A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a first resonator and a second resonator, the first and second resonators having parallel resonator directions along a longitudinal direction and being monolithically integrated into the semiconductor laser diode, wherein the first resonator includes at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped to generate a first light, wherein the longitudinal direction is parallel to a main extension plane of the active layer, and wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to produce a second light which is partially emitted outwards from the second resonator.

A laser source includes a topological cavity for nonreciprocal lasing, a magnetic material and an optical waveguide. The magnetic material is arranged to interact with the topological cavity. The optical waveguide is arranged to receive light extracted from the topological cavity upon breaking of time-reversal symmetry in the topological cavity.

A dielectric-grating waveguide free-electron laser device generating coherent or laser-like radiation is provided. An electron beam propagates next to a dielectric waveguide with a built-in grating structure to generate highly confined coherent or laser-like radiation in the waveguide through the Bragg resonance, the backward-wave resonance, or the Fabry-Perot resonance provided by the grating-waveguide structure. The dielectric-grating waveguide can be made of linear optical materials or nonlinear optical materials or combination of linear and nonlinear optical materials to enable versatile functionalities, such as laser generation, laser-wavelength conversion, and laser signal processing. Owing to the build-up of the laser modes inside the dielectric waveguide, coherent or laser-like Smith-Purcell radiation is also generated above the grating via coupling and bunching of the electrons with the surface mode fields.

Core-cladding planar waveguide (PWG) structures and methods of making and using same. The core-cladding PWG structures can be synthesized by hydride vapor phase epitaxy and processed by mechanical and chemical-mechanical polishing. An Er doping concentration of [Er] between 1×10.sup.18 atoms/cm.sup.3 and 1×10.sup.22 atoms/cm.sup.3 can be in the core layer. Such PWGs have a core region that can achieve optical confinement between 96% and 99% and above.

A system, device, and method for laser cooling rare earth doped silica glass using anti-Stokes fluorescence is disclosed. The system includes a rare earth doped and codoped with one or more codopants silica glass; a laser that provides radiation to a first surface and through a body of the rare earth doped silica glass, wherein the laser is tuned from a first wavelength to a second wavelength; and a thermally sensitive device that captures images of the rare earth doped silica glass as the laser is tuned and determines a third wavelength between the first wavelength and the second wavelength where the rare earth doped silica glass is maximumly or near maximumly cooled.

A ring optical resonator and one or more input optical waveguides are arranged on a substrate, and are arranged and positioned to establish evanescent optical coupling between them. The ring optical resonator, the substrate, or both include one or more nonlinear optical materials. To detect an electromagnetic signal at frequency ν.sub.EM incident on the resonator, an input optical signal at frequency ν.sub.IN propagates along the waveguide and around the resonator. The incident electromagnetic signal and the input optical signal generate one or more sideband optical signals at corresponding optical sideband frequencies ν.sub.SF=ν.sub.IN+ν.sub.EM or ν.sub.DF=ν.sub.IN−ν.sub.EM. To generate an electromagnetic signal to propagate away from the resonator, input optical signals at frequencies ν.sub.IN1 and ν.sub.IN2 propagate along one or more waveguides and around the resonator and generate the electromagnetic signal incident at frequency ν.sub.EM=|ν.sub.IN1−ν.sub.IN2|.

A single-mode micro-laser based on a single whispering gallery mode optical microcavity and a preparation method thereof described includes: preparing a desired single whispering gallery mode optical microcavity doped with rare earth ions or containing a gain material such as quantum dots, wherein an optical microcavity configuration include a micro-disk cavity, a ring-shaped microcavity, and a racetrack-shaped microcavity; a material type include lithium niobate, silicon dioxide, silicon nitride, etc.; preparing an optical fiber cone or an optical waveguide of a required size which can excite high-order modes of the optical microcavity, such as a ridge waveguide and a circular waveguides; and coupling, integrating, and packaging the optical fiber cone or the optical waveguide with the microcavity. A pump light is coupled to the optical fiber cone or the optical waveguide to excite a compound mode with a polygonal configuration.

Chip technology for fabricating ultra-low-noise, high-stability optical devices for use in an optical atomic clock system. The proposed chip technology uses diamond material to form stabilized lasers, frequency references, and passive laser cavity structures. By utilizing the exceptional thermal conductivity of diamond and other optical and dielectric properties, a specific temperature range of operation is proposed that allows significant reduction of the total energy required to generate and maintain an ultra-stable laser. In each configuration, the diamond-based chip is cooled by a cryogenic cooler containing liquid nitrogen.

An optically pumped on-chip solid-state laser includes a solid gain media substrate and a laser generating structure disposed above the solid gain media substrate. The laser generating structure includes a resonator, a pump light input structure, and a laser light output structure; and the resonator is disposed between the pump light input structure and the laser light output structure, and is propped against or is in clearance fit with the solid gain media substrate.

Hybrid silicon devices are disclosed in which a silicon-based resonant structure is coated with a rare-earth-doped tellurium oxide layer that facilitates optical gain, thereby forming a silicon-based laser cavity. The silicon-based laser cavity supports at least one resonant mode that has a modal volume extending from the silicon resonant base structure into the rare-earth-doped tellurium oxide layer. The silicon-based laser cavity is optically coupled to a silicon waveguide to facilitate the delivery of pump laser energy to the silicon-based laser cavity, such that at least a portion of the pump laser energy propagating through the silicon waveguide is coupled to the silicon-based laser cavity for excitation of the rare earth dopant within the rare-earth-doped tellurium oxide layer. The silicon waveguide that is optically coupled to the silicon-based laser cavity also facilitates the external delivery of the laser energy generated within silicon-based laser cavity.