A semiconductor structure comprises a layer of a first III-nitride material having a first lattice dimension; a non-porous layer of a second III-nitride material having a second lattice dimension different from the first lattice dimension; and a porous region of III-nitride material disposed between the layer of first III-nitride material and the non-porous layer of the second III-nitride material. An optoelectronic semiconductor device, an LED, and a method of manufacturing a semiconductor structure are also provided.

In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.

A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.

A light emitting device includes: a plurality of light emitting stacked layers, including a first surface and a second surface, wherein the second surface is electrically opposite to the first surface; a mesa structure; a current blocking layer disposed on the first surface, including a sidewall; and a transparent conductive layer disposed on the first surface; and a first pad electrode, disposed on the transparent conductive layer and on the first surface; wherein a retract distance of the transparent conductive layer with respect to an edge of the mesa structure is less than 3 μm; and wherein a retract distance of the transparent conductive layer with respect to an edge of the sidewall of the current blocking layer is less than 3 μm.

An epitaxial wafer of a light-emitting chip, a method for manufacturing an epitaxial wafer, and a light-emitting chip are provided. A light-emitting layer (5) of an active region of the epitaxial wafer of the light-emitting chip includes at least one superlattice (51), and each superlattice includes: a quantum well sub-layer (511) and a stress conversion sub-layer (512) which is formed on the quantum well sub-layer (511) and enables the quantum well sub-layer (511) to be converted from compressive strain to tensile strain, and the stress conversion sub-layer (512) and the quantum well sub-layer (511) form a two-dimensional electron gas.

Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

A method is provided for forming Group IIIA-nitride layers, such as GaN, on substrates. The Group IIIA-nitride layers may be deposited on mesa-patterned semiconductor-on-insulator (SOI, e.g., silicon-on-insulator) substrates. The Group IIIA-nitride layers may be deposited by heteroepitaxial deposition on mesa-patterned semiconductor-on-insulator (SOI, e.g., silicon-on-insulator) substrates.

A nitride-based semiconductor light-emitting element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type different from the first conductivity type; a carrier blocking layer of the second conductivity type, provided on a surface of the second semiconductor layer closer to the first semiconductor layer; and a light-emitting layer region having a light-emitting layer, provided between the first semiconductor layer and the carrier blocking layer. A predetermined specific region is provided in the carrier blocking layer and extending from an interface between the carrier blocking layer and the light-emitting layer region and wherein a maximum value of a concentration of an impurity of the second conductivity type in the predetermined specific region is higher than 5×10.sup.19 cm.sup.−3.

A vertical light-emitting diode device and a method of fabricating the same are provided. The device may include a conductive substrate serving as a p electrode, a p-type GaN layer provided on the conductive substrate, an active layer provided on the p-type GaN layer, an n-type GaN layer provided on the active layer, an n electrode pattern provided on the n-type GaN layer, a metal oxide structure filling a plurality of holes formed in the n-type GaN layer, and a seed layer provided on bottom surfaces of the holes and used to as a seed in a crystal growth process of the metal oxide structure.

A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.