disposed over the light-emitting structure and the bonding layer. The transparent bonding layer has a smaller-thickness section that has a first contact surface for the protective insulating layer to be disposed thereover, and a larger-thickness section that has a second contact surface meshing with and bonded to a roughened bottom surface of the light-emitting structure. The first contact surface is smaller in roughness than the second contact surface. A method for producing the device is also disclosed.

Manufacturing optoelectronic modules includes supporting a printed circuit board substrate (27) on a first vacuum injection tool (24). The printed circuit board substrate (27) has at least one optoelectronic component mounted thereon and has a solder mask (40) on a surface (46) facing away from the first vacuum injection tool (24). The method includes causing the first vacuum injection tool (24) and a second vacuum injection tool (22) to be brought closer to one another such that a surface (46) of the second vacuum injection tool (22) is in contact with the solder mask (40). Subsequently, a first epoxy (100, 20) is provided, using a vacuum injection technique, in spaces (104) between the upper tool (22) and the solder mask (40).

A layered heterostructure, comprising alternating layers of different semiconductors, wherein one of the atom species of one of the semiconductors has a faster diffusion rate along an oxidizing interface than an atom species of the other semiconductor at an oxidizing temperature, can be used to fabricate embedded nanostructures with arbitrary shape. The result of the oxidation will be an embedded nanostructure comprising the semiconductor having slower diffusing atom species surrounded by the semiconductor having the higher diffusing atom species. The method enables the fabrication of low- and multi-dimensional quantum-scale embedded nanostructures, such as quantum dots (QDs), toroids, and ellipsoids.

A wafer for fabricating a unit pixel is provided. The wafer includes a transparent substrate, and a light blocking layer disposed on the transparent substrate. The light blocking layer includes a plurality of unit pixel regions and at least one observation region. Each of the unit pixel regions has a mounting region for mounting a light emitting device, and the observation region includes the mounting region for mounting the light emitting device and an auxiliary pattern disposed around the mounting region.

Waveguides and electromagnetic cavities fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. Devices comprising electromagnetic cavities fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. Devices comprising waveguides fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. The devices include electromagnetic splitters, filters, and sensors.

A light emitting device includes an LED chip, a light-transmissible member and a light-reflecting member. The LED chip has a plurality of interconnecting side surfaces having a roughened structure and a plurality of corners. The light-transmissible member covers the side surfaces and the corners and includes a light-transmissible material layer having a breadth value W(A) of a viscosity coefficient (A) range of the light-transmissible material, which satisfies a relation of W(A)∝B*D/C: where B represents a thickness of the light-transmissible material layer, represents a thickness of the LED chip measured from the first surface to the second surface, and D represents a roughness of the roughened structure. A method for manufacturing the light emitting device is also provided.

A light-emitting device includes a substrate that is at least partially transparent to optical radiation and has a first index of refraction. A diode region is disposed on a first surface of the substrate and is configured to emit light responsive to a voltage applied thereto. An encapsulation layer may be disposed on a second surface of the substrate and has a second index of refraction. An antireflective layer stack is formed within the substrate directly below the second surface of the substrate. The antireflective layer has an amorphous non-porous first layer, a porous second layer, an optional amorphous non porous third layer, and a fourth layer with modified crystallinity. The encapsulation layer may also be omitted and the substrate's second surface may separate the substrate, which has an antireflective layer stack within the substrate, directly below the second substrate surface, from air.

A flip-chip light emitting device includes a transparent substrate, an epitaxial light-emitting structure, a transparent bonding layer interposed between the transparent substrate and the light-emitting structure, and a protective insulating layer disposed over the light-emitting structure and the bonding layer. The transparent bonding layer has a smaller-thickness section that has a first contact surface for the protective insulating layer to be disposed thereover, and a larger-thickness section that has a second contact surface meshing with and bonded to a roughened bottom surface of the light-emitting structure. The first contact surface is smaller in roughness than the second contact surface. A method for producing the device is also disclosed.