A nanostructured hybrid particle, a manufacturing method thereof, and a device including the nanostructured hybrid particle are disclosed. The nanostructured hybrid particle includes a hydrophobic base particle having a convex-concave nanopattern on a surface thereof; a hydrophobic light-emitting nanoparticle disposed in a concave portion of the convex-concave nanopattern on the surface of hydrophobic base particle; and a coating layer covering the hydrophobic base particle and the hydrophobic light-emitting nanoparticle. In the nanostructured hybrid particle, light extraction may occur in all 3-dimensional directions, and thus, the nanostructured hybrid particle can exhibit high light extraction efficiency compared to light extraction occurring on a two-dimensional plane.

Plasmonic graphene is fabricated using thermally assisted self-assembly of plasmonic nanostructure on graphene. Silver nanostructures were deposited on graphene as an example.

Methods, systems, and apparatuses are described for a CMOS compatible substrate having multiple stacks of semiconductor layers. The multiple stacks, at least, each include i) a layer of a tellurium based semiconductor layer on top of ii) a porous silicon layer. The porous silicon layer is a compliant layer to accept structural defects from the tellurium based semiconductor layer into the porous silicon layer. The multiple stacks are grown on the CMOS compatible substrate.

A quantum dot ink, a method of manufacturing a display panel, and the display panel are provided. The quantum dot ink includes an organic solvent and quantum dots dispersed in the organic solvent. The quantum dots include luminescent quantum dots and blocking quantum dots. Dispersion effect of the quantum dot ink during inkjet printing is inhibited by adding the blocking quantum dots into the quantum do ink. This can prevent a coffee ring effect, and enhance smoothness and uniformity of a quantum dot film surface, thereby allowing the display panel to exhibit excellent display quality.

Methods, systems, and apparatuses are described for a CMOS compatible substrate having multiple stacks of semiconductor layers. The multiple stacks, at least, each include i) a layer of a tellurium based semiconductor layer on top of ii) a porous silicon layer. The porous silicon layer is a compliant layer to accept structural defects from the tellurium based semiconductor layer into the porous silicon layer. The multiple stacks are grown on the CMOS compatible substrate.

An optoelectronic device is manufactured by an epitaxial growth, on each first layer of many first layers spaced apart from each other on a first support, wherein the first is made of a first semiconductor material, of a second layer made of a second semiconductor material. A further epitaxial growth is made on each second layer of a stack of semiconductor layers. Each stack includes a third layer made of a third semiconductor material in physical contact with the second layer. Each stack is then separated from the first layer by removing the second layer using an etching that is selective simultaneously over both the first and third semiconductor materials. Each stack is then transferred onto a second support. Each of the first and third semiconductor materials is one of a III-V compound or a II-VI compound.

An InGaN-based LED epitaxial wafer and a fabrication method thereof are disclosed, wherein the InGaN-based LED epitaxial wafer includes: a substrate; an InGaN layer, formed on a surface of the substrate, having an In content between 40% and 90%, so as to ensure that the LED epitaxial wafer is capable of emitting long-wavelength light or near-infrared rays; a p-type metal oxide layer, formed on a surface of the InGaN layer facing away from the substrate, acting as a hole injection layer for the InGaN layer.

Provided are a method for manufacturing a single-crystal semiconductor layer. The method of manufacturing the single crystalline semiconductor layer includes performing a unit cycle multiple times, wherein the unit cycle includes a metal precursor pressurized dosing operation in which a metal precursor is adsorbed on a surface of a single crystalline substrate by supplying the metal precursor onto the single crystalline substrate while an outlet of a chamber in which the single crystalline substrate is loaded is closed such that a reaction pressure in the chamber is increased; a metal precursor purge operation; a reactive gas supplying operation in which a reactive gas is supplied into the chamber to cause a reaction of the reactive gas with the metal precursor adsorbed on the single crystalline substrate after the metal precursor purge operation; and a reactive gas purge operation.

The present invention provides a film formation method and a film formation apparatus which can fabricate an epitaxial film with +c polarity by a sputtering method. In one embodiment of the present invention, the film formation method of epitaxially growing a semiconductor thin film with a wurtzite structure by the sputtering method on an epitaxial growth substrate heated to a predetermined temperature by a heater includes the following steps. First, the substrate is disposed on a substrate holding portion including the heater to be located at a predetermined distance away from the heater. Then, the epitaxial film of the semiconductor film with the wurtzite structure is formed on the substrate with the impedance of the substrate holding portion being adjusted.

Compositions, thin films, devices, and methods involving doped oxide semiconductor materials are described. Indium gallium doped zinc oxide (IGZO) with advantageous properties that may be useful as a transparent conductive oxide (TCO) is described. Methods of digital doping to create doped oxide semiconductor materials are described.