A balanced-type strip-shaped dielectric substrate integrated filter includes: a high-k dielectric substrate; and first low-k dielectric substrates, second low-k dielectric substrates and metal grounds are symmetrically stacked on upper and lower surfaces of the high-k dielectric substrate. Compared with an existing balanced-type dielectric filter, a high Q-value strip-shaped dielectric substrate integrated resonator with a packageable characteristic which works in TM.sub.111 mode and employs strip-shaped dielectric blocks with double grooves, combined with air groove structures of upper and lower layers and a packaging substrate is proposed, so that problems that cost is high and self-packaging cannot be realized of the existing balanced-type dielectric filter when being implemented by combining ceramic dielectric with a metal chamber structure can be solved, and thereby a balanced-type strip-shaped dielectric substrate integrated filter with the characteristic of low loss is realized; and meanwhile the filter may have advantages of self-packaging, high integration level and low cost.

The present disclosure provides a cavity filter assembly installed with an RF filter having an empty area formed between the RF filter and a cavity filter body serving as a ground to reduce the parasitic capacitance by forming the cavity filter body with a first pocket portion configured to install the RF filter and a second pocket portion within the first pocket portion in a position to overlap a transmission line, thereby reducing the insertion loss of the RF filter, which when serving as a low-pass filter, can position the harmonics in the stopband further away from the cutoff frequency and thus effect improved frequency characteristics of the low-pass filter through improvements of, for example, the frequency characteristics in the stopband.

A filter antenna device is provided, which including a SIW filter structure, a SIW radiation structure cascaded with the SIW filter structure, a feeding port and a first coplanar waveguide that are provided on a side of the first resonant cavity facing away from the back cavity, a second coplanar waveguide provided on a side of the second resonant cavity close to the back cavity, a transmission wire provided in the back cavity and connected to one end of the second coplanar waveguide, and a probe connecting the transmission wire with the metal patch. The SIW filter structure includes a first resonant cavity and a second resonant cavity that are stacked from top to bottom and communicate with each other.

The present disclosure provides a cavity filter assembly installed with an RF filter having an empty area formed between the RF filter and a cavity filter body serving as a ground to reduce the parasitic capacitance by forming the cavity filter body with a first pocket portion configured to install the RF filter and a second pocket portion within the first pocket portion in a position to overlap a transmission line, thereby reducing the insertion loss of the RF filter, which when serving as a low-pass filter, can position the harmonics in the stopband further away from the cutoff frequency and thus effect improved frequency characteristics of the low-pass filter through improvements of, for example, the frequency characteristics in the stopband.

A filter antenna device is provided, which including a SIW filter structure, a SIW radiation structure cascaded with the SIW filter structure, a feeding port and a first coplanar waveguide that are provided on a side of the first resonant cavity facing away from the back cavity, a second coplanar waveguide provided on a side of the second resonant cavity close to the back cavity, a transmission wire provided in the back cavity and connected to one end of the second coplanar waveguide, and a probe connecting the transmission wire with the metal patch. The SIW filter structure includes a first resonant cavity and a second resonant cavity that are stacked from top to bottom and communicate with each other.

An embodiment of an artificial dielectric resonator that can enhance a relative dielectric constant in a basic mode is provided. The artificial dielectric resonator has a first group of a series of metal strips including a plurality of metal strips each in a thin sheet shape arranged with microscopic gaps provided in a longitudinal direction, and a second group of a series of metal strips including a plurality of metal strips each in a thin sheet shape arranged with gaps provided in a longitudinal direction, the first group of a series of metal strips and the second group of a series of metal strips are disposed close to each other in a thickness direction of the metal strips, and the metal strip of one metal strip group is disposed to face oppositely disposed gaps and cross vertically adjacent gaps of the other metal strip group.

An artificial dielectric resonator that can enhance a relative dielectric constant in a basic mode is provided. The artificial dielectric resonator 1 has a first series metal strip group 2 including a plurality of metal strips 20 each in a thin sheet shape arranged with microscopic gaps 20G provided in a longitudinal direction, and a second series metal strip group 3 including a plurality of metal strips 30 each in a thin sheet shape arranged with microscopic gaps 30G provided in a longitudinal direction, the first series metal strip group 2 and the second series metal strip group 3 are disposed close to each other in a thickness direction of the metal strips 20 and 30, and the metal strip 20 or 30 of one metal strip group 2 or 3 is disposed to face and cross gap 30G or 20G of the other metal strip group 3 or 2.

An artificial dielectric resonator that can enhance a relative dielectric constant in a basic mode is provided. The artificial dielectric resonator 1 has a first series metal strip group 2 including a plurality of metal strips 20 each in a thin sheet shape arranged with microscopic gaps 20G provided in a longitudinal direction, and a second series metal strip group 3 including a plurality of metal strips 30 each in a thin sheet shape arranged with microscopic gaps 30G provided in a longitudinal direction, the first series metal strip group 2 and the second series metal strip group 3 are disposed close to each other in a thickness direction of the metal strips 20 and 30, and the metal strip 20 or 30 of one metal strip group 2 or 3 is disposed to face and cross gap 30G or 20G of the other metal strip group 3 or 2.